DE3670927D1 - Bildaufnahmeanordnungen mit photovoltaischen detektorelementen. - Google Patents

Bildaufnahmeanordnungen mit photovoltaischen detektorelementen.

Info

Publication number
DE3670927D1
DE3670927D1 DE8686201611T DE3670927T DE3670927D1 DE 3670927 D1 DE3670927 D1 DE 3670927D1 DE 8686201611 T DE8686201611 T DE 8686201611T DE 3670927 T DE3670927 T DE 3670927T DE 3670927 D1 DE3670927 D1 DE 3670927D1
Authority
DE
Germany
Prior art keywords
detector elements
photovoltaic detector
image arrangements
arrangements
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686201611T
Other languages
English (en)
Inventor
Ian Martin C O Mullard S Baker
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leonardo UK Ltd
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Application granted granted Critical
Publication of DE3670927D1 publication Critical patent/DE3670927D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14649—Infrared imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE8686201611T 1985-09-20 1986-09-17 Bildaufnahmeanordnungen mit photovoltaischen detektorelementen. Expired - Lifetime DE3670927D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8523428 1985-09-20

Publications (1)

Publication Number Publication Date
DE3670927D1 true DE3670927D1 (de) 1990-06-07

Family

ID=10585586

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686201611T Expired - Lifetime DE3670927D1 (de) 1985-09-20 1986-09-17 Bildaufnahmeanordnungen mit photovoltaischen detektorelementen.

Country Status (7)

Country Link
US (1) US4833515A (de)
EP (1) EP0216426B1 (de)
JP (1) JPH06101815B2 (de)
CA (1) CA1271838A (de)
DE (1) DE3670927D1 (de)
GB (1) GB2181012B (de)
IL (1) IL80061A (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3715674A1 (de) * 1987-05-11 1988-12-01 Messerschmitt Boelkow Blohm Halbleiter mit kapazitiver auslese der ladungstraeger und integrierter gleichspannungszufuehrung
EP0308169B1 (de) * 1987-09-14 1994-12-28 Fujitsu Limited Ladungsinjektionsschaltung
JP2642750B2 (ja) * 1988-10-20 1997-08-20 キヤノン株式会社 半導体装置及びそれを搭載した信号処理装置
US4988637A (en) * 1990-06-29 1991-01-29 International Business Machines Corp. Method for fabricating a mesa transistor-trench capacitor memory cell structure
US6683646B2 (en) * 1997-11-24 2004-01-27 Xerox Corporation CMOS image sensor array having charge spillover protection for photodiodes
US7581852B2 (en) * 1999-11-15 2009-09-01 Xenonics, Inc. Portable device for viewing and imaging
KR100635457B1 (ko) 2004-06-16 2006-10-18 학교법인 서강대학교 나노호스트 내부에 광전류 유발소자를 내포시킨나노호스트-광전류 유발소자 복합체를 포함하는 태양전지
FR2888074B1 (fr) * 2005-07-01 2008-01-25 Commissariat Energie Atomique Dispositif microelectronique capteur d'image a convertisseur analogique/numerique asynchrone
FR2937210B1 (fr) * 2008-10-15 2010-11-05 Fr De Detecteurs Infrarouges S Dispositif pour la lecture de charges electriques notamment creees par un photodetecteur et photodetecteur comprenant de tels dispositifs

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1106477A (en) * 1972-07-10 1981-08-04 Carlo H. Sequin Overflow channel for charge transfer imaging devices
US3896474A (en) * 1973-09-10 1975-07-22 Fairchild Camera Instr Co Charge coupled area imaging device with column anti-blooming control
GB2095905B (en) * 1981-03-27 1985-01-16 Philips Electronic Associated Infra-red radiation imaging devices and methods for their manufacture
FR2504334B1 (fr) * 1981-04-16 1985-10-18 Thomson Csf Dispositif d'analyse d'image en lignes successives, utilisant le transfert de charges electriques, composant une memoire de ligne, et camera de television comportant un tel dispositif
FR2549328B1 (fr) * 1983-06-14 1985-11-08 Thomson Csf Dispositif photosensible a l'etat solide
FR2558670B1 (fr) * 1984-01-20 1986-11-21 Thomson Csf Perfectionnement aux dispositifs photosensibles a l'etat solide

Also Published As

Publication number Publication date
GB2181012B (en) 1989-09-13
GB2181012A (en) 1987-04-08
GB8621838D0 (en) 1986-10-15
EP0216426B1 (de) 1990-05-02
JPS6272282A (ja) 1987-04-02
EP0216426A1 (de) 1987-04-01
JPH06101815B2 (ja) 1994-12-12
IL80061A (en) 1990-08-31
CA1271838C (en) 1990-07-17
US4833515A (en) 1989-05-23
CA1271838A (en) 1990-07-17

Similar Documents

Publication Publication Date Title
DE3671990D1 (de) Photoleitfaehige abbildungselemente.
DE3585688D1 (de) Bildaufnahme mit halbleiter.
DE3687358D1 (de) Bildpufferspeicher mit variablem zugriff.
DE3768112D1 (de) Strahlungsdetektor.
DE3677045D1 (de) P-i-n-photodiode mit niedrigem leckstrom.
DE3688967D1 (de) Solargenerator.
NO863995L (no) Gjennomsiktig gjenstand.
FI862754A (fi) Orienterad film med syrespaerr.
DE3862305D1 (de) Sonnenstrahlungsmesser.
DE68924600D1 (de) Verbesserte sonnenkollektoren.
DE3685536D1 (de) Entscheidungsrueckgekoppelter entzerrer mit musterdetektor.
DE3686131D1 (de) Faltblattanordnung.
DE3765770D1 (de) Radiographisches element mit reduziertem zwischenbildeffekt.
DE3676414D1 (de) Siebeinrichtung mit staeben.
DE3689839D1 (de) Verschiebungsdetektor.
DE3669015D1 (de) Bestrahlungseinrichtung.
DE3674872D1 (de) Synchrondetektor.
FI862717A0 (fi) Foerbaettrat kollagenkorvskal.
DE3785583D1 (de) Stromdetektor.
DE3670927D1 (de) Bildaufnahmeanordnungen mit photovoltaischen detektorelementen.
DE3670702D1 (de) Vorlagendetektor.
DE3778044D1 (de) Kassettenladegeraet mit seitenplatten.
DE3671327D1 (de) Bildaufnahmeanordnungen mit photovoltaischen detektorelementen.
DE3684292D1 (de) Waermebildkamera mit parallelabtastung.
DE3669389D1 (de) Sonnenkollektor.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: GEC-MARCONI LTD., STANMORE, GB

8328 Change in the person/name/address of the agent

Free format text: MANITZ, G., DIPL.-PHYS. DR.RER.NAT. FINSTERWALD, M., DIPL.-ING. DIPL.-WIRTSCH.-ING., 80538 MUENCHEN ROTERMUND, H., DIPL.-PHYS., 70372 STUTTGART HEYN, H., DIPL.-CHEM. DR.RER.NAT., PAT.-ANWAELTE, 80538 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: BAE SYSTEMS ELECTRONICS LTD., FARNBOROUGH, HAMPSHI

8327 Change in the person/name/address of the patent owner

Owner name: SELEX SENSORS AND AIRBORNE SYSTEMS LTD., BASILDON,