DE3447635C2 - - Google Patents
Info
- Publication number
- DE3447635C2 DE3447635C2 DE3447635A DE3447635A DE3447635C2 DE 3447635 C2 DE3447635 C2 DE 3447635C2 DE 3447635 A DE3447635 A DE 3447635A DE 3447635 A DE3447635 A DE 3447635A DE 3447635 C2 DE3447635 C2 DE 3447635C2
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic Table without C-Metal linkages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58246949A JPS60140880A (ja) | 1983-12-28 | 1983-12-28 | 太陽電池の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3447635A1 DE3447635A1 (de) | 1985-07-18 |
DE3447635C2 true DE3447635C2 (de) | 1987-01-15 |
Family
ID=17156132
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19843447635 Granted DE3447635A1 (de) | 1983-12-28 | 1984-12-28 | Verfahren zur herstellung von solarzellen |
Country Status (4)
Country | Link |
---|---|
US (1) | US4643913A (de) |
JP (1) | JPS60140880A (de) |
DE (1) | DE3447635A1 (de) |
FR (1) | FR2557731B1 (de) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63119273A (ja) * | 1986-11-06 | 1988-05-23 | Sharp Corp | 光電変換素子 |
DE3739174A1 (de) * | 1987-11-19 | 1989-06-01 | Huels Chemische Werke Ag | Kondensierte acetessigsaeureester-titanchelate und verfahren zu deren herstellung |
US5698451A (en) * | 1988-06-10 | 1997-12-16 | Mobil Solar Energy Corporation | Method of fabricating contacts for solar cells |
JPH03502627A (ja) * | 1988-06-10 | 1991-06-13 | エイエスイー・アメリカス・インコーポレーテッド | 太陽電池用接点製作の改良された方法 |
US7323581B1 (en) | 1990-07-06 | 2008-01-29 | Advanced Technology Materials, Inc. | Source reagent compositions and method for forming metal films on a substrate by chemical vapor deposition |
US5840897A (en) * | 1990-07-06 | 1998-11-24 | Advanced Technology Materials, Inc. | Metal complex source reagents for chemical vapor deposition |
US5178685A (en) * | 1991-06-11 | 1993-01-12 | Mobil Solar Energy Corporation | Method for forming solar cell contacts and interconnecting solar cells |
JP3724592B2 (ja) * | 1993-07-26 | 2005-12-07 | ハイニックス セミコンダクター アメリカ インコーポレイテッド | 半導体基板の平坦化方法 |
US5679815A (en) * | 1994-09-16 | 1997-10-21 | Advanced Technology Materials, Inc. | Tantalum and niobium reagents useful in chemical vapor deposition processes, and process for depositing coatings using the same |
US6015917A (en) | 1998-01-23 | 2000-01-18 | Advanced Technology Materials, Inc. | Tantalum amide precursors for deposition of tantalum nitride on a substrate |
DE19811878C2 (de) * | 1998-03-18 | 2002-09-19 | Siemens Solar Gmbh | Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen |
AU751353B2 (en) * | 1998-07-03 | 2002-08-15 | Canon Kabushiki Kaisha | Crystal growth process, semiconductor device, and its production process |
US7012292B1 (en) * | 1998-11-25 | 2006-03-14 | Advanced Technology Materials, Inc | Oxidative top electrode deposition process, and microelectronic device structure |
EP1313744A4 (de) * | 2000-08-28 | 2004-03-31 | Advanced Tech Materials | Reagenzzusammensetzung und verfahren zur bildung von metallschichten auf substraten mittels chemischer gasphasenabscheidung |
US7163596B2 (en) * | 2002-06-07 | 2007-01-16 | E. I. Du Pont Nemours And Company | Fibers and ribbons for use in the manufacture of solar cells |
KR100878236B1 (ko) * | 2002-06-12 | 2009-01-13 | 삼성전자주식회사 | 금속 패턴의 형성 방법 및 이를 이용한 박막 트랜지스터기판의 제조 방법 |
US6960675B2 (en) * | 2003-10-14 | 2005-11-01 | Advanced Technology Materials, Inc. | Tantalum amide complexes for depositing tantalum-containing films, and method of making same |
US7166732B2 (en) * | 2004-06-16 | 2007-01-23 | Advanced Technology Materials, Inc. | Copper (I) compounds useful as deposition precursors of copper thin films |
US20060092495A1 (en) * | 2004-10-28 | 2006-05-04 | Fuji Photo Film Co., Ltd. | Anti-glare anti-reflection film, polarizing plate, and image display device |
US9312557B2 (en) * | 2005-05-11 | 2016-04-12 | Schlumberger Technology Corporation | Fuel cell apparatus and method for downhole power systems |
TW200825200A (en) * | 2006-12-05 | 2008-06-16 | Advanced Tech Materials | Metal aminotroponiminates, bis-oxazolinates and guanidinates |
US7750173B2 (en) | 2007-01-18 | 2010-07-06 | Advanced Technology Materials, Inc. | Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films |
US8294024B2 (en) * | 2008-08-13 | 2012-10-23 | E I Du Pont De Nemours And Company | Processes for forming photovoltaic devices |
US8840701B2 (en) * | 2008-08-13 | 2014-09-23 | E I Du Pont De Nemours And Company | Multi-element metal powders for silicon solar cells |
US20100037941A1 (en) * | 2008-08-13 | 2010-02-18 | E. I. Du Pont De Nemours And Company | Compositions and processes for forming photovoltaic devices |
US20100037948A1 (en) * | 2008-08-14 | 2010-02-18 | Integrated Digital Technologies, Inc. | Solar cells provided with color modulation and method for fabricating the same |
US8710355B2 (en) | 2008-12-22 | 2014-04-29 | E I Du Pont De Nemours And Company | Compositions and processes for forming photovoltaic devices |
US8294027B2 (en) | 2010-01-19 | 2012-10-23 | International Business Machines Corporation | Efficiency in antireflective coating layers for solar cells |
US8535971B2 (en) * | 2010-02-12 | 2013-09-17 | Heraeus Precious Metals North America Conshohocken Llc | Method for applying full back surface field and silver busbar to solar cell |
CN109014180B (zh) | 2010-05-04 | 2021-08-24 | 太阳帕斯特有限责任公司 | 包含铅氧化物和碲氧化物的厚膜糊料及其在半导体装置制造中的用途 |
TWI745562B (zh) | 2017-04-18 | 2021-11-11 | 美商太陽帕斯特有限責任公司 | 導電糊料組成物及用其製成的半導體裝置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IN152814B (de) * | 1978-08-08 | 1984-04-14 | Westinghouse Electric Corp | |
US4361598A (en) * | 1979-08-10 | 1982-11-30 | Westinghouse Electric Corp. | Polymerized solutions for depositing optical oxide coatings |
US4251285A (en) * | 1979-08-14 | 1981-02-17 | Westinghouse Electric Corp. | Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon |
US4328260A (en) * | 1981-01-23 | 1982-05-04 | Solarex Corporation | Method for applying antireflective coating on solar cell |
JPS58128775A (ja) * | 1982-01-28 | 1983-08-01 | Toshiba Corp | 太陽電池の製造方法 |
-
1983
- 1983-12-28 JP JP58246949A patent/JPS60140880A/ja active Granted
-
1984
- 1984-12-27 FR FR8419930A patent/FR2557731B1/fr not_active Expired
- 1984-12-28 US US06/687,162 patent/US4643913A/en not_active Expired - Lifetime
- 1984-12-28 DE DE19843447635 patent/DE3447635A1/de active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0441514B2 (de) | 1992-07-08 |
FR2557731B1 (fr) | 1988-10-28 |
DE3447635A1 (de) | 1985-07-18 |
FR2557731A1 (fr) | 1985-07-05 |
US4643913A (en) | 1987-02-17 |
JPS60140880A (ja) | 1985-07-25 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEW ENERGY AND INDUSTRIAL TECHNOLOGY DEVELOPMENT O |
|
8328 | Change in the person/name/address of the agent |
Free format text: PAGENBERG, J., DR.JUR. FROHWITTER, B., DIPL.-ING., RECHTSANWAELTE GEISSLER, B., DIPL.-PHYS.DR.JUR.,PAT.- U. RECHTSANW. KOWAL-WOLK, T., DR.-JUR. WOLHAENDLER, J. PLUTA, J., DR., RECHTSANWAELTE BARDEHLE, H., DIPL.-ING. DOST, W., DIPL.-CHEM. DR.RER.NAT. ALTENBURG, U., DIPL.-PHYS. HOFFMANN, W., DIPL.-PHYS. ROST, J., DIPL.-ING., PAT.-ANWAELTE, 8000 MUENCHEN |