HK99888A - Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers - Google Patents

Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers

Info

Publication number
HK99888A
HK99888A HK99888A HK99888A HK99888A HK 99888 A HK99888 A HK 99888A HK 99888 A HK99888 A HK 99888A HK 99888 A HK99888 A HK 99888A HK 99888 A HK99888 A HK 99888A
Authority
HK
Hong Kong
Prior art keywords
diethylberyllium
semiconductor layers
epitaxial semiconductor
dopant source
grown epitaxial
Prior art date
Application number
HK99888A
Inventor
James D Parsons
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US1984/000399 external-priority patent/WO1984003995A1/en
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of HK99888A publication Critical patent/HK99888A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02546Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/0257Doping during depositing
    • H01L21/02573Conductivity type
    • H01L21/02579P-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
HK99888A 1983-04-04 1988-12-08 Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers HK99888A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US48209183A 1983-04-04 1983-04-04
PCT/US1984/000399 WO1984003995A1 (en) 1983-04-04 1984-03-15 Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers

Publications (1)

Publication Number Publication Date
HK99888A true HK99888A (en) 1988-12-16

Family

ID=26770168

Family Applications (1)

Application Number Title Priority Date Filing Date
HK99888A HK99888A (en) 1983-04-04 1988-12-08 Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers

Country Status (2)

Country Link
HK (1) HK99888A (en)
NO (1) NO163292C (en)

Also Published As

Publication number Publication date
NO844811L (en) 1984-12-03
NO163292C (en) 1990-05-02
NO163292B (en) 1990-01-22

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