CA1208812A - Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers - Google Patents

Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers

Info

Publication number
CA1208812A
CA1208812A CA000451098A CA451098A CA1208812A CA 1208812 A CA1208812 A CA 1208812A CA 000451098 A CA000451098 A CA 000451098A CA 451098 A CA451098 A CA 451098A CA 1208812 A CA1208812 A CA 1208812A
Authority
CA
Canada
Prior art keywords
tetramethyltin
source
temperature
carrier gas
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000451098A
Other languages
English (en)
French (fr)
Inventor
James D. Parsons
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T MVPD Group LLC
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Application granted granted Critical
Publication of CA1208812A publication Critical patent/CA1208812A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA000451098A 1983-04-04 1984-04-02 Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers Expired CA1208812A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48209283A 1983-04-04 1983-04-04
US482,092 1983-04-04

Publications (1)

Publication Number Publication Date
CA1208812A true CA1208812A (en) 1986-07-29

Family

ID=23914622

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000451098A Expired CA1208812A (en) 1983-04-04 1984-04-02 Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers

Country Status (7)

Country Link
EP (1) EP0138965B1 (OSRAM)
JP (1) JPS60500954A (OSRAM)
KR (1) KR900006121B1 (OSRAM)
CA (1) CA1208812A (OSRAM)
DE (1) DE3466786D1 (OSRAM)
IT (1) IT1177641B (OSRAM)
WO (1) WO1984003905A1 (OSRAM)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0652718B2 (ja) * 1985-09-26 1994-07-06 住友化学工業株式会社 ド−ピング方法
JPH06101436B2 (ja) * 1985-10-30 1994-12-12 セイコーエプソン株式会社 半導体装置の製造法
DE3904782A1 (de) * 1989-02-17 1990-08-23 Linde Ag Axialkolbenmaschine

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5074970A (OSRAM) * 1973-11-02 1975-06-19
US4066481A (en) * 1974-11-11 1978-01-03 Rockwell International Corporation Metalorganic chemical vapor deposition of IVA-IVA compounds and composite

Also Published As

Publication number Publication date
JPH0425239B2 (OSRAM) 1992-04-30
KR900006121B1 (ko) 1990-08-22
EP0138965B1 (en) 1987-10-14
WO1984003905A1 (en) 1984-10-11
EP0138965A1 (en) 1985-05-02
JPS60500954A (ja) 1985-06-27
IT8447978A1 (it) 1985-10-02
IT8447978A0 (it) 1984-04-02
DE3466786D1 (en) 1987-11-19
KR840008531A (ko) 1984-12-15
IT1177641B (it) 1987-08-26

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Legal Events

Date Code Title Description
MKEX Expiry