DE3466786D1 - Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers - Google Patents

Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers

Info

Publication number
DE3466786D1
DE3466786D1 DE8484901516T DE3466786T DE3466786D1 DE 3466786 D1 DE3466786 D1 DE 3466786D1 DE 8484901516 T DE8484901516 T DE 8484901516T DE 3466786 T DE3466786 T DE 3466786T DE 3466786 D1 DE3466786 D1 DE 3466786D1
Authority
DE
Germany
Prior art keywords
tetramethyltin
semiconductor layers
epitaxial semiconductor
dopant source
grown epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8484901516T
Other languages
German (de)
English (en)
Inventor
James Parsons
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of DE3466786D1 publication Critical patent/DE3466786D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE8484901516T 1983-04-04 1984-03-15 Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers Expired DE3466786D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48209283A 1983-04-04 1983-04-04
PCT/US1984/000403 WO1984003905A1 (en) 1983-04-04 1984-03-15 Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers

Publications (1)

Publication Number Publication Date
DE3466786D1 true DE3466786D1 (en) 1987-11-19

Family

ID=23914622

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8484901516T Expired DE3466786D1 (en) 1983-04-04 1984-03-15 Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers

Country Status (7)

Country Link
EP (1) EP0138965B1 (OSRAM)
JP (1) JPS60500954A (OSRAM)
KR (1) KR900006121B1 (OSRAM)
CA (1) CA1208812A (OSRAM)
DE (1) DE3466786D1 (OSRAM)
IT (1) IT1177641B (OSRAM)
WO (1) WO1984003905A1 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0652718B2 (ja) * 1985-09-26 1994-07-06 住友化学工業株式会社 ド−ピング方法
JPH06101436B2 (ja) * 1985-10-30 1994-12-12 セイコーエプソン株式会社 半導体装置の製造法
DE3904782A1 (de) * 1989-02-17 1990-08-23 Linde Ag Axialkolbenmaschine

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5074970A (OSRAM) * 1973-11-02 1975-06-19
US4066481A (en) * 1974-11-11 1978-01-03 Rockwell International Corporation Metalorganic chemical vapor deposition of IVA-IVA compounds and composite

Also Published As

Publication number Publication date
JPH0425239B2 (OSRAM) 1992-04-30
CA1208812A (en) 1986-07-29
KR900006121B1 (ko) 1990-08-22
EP0138965B1 (en) 1987-10-14
WO1984003905A1 (en) 1984-10-11
EP0138965A1 (en) 1985-05-02
JPS60500954A (ja) 1985-06-27
IT8447978A1 (it) 1985-10-02
IT8447978A0 (it) 1984-04-02
KR840008531A (ko) 1984-12-15
IT1177641B (it) 1987-08-26

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8365 Fully valid after opposition proceedings
8339 Ceased/non-payment of the annual fee