IT1177641B - Procedimento per depositare in maniera epitassiale uno strato di materiale semiconduttore - Google Patents

Procedimento per depositare in maniera epitassiale uno strato di materiale semiconduttore

Info

Publication number
IT1177641B
IT1177641B IT47978/84A IT4797884A IT1177641B IT 1177641 B IT1177641 B IT 1177641B IT 47978/84 A IT47978/84 A IT 47978/84A IT 4797884 A IT4797884 A IT 4797884A IT 1177641 B IT1177641 B IT 1177641B
Authority
IT
Italy
Prior art keywords
depositing
procedure
layer
semiconductive material
epitaxial
Prior art date
Application number
IT47978/84A
Other languages
English (en)
Italian (it)
Other versions
IT8447978A1 (it
IT8447978A0 (it
Inventor
James D Parsons
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of IT8447978A0 publication Critical patent/IT8447978A0/it
Publication of IT8447978A1 publication Critical patent/IT8447978A1/it
Application granted granted Critical
Publication of IT1177641B publication Critical patent/IT1177641B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT47978/84A 1983-04-04 1984-04-02 Procedimento per depositare in maniera epitassiale uno strato di materiale semiconduttore IT1177641B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US48209283A 1983-04-04 1983-04-04

Publications (3)

Publication Number Publication Date
IT8447978A0 IT8447978A0 (it) 1984-04-02
IT8447978A1 IT8447978A1 (it) 1985-10-02
IT1177641B true IT1177641B (it) 1987-08-26

Family

ID=23914622

Family Applications (1)

Application Number Title Priority Date Filing Date
IT47978/84A IT1177641B (it) 1983-04-04 1984-04-02 Procedimento per depositare in maniera epitassiale uno strato di materiale semiconduttore

Country Status (7)

Country Link
EP (1) EP0138965B1 (OSRAM)
JP (1) JPS60500954A (OSRAM)
KR (1) KR900006121B1 (OSRAM)
CA (1) CA1208812A (OSRAM)
DE (1) DE3466786D1 (OSRAM)
IT (1) IT1177641B (OSRAM)
WO (1) WO1984003905A1 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0652718B2 (ja) * 1985-09-26 1994-07-06 住友化学工業株式会社 ド−ピング方法
JPH06101436B2 (ja) * 1985-10-30 1994-12-12 セイコーエプソン株式会社 半導体装置の製造法
DE3904782A1 (de) * 1989-02-17 1990-08-23 Linde Ag Axialkolbenmaschine

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5074970A (OSRAM) * 1973-11-02 1975-06-19
US4066481A (en) * 1974-11-11 1978-01-03 Rockwell International Corporation Metalorganic chemical vapor deposition of IVA-IVA compounds and composite

Also Published As

Publication number Publication date
JPH0425239B2 (OSRAM) 1992-04-30
CA1208812A (en) 1986-07-29
KR900006121B1 (ko) 1990-08-22
EP0138965B1 (en) 1987-10-14
WO1984003905A1 (en) 1984-10-11
EP0138965A1 (en) 1985-05-02
JPS60500954A (ja) 1985-06-27
IT8447978A1 (it) 1985-10-02
IT8447978A0 (it) 1984-04-02
DE3466786D1 (en) 1987-11-19
KR840008531A (ko) 1984-12-15

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