DE3484880D1 - Verfahren zur herstellung von rueckseitenplatten fuer flache anzeigen von anzeigetransistoren, sowie nach diesem verfahren hergestellte anzeigen. - Google Patents

Verfahren zur herstellung von rueckseitenplatten fuer flache anzeigen von anzeigetransistoren, sowie nach diesem verfahren hergestellte anzeigen.

Info

Publication number
DE3484880D1
DE3484880D1 DE8484105383T DE3484880T DE3484880D1 DE 3484880 D1 DE3484880 D1 DE 3484880D1 DE 8484105383 T DE8484105383 T DE 8484105383T DE 3484880 T DE3484880 T DE 3484880T DE 3484880 D1 DE3484880 D1 DE 3484880D1
Authority
DE
Germany
Prior art keywords
displays
transistors
gate
rear side
side panels
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8484105383T
Other languages
English (en)
Inventor
Scott H Holmberg
Richard A Flasck
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
ALPHASIL Inc
Original Assignee
Honeywell Inc
ALPHASIL Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc, ALPHASIL Inc filed Critical Honeywell Inc
Application granted granted Critical
Publication of DE3484880D1 publication Critical patent/DE3484880D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136259—Repairing; Defects
    • G02F1/136268—Switch defects
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Residential Or Office Buildings (AREA)
DE8484105383T 1983-05-11 1984-05-11 Verfahren zur herstellung von rueckseitenplatten fuer flache anzeigen von anzeigetransistoren, sowie nach diesem verfahren hergestellte anzeigen. Expired - Fee Related DE3484880D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/493,523 US4736229A (en) 1983-05-11 1983-05-11 Method of manufacturing flat panel backplanes, display transistors and displays made thereby

Publications (1)

Publication Number Publication Date
DE3484880D1 true DE3484880D1 (de) 1991-09-12

Family

ID=23960590

Family Applications (2)

Application Number Title Priority Date Filing Date
DE8484105383T Expired - Fee Related DE3484880D1 (de) 1983-05-11 1984-05-11 Verfahren zur herstellung von rueckseitenplatten fuer flache anzeigen von anzeigetransistoren, sowie nach diesem verfahren hergestellte anzeigen.
DE3486325T Expired - Fee Related DE3486325T2 (de) 1983-05-11 1984-05-11 Verfahren zur Herstellung von Rückwänden für Flachbildschirme.

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE3486325T Expired - Fee Related DE3486325T2 (de) 1983-05-11 1984-05-11 Verfahren zur Herstellung von Rückwänden für Flachbildschirme.

Country Status (4)

Country Link
US (1) US4736229A (de)
EP (2) EP0411726B1 (de)
AT (2) ATE66095T1 (de)
DE (2) DE3484880D1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5123847A (en) * 1983-05-11 1992-06-23 Holmberg Scott H Method of manufacturing flat panel backplanes, display transistors
US4855806A (en) * 1985-08-02 1989-08-08 General Electric Company Thin film transistor with aluminum contacts and nonaluminum metallization
US4646424A (en) * 1985-08-02 1987-03-03 General Electric Company Deposition and hardening of titanium gate electrode material for use in inverted thin film field effect transistors
EP0211402B1 (de) * 1985-08-02 1991-05-08 General Electric Company Verfahren und Struktur für dünnfilmtransistorgesteuerte Flüssigkristallmatrixanordnungen
US4933296A (en) * 1985-08-02 1990-06-12 General Electric Company N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays
JPS6280626A (ja) * 1985-10-04 1987-04-14 Hosiden Electronics Co Ltd 液晶表示素子
DE3640174A1 (de) * 1985-11-27 1987-06-04 Sharp Kk Duennfilm-transistor-anordnung
JPS62229873A (ja) * 1986-03-29 1987-10-08 Hitachi Ltd 薄膜半導体装置の製造方法
JPS62162857U (de) * 1986-04-02 1987-10-16
FR2605132B1 (fr) * 1986-10-14 1988-12-09 Thomson Csf Ecran de visualisation electrooptique a transistors de commande et procede de realisation
JPS63265223A (ja) * 1987-04-23 1988-11-01 Alps Electric Co Ltd 薄膜トランジスタアレイおよびその製法
JPH0690372B2 (ja) * 1987-08-26 1994-11-14 シャープ株式会社 液晶表示素子
US4778258A (en) * 1987-10-05 1988-10-18 General Electric Company Protective tab structure for use in the fabrication of matrix addressed thin film transistor liquid crystal displays
JP2771820B2 (ja) * 1988-07-08 1998-07-02 株式会社日立製作所 アクティブマトリクスパネル及びその製造方法
JP2650730B2 (ja) * 1988-08-08 1997-09-03 シャープ株式会社 炭化珪素半導体を用いたｐｎ接合型発光ダイオード
US4961630A (en) * 1989-03-15 1990-10-09 Ovonic Imaging Systems, Inc. Liquid crystal display with auxiliary pixel capacitance interconnected through substrate
JPH0734467B2 (ja) * 1989-11-16 1995-04-12 富士ゼロックス株式会社 イメージセンサ製造方法
US5017989A (en) * 1989-12-06 1991-05-21 Xerox Corporation Solid state radiation sensor array panel
US5058995A (en) * 1990-03-15 1991-10-22 Thomson Consumer Electronics, Inc. Pixel electrode structure for liquid crystal display devices
US5200847A (en) * 1990-05-01 1993-04-06 Casio Computer Co., Ltd. Liquid crystal display device having driving circuit forming on a heat-resistant sub-substrate
US5198694A (en) * 1990-10-05 1993-03-30 General Electric Company Thin film transistor structure with improved source/drain contacts
US5559399A (en) * 1992-06-11 1996-09-24 Norden Systems, Inc. Low resistance, thermally stable electrode structure for electroluminescent displays
US6069443A (en) * 1997-06-23 2000-05-30 Fed Corporation Passive matrix OLED display
KR101086478B1 (ko) * 2004-05-27 2011-11-25 엘지디스플레이 주식회사 표시 소자용 박막 트랜지스터 기판 및 그 제조 방법
TWI312900B (en) * 2004-10-15 2009-08-01 Hannstar Display Corp Methods for manufacturing glass and for manufacturing thin film transistor with lower glass sag
KR100865445B1 (ko) 2006-05-10 2008-10-28 주식회사 엘지화학 유기 전자 소자의 제조방법 및 이에 의하여 제조된 유기전자 소자
JP5252184B2 (ja) * 2008-03-13 2013-07-31 アイシン精機株式会社 凹凸表面検査装置
JP2010206154A (ja) 2009-02-09 2010-09-16 Hitachi Displays Ltd 表示装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3675090A (en) * 1968-11-04 1972-07-04 Energy Conversion Devices Inc Film deposited semiconductor devices
JPS57106084A (en) * 1980-12-23 1982-07-01 Toshiba Corp Amorphous silicon diode
JPS57205712A (en) * 1981-06-12 1982-12-16 Seiko Epson Corp Production of liquid crystal display body

Also Published As

Publication number Publication date
EP0125666A2 (de) 1984-11-21
EP0125666A3 (en) 1986-03-26
DE3486325T2 (de) 1995-01-19
EP0125666B1 (de) 1991-08-07
EP0411726A3 (en) 1991-07-03
EP0411726B1 (de) 1994-07-20
EP0411726A2 (de) 1991-02-06
US4736229A (en) 1988-04-05
DE3486325D1 (de) 1994-08-25
ATE66095T1 (de) 1991-08-15
ATE108912T1 (de) 1994-08-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee