DE3439803A1 - Abschaltthyristor - Google Patents

Abschaltthyristor

Info

Publication number
DE3439803A1
DE3439803A1 DE19843439803 DE3439803A DE3439803A1 DE 3439803 A1 DE3439803 A1 DE 3439803A1 DE 19843439803 DE19843439803 DE 19843439803 DE 3439803 A DE3439803 A DE 3439803A DE 3439803 A1 DE3439803 A1 DE 3439803A1
Authority
DE
Germany
Prior art keywords
conductivity type
type
base layer
layer
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19843439803
Other languages
German (de)
English (en)
Other versions
DE3439803C2 (en:Method
Inventor
Yoshiaki Hisamoto
Toshihiro Nakajima
Kozo Itami Hyogo Yamagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3439803A1 publication Critical patent/DE3439803A1/de
Application granted granted Critical
Publication of DE3439803C2 publication Critical patent/DE3439803C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/60—Gate-turn-off devices 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/192—Base regions of thyristors
    • H10D62/206—Cathode base regions of thyristors

Landscapes

  • Thyristors (AREA)
DE19843439803 1983-11-30 1984-10-31 Abschaltthyristor Granted DE3439803A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58228042A JPS60119776A (ja) 1983-11-30 1983-11-30 ゲ−トタ−ンオフサイリスタ

Publications (2)

Publication Number Publication Date
DE3439803A1 true DE3439803A1 (de) 1985-06-05
DE3439803C2 DE3439803C2 (en:Method) 1990-07-26

Family

ID=16870285

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843439803 Granted DE3439803A1 (de) 1983-11-30 1984-10-31 Abschaltthyristor

Country Status (3)

Country Link
US (1) US4609933A (en:Method)
JP (1) JPS60119776A (en:Method)
DE (1) DE3439803A1 (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3620618A1 (de) * 1985-06-26 1987-01-08 Hitachi Ltd Gto-thyristor

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214471A (ja) * 1985-03-19 1986-09-24 Res Dev Corp Of Japan ゲ−ト制御半導体装置
EP0366916B1 (en) * 1988-10-04 1995-06-14 Kabushiki Kaisha Toshiba Shorted-anode semiconductor device and methods of making the same
JP4748149B2 (ja) * 2007-12-24 2011-08-17 株式会社デンソー 半導体装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2644654A1 (de) * 1976-09-03 1978-03-09 Bbc Brown Boveri & Cie Halbleiterbauelement
EP0008535A2 (en) * 1978-08-18 1980-03-05 Kabushiki Kaisha Meidensha A gate controlled semiconductor device
EP0009367A1 (en) * 1978-09-14 1980-04-02 Hitachi, Ltd. Gate turn-off thyristor
DE2846637A1 (de) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen
EP0015649A1 (en) * 1979-02-16 1980-09-17 Fujitsu Limited Thyristor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54111790A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Semiconductor switchgear
JPS574101A (en) * 1980-06-11 1982-01-09 Hitachi Ltd Moisture sensitive element
JPS5773956A (en) * 1980-10-27 1982-05-08 Hitachi Ltd Glass coated semiconductor device
JPS5778172A (en) * 1980-11-04 1982-05-15 Hitachi Ltd Gate turn-off thyristor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2644654A1 (de) * 1976-09-03 1978-03-09 Bbc Brown Boveri & Cie Halbleiterbauelement
EP0008535A2 (en) * 1978-08-18 1980-03-05 Kabushiki Kaisha Meidensha A gate controlled semiconductor device
EP0009367A1 (en) * 1978-09-14 1980-04-02 Hitachi, Ltd. Gate turn-off thyristor
DE2846637A1 (de) * 1978-10-11 1980-04-30 Bbc Brown Boveri & Cie Halbleiterbauelement mit mindestens einem planaren pn-uebergang und zonen- guard-ringen
EP0015649A1 (en) * 1979-02-16 1980-09-17 Fujitsu Limited Thyristor

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US-Z: IEEE Transactions on Electron Devices, 1976, Vol. ED-23, Nr.8, S.883-887 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3620618A1 (de) * 1985-06-26 1987-01-08 Hitachi Ltd Gto-thyristor

Also Published As

Publication number Publication date
JPS60119776A (ja) 1985-06-27
US4609933A (en) 1986-09-02
DE3439803C2 (en:Method) 1990-07-26
JPH026229B2 (en:Method) 1990-02-08

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee