DE3381366D1 - Halbleiteranordnung mit einer mehrschichtstruktur. - Google Patents

Halbleiteranordnung mit einer mehrschichtstruktur.

Info

Publication number
DE3381366D1
DE3381366D1 DE8383108445T DE3381366T DE3381366D1 DE 3381366 D1 DE3381366 D1 DE 3381366D1 DE 8383108445 T DE8383108445 T DE 8383108445T DE 3381366 T DE3381366 T DE 3381366T DE 3381366 D1 DE3381366 D1 DE 3381366D1
Authority
DE
Germany
Prior art keywords
multilayer structure
semiconductor arrangement
semiconductor
arrangement
multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8383108445T
Other languages
English (en)
Inventor
Thoru Nakamura
Shojiro Sugaki
Masahiko Ogirima
Kazuo Nakazato
Takao Miyazaki
Naoki Yamamoto
Minoru Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3381366D1 publication Critical patent/DE3381366D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
DE8383108445T 1982-08-30 1983-08-26 Halbleiteranordnung mit einer mehrschichtstruktur. Expired - Lifetime DE3381366D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57149227A JPS5940571A (ja) 1982-08-30 1982-08-30 半導体装置

Publications (1)

Publication Number Publication Date
DE3381366D1 true DE3381366D1 (de) 1990-04-26

Family

ID=15470640

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383108445T Expired - Lifetime DE3381366D1 (de) 1982-08-30 1983-08-26 Halbleiteranordnung mit einer mehrschichtstruktur.

Country Status (5)

Country Link
EP (1) EP0102075B1 (de)
JP (1) JPS5940571A (de)
KR (1) KR900008149B1 (de)
CA (1) CA1205577A (de)
DE (1) DE3381366D1 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6170757A (ja) * 1984-09-14 1986-04-11 Hitachi Ltd 半導体装置及びその製造方法
JPS61164262A (ja) * 1985-01-17 1986-07-24 Toshiba Corp 半導体装置
JPS61166071A (ja) * 1985-01-17 1986-07-26 Toshiba Corp 半導体装置及びその製造方法
US5397912A (en) * 1991-12-02 1995-03-14 Motorola, Inc. Lateral bipolar transistor
US6140694A (en) * 1998-12-30 2000-10-31 Philips Electronics North America Corporation Field isolated integrated injection logic gate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4338138A (en) * 1980-03-03 1982-07-06 International Business Machines Corporation Process for fabricating a bipolar transistor
US4259680A (en) * 1980-04-17 1981-03-31 Bell Telephone Laboratories, Incorporated High speed lateral bipolar transistor
US4339767A (en) * 1980-05-05 1982-07-13 International Business Machines Corporation High performance PNP and NPN transistor structure
US4403394A (en) * 1980-12-17 1983-09-13 International Business Machines Corporation Formation of bit lines for ram device
JPS5873156A (ja) * 1981-10-28 1983-05-02 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
EP0102075A2 (de) 1984-03-07
JPS5940571A (ja) 1984-03-06
KR900008149B1 (ko) 1990-11-03
KR840005930A (ko) 1984-11-19
EP0102075A3 (en) 1986-02-05
EP0102075B1 (de) 1990-03-21
CA1205577A (en) 1986-06-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee