HK99888A - Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers - Google Patents
Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layersInfo
- Publication number
- HK99888A HK99888A HK99888A HK99888A HK99888A HK 99888 A HK99888 A HK 99888A HK 99888 A HK99888 A HK 99888A HK 99888 A HK99888 A HK 99888A HK 99888 A HK99888 A HK 99888A
- Authority
- HK
- Hong Kong
- Prior art keywords
- diethylberyllium
- semiconductor layers
- epitaxial semiconductor
- dopant source
- grown epitaxial
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US48209183A | 1983-04-04 | 1983-04-04 | |
PCT/US1984/000399 WO1984003995A1 (en) | 1983-04-04 | 1984-03-15 | Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers |
Publications (1)
Publication Number | Publication Date |
---|---|
HK99888A true HK99888A (en) | 1988-12-16 |
Family
ID=26770168
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK99888A HK99888A (en) | 1983-04-04 | 1988-12-08 | Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers |
Country Status (2)
Country | Link |
---|---|
HK (1) | HK99888A (en) |
NO (1) | NO163292C (en) |
-
1984
- 1984-12-03 NO NO844811A patent/NO163292C/en unknown
-
1988
- 1988-12-08 HK HK99888A patent/HK99888A/en unknown
Also Published As
Publication number | Publication date |
---|---|
NO844811L (en) | 1984-12-03 |
NO163292C (en) | 1990-05-02 |
NO163292B (en) | 1990-01-22 |
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