JPS5074970A - - Google Patents
Info
- Publication number
- JPS5074970A JPS5074970A JP12279873A JP12279873A JPS5074970A JP S5074970 A JPS5074970 A JP S5074970A JP 12279873 A JP12279873 A JP 12279873A JP 12279873 A JP12279873 A JP 12279873A JP S5074970 A JPS5074970 A JP S5074970A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12279873A JPS5074970A (OSRAM) | 1973-11-02 | 1973-11-02 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12279873A JPS5074970A (OSRAM) | 1973-11-02 | 1973-11-02 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5074970A true JPS5074970A (OSRAM) | 1975-06-19 |
Family
ID=14844882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12279873A Pending JPS5074970A (OSRAM) | 1973-11-02 | 1973-11-02 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5074970A (OSRAM) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60500954A (ja) * | 1983-04-04 | 1985-06-27 | ヒユ−ズ・エアクラフト・カンパニ− | Ｍｏｃｖｄ成長エピタキシヤル半導体層用のテトラメチルスズド−パント源 |
| JPS62185878A (ja) * | 1986-02-12 | 1987-08-14 | Fujitsu Ltd | 金属の気相成長方法 |
| WO1991014280A1 (fr) * | 1990-03-14 | 1991-09-19 | Fujitsu Limited | Procede de croissance d'un cristal semiconducteur |
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1973
- 1973-11-02 JP JP12279873A patent/JPS5074970A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60500954A (ja) * | 1983-04-04 | 1985-06-27 | ヒユ−ズ・エアクラフト・カンパニ− | Ｍｏｃｖｄ成長エピタキシヤル半導体層用のテトラメチルスズド−パント源 |
| JPS62185878A (ja) * | 1986-02-12 | 1987-08-14 | Fujitsu Ltd | 金属の気相成長方法 |
| WO1991014280A1 (fr) * | 1990-03-14 | 1991-09-19 | Fujitsu Limited | Procede de croissance d'un cristal semiconducteur |