DE3466142D1 - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- DE3466142D1 DE3466142D1 DE8484304546T DE3466142T DE3466142D1 DE 3466142 D1 DE3466142 D1 DE 3466142D1 DE 8484304546 T DE8484304546 T DE 8484304546T DE 3466142 T DE3466142 T DE 3466142T DE 3466142 D1 DE3466142 D1 DE 3466142D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- laser device
- semiconductor
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58121371A JPS6014482A (ja) | 1983-07-04 | 1983-07-04 | 半導体レ−ザ装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3466142D1 true DE3466142D1 (en) | 1987-10-15 |
Family
ID=14809575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484304546T Expired DE3466142D1 (en) | 1983-07-04 | 1984-07-03 | Semiconductor laser device |
Country Status (4)
Country | Link |
---|---|
US (1) | US4635268A (de) |
EP (1) | EP0132081B1 (de) |
JP (1) | JPS6014482A (de) |
DE (1) | DE3466142D1 (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4799228A (en) * | 1985-08-23 | 1989-01-17 | Kabushiki Kaisha Toshiba | Transverse-mode stabilized semiconductor laser diode with slab-coupled waveguide |
US4783425A (en) * | 1985-11-06 | 1988-11-08 | Hitachi, Ltd. | Fabrication process of semiconductor lasers |
US4839307A (en) * | 1986-05-14 | 1989-06-13 | Omron Tateisi Electronics Co. | Method of manufacturing a stripe-shaped heterojunction laser with unique current confinement |
JPS6373688A (ja) * | 1986-09-17 | 1988-04-04 | Mitsubishi Electric Corp | 半導体発光装置 |
DE3788841T2 (de) * | 1986-10-07 | 1994-05-05 | Sharp Kk | Halbleiterlaservorrichtung und Verfahren zur Herstellung derselben. |
JPS63150985A (ja) * | 1986-12-15 | 1988-06-23 | Sharp Corp | 半導体レ−ザ |
JPS63150986A (ja) * | 1986-12-15 | 1988-06-23 | Sharp Corp | 半導体レ−ザ |
JPS63166285A (ja) * | 1986-12-26 | 1988-07-09 | Toshiba Corp | 半導体発光装置の製造方法 |
JPS63177495A (ja) * | 1987-01-16 | 1988-07-21 | Sharp Corp | 半導体レ−ザ素子 |
JPS63208296A (ja) * | 1987-02-24 | 1988-08-29 | Sharp Corp | 半導体装置 |
JP2656482B2 (ja) * | 1987-03-11 | 1997-09-24 | 株式会社日立製作所 | 半導体レーザ装置 |
JPS63271992A (ja) * | 1987-04-28 | 1988-11-09 | Sharp Corp | 半導体レ−ザ素子 |
JPS63287082A (ja) * | 1987-05-19 | 1988-11-24 | Sharp Corp | 半導体レ−ザ素子 |
JPH01186688A (ja) * | 1987-09-02 | 1989-07-26 | Sharp Corp | 半導体レーザ装置 |
DE68909632T2 (de) * | 1988-02-09 | 1994-03-10 | Toshiba Kawasaki Kk | Halbleiterlaser-Vorrichtung und deren Herstellungsverfahren. |
JP2522021B2 (ja) * | 1988-07-22 | 1996-08-07 | 日本電気株式会社 | 半導体レ―ザ |
US5003548A (en) * | 1988-09-21 | 1991-03-26 | Cornell Research Foundation, Inc. | High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (λ-658 nm) laser |
CA2008379C (en) * | 1989-01-24 | 1993-08-31 | Hajime Sakiyama | Semiconductor lasers |
EP0408373B1 (de) * | 1989-07-12 | 2000-04-26 | Kabushiki Kaisha Toshiba | Im transversalen Mode schwingender Halbleiterlaser |
JPH03131083A (ja) * | 1989-10-17 | 1991-06-04 | Mitsubishi Electric Corp | 半導体レーザ装置の製造方法 |
US4989213A (en) * | 1989-10-30 | 1991-01-29 | Polaroid Corporation | Narrow divergence, single quantum well, separate confinement, algaas laser |
JPH03237784A (ja) * | 1990-02-15 | 1991-10-23 | Omron Corp | 半導体素子およびその製造方法 |
US5272711A (en) * | 1992-05-12 | 1993-12-21 | Trw Inc. | High-power semiconductor laser diode |
KR970001896B1 (ko) * | 1992-05-27 | 1997-02-18 | 엘지전자 주식회사 | 반도체 레이저 다이오드의 구조 및 그 제조방법 |
CA2203117C (en) * | 1994-10-18 | 2001-12-25 | Atsushi Okubo | Semiconductor laser device |
CA2246975A1 (en) * | 1997-09-18 | 1999-03-18 | Mitsui Chemicals, Incorporated | Method of fabricating semiconductor laser |
JP4462657B2 (ja) * | 1998-06-04 | 2010-05-12 | ソニー株式会社 | 半導体発光素子およびその製造方法 |
JP2006108405A (ja) * | 2004-10-06 | 2006-04-20 | Sharp Corp | 半導体レーザ素子およびモノリシック2波長半導体レーザ装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US29395A (en) * | 1860-07-31 | Car-coupling | ||
US3920491A (en) * | 1973-11-08 | 1975-11-18 | Nippon Electric Co | Method of fabricating a double heterostructure injection laser utilizing a stripe-shaped region |
GB1531238A (en) * | 1975-01-09 | 1978-11-08 | Standard Telephones Cables Ltd | Injection lasers |
JPS609356B2 (ja) * | 1975-08-28 | 1985-03-09 | 富士通株式会社 | 半導体発光装置の製法 |
JPS545273A (en) * | 1977-06-14 | 1979-01-16 | Toshiba Corp | Vapor removing device |
DE3065856D1 (en) * | 1979-02-13 | 1984-01-19 | Fujitsu Ltd | A semiconductor light emitting device |
JPS575070A (en) * | 1980-06-11 | 1982-01-11 | Toshiba Corp | Fixing device |
JPS5710285A (en) * | 1980-06-20 | 1982-01-19 | Hitachi Ltd | Semiconductor laser |
GB2105099B (en) * | 1981-07-02 | 1985-06-12 | Standard Telephones Cables Ltd | Injection laser |
-
1983
- 1983-07-04 JP JP58121371A patent/JPS6014482A/ja active Pending
-
1984
- 1984-07-03 DE DE8484304546T patent/DE3466142D1/de not_active Expired
- 1984-07-03 EP EP84304546A patent/EP0132081B1/de not_active Expired
- 1984-07-05 US US06/627,818 patent/US4635268A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPS6014482A (ja) | 1985-01-25 |
EP0132081B1 (de) | 1987-09-09 |
US4635268A (en) | 1987-01-06 |
EP0132081A3 (en) | 1985-04-10 |
EP0132081A2 (de) | 1985-01-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |