FR2941329B1 - Detecteur bispectral. - Google Patents

Detecteur bispectral.

Info

Publication number
FR2941329B1
FR2941329B1 FR0950300A FR0950300A FR2941329B1 FR 2941329 B1 FR2941329 B1 FR 2941329B1 FR 0950300 A FR0950300 A FR 0950300A FR 0950300 A FR0950300 A FR 0950300A FR 2941329 B1 FR2941329 B1 FR 2941329B1
Authority
FR
France
Prior art keywords
bispectral detector
bispectral
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0950300A
Other languages
English (en)
Other versions
FR2941329A1 (fr
Inventor
Arnaud Crastes
Patrick Robert
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ulis SAS
Original Assignee
Ulis SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ulis SAS filed Critical Ulis SAS
Priority to FR0950300A priority Critical patent/FR2941329B1/fr
Publication of FR2941329A1 publication Critical patent/FR2941329A1/fr
Application granted granted Critical
Publication of FR2941329B1 publication Critical patent/FR2941329B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00Details of television systems
    • H04N5/30Transforming light or analogous information into electric information
    • H04N5/33Transforming infrared radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J3/00Spectrometry; Spectrophotometry; Monochromators; Measuring colours
    • G01J3/28Investigating the spectrum
    • G01J3/30Measuring the intensity of spectral lines directly on the spectrum itself
    • G01J3/36Investigating two or more bands of a spectrum by separate detectors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22Electrical features thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14645Colour imagers
    • H01L27/14647Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14649Infrared imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14649Infrared imagers
    • H01L27/14652Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
FR0950300A 2009-01-19 2009-01-19 Detecteur bispectral. Active FR2941329B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0950300A FR2941329B1 (fr) 2009-01-19 2009-01-19 Detecteur bispectral.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0950300A FR2941329B1 (fr) 2009-01-19 2009-01-19 Detecteur bispectral.

Publications (2)

Publication Number Publication Date
FR2941329A1 FR2941329A1 (fr) 2010-07-23
FR2941329B1 true FR2941329B1 (fr) 2011-03-04

Family

ID=40931481

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0950300A Active FR2941329B1 (fr) 2009-01-19 2009-01-19 Detecteur bispectral.

Country Status (1)

Country Link
FR (1) FR2941329B1 (fr)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60130274A (ja) * 1983-12-19 1985-07-11 Toshiba Corp 固体撮像装置
US5811815A (en) * 1995-11-15 1998-09-22 Lockheed-Martin Ir Imaging Systems, Inc. Dual-band multi-level microbridge detector
US5808350A (en) * 1997-01-03 1998-09-15 Raytheon Company Integrated IR, visible and NIR sensor and methods of fabricating same
US6107618A (en) * 1997-07-14 2000-08-22 California Institute Of Technology Integrated infrared and visible image sensors
US6097031A (en) * 1997-07-25 2000-08-01 Honeywell Inc. Dual bandwith bolometer
FR2781927B1 (fr) * 1998-07-28 2001-10-05 Commissariat Energie Atomique Dispositif de detection de rayonnements multispectraux infrarouge/visible
US7075079B2 (en) * 2001-06-27 2006-07-11 Wood Roland A Sensor for dual wavelength bands
US7462831B2 (en) * 2006-01-26 2008-12-09 L-3 Communications Corporation Systems and methods for bonding

Also Published As

Publication number Publication date
FR2941329A1 (fr) 2010-07-23

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