JPH0425239B2 - - Google Patents

Info

Publication number
JPH0425239B2
JPH0425239B2 JP59501429A JP50142984A JPH0425239B2 JP H0425239 B2 JPH0425239 B2 JP H0425239B2 JP 59501429 A JP59501429 A JP 59501429A JP 50142984 A JP50142984 A JP 50142984A JP H0425239 B2 JPH0425239 B2 JP H0425239B2
Authority
JP
Japan
Prior art keywords
tmt
tin
dopant
temperature
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59501429A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60500954A (ja
Inventor
Jeemuzu Dei Paasonsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of JPS60500954A publication Critical patent/JPS60500954A/ja
Publication of JPH0425239B2 publication Critical patent/JPH0425239B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59501429A 1983-04-04 1984-03-15 Ｍｏｃｖｄ成長エピタキシヤル半導体層用のテトラメチルスズド−パント源 Granted JPS60500954A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48209283A 1983-04-04 1983-04-04
US482092 1983-04-04

Publications (2)

Publication Number Publication Date
JPS60500954A JPS60500954A (ja) 1985-06-27
JPH0425239B2 true JPH0425239B2 (OSRAM) 1992-04-30

Family

ID=23914622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59501429A Granted JPS60500954A (ja) 1983-04-04 1984-03-15 Ｍｏｃｖｄ成長エピタキシヤル半導体層用のテトラメチルスズド−パント源

Country Status (7)

Country Link
EP (1) EP0138965B1 (OSRAM)
JP (1) JPS60500954A (OSRAM)
KR (1) KR900006121B1 (OSRAM)
CA (1) CA1208812A (OSRAM)
DE (1) DE3466786D1 (OSRAM)
IT (1) IT1177641B (OSRAM)
WO (1) WO1984003905A1 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0652718B2 (ja) * 1985-09-26 1994-07-06 住友化学工業株式会社 ド−ピング方法
JPH06101436B2 (ja) * 1985-10-30 1994-12-12 セイコーエプソン株式会社 半導体装置の製造法
DE3904782A1 (de) * 1989-02-17 1990-08-23 Linde Ag Axialkolbenmaschine

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5074970A (OSRAM) * 1973-11-02 1975-06-19
US4066481A (en) * 1974-11-11 1978-01-03 Rockwell International Corporation Metalorganic chemical vapor deposition of IVA-IVA compounds and composite

Also Published As

Publication number Publication date
CA1208812A (en) 1986-07-29
KR900006121B1 (ko) 1990-08-22
EP0138965B1 (en) 1987-10-14
WO1984003905A1 (en) 1984-10-11
EP0138965A1 (en) 1985-05-02
JPS60500954A (ja) 1985-06-27
IT8447978A1 (it) 1985-10-02
IT8447978A0 (it) 1984-04-02
DE3466786D1 (en) 1987-11-19
KR840008531A (ko) 1984-12-15
IT1177641B (it) 1987-08-26

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