DE3427833C2 - Amorphe Silicium Solar-Batterie - Google Patents

Amorphe Silicium Solar-Batterie

Info

Publication number
DE3427833C2
DE3427833C2 DE3427833A DE3427833A DE3427833C2 DE 3427833 C2 DE3427833 C2 DE 3427833C2 DE 3427833 A DE3427833 A DE 3427833A DE 3427833 A DE3427833 A DE 3427833A DE 3427833 C2 DE3427833 C2 DE 3427833C2
Authority
DE
Germany
Prior art keywords
amorphous silicon
transparent conductive
solar battery
conductive film
silicon solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3427833A
Other languages
German (de)
English (en)
Other versions
DE3427833A1 (de
Inventor
Hideyo Iida
Toshio Mishuku
Nobuyasu Shiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Publication of DE3427833A1 publication Critical patent/DE3427833A1/de
Application granted granted Critical
Publication of DE3427833C2 publication Critical patent/DE3427833C2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/138—Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Photovoltaic Devices (AREA)
DE3427833A 1983-08-05 1984-07-27 Amorphe Silicium Solar-Batterie Expired - Lifetime DE3427833C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58142556A JPS6034076A (ja) 1983-08-05 1983-08-05 非晶質シリコン太陽電池

Publications (2)

Publication Number Publication Date
DE3427833A1 DE3427833A1 (de) 1985-02-21
DE3427833C2 true DE3427833C2 (de) 1994-02-24

Family

ID=15318081

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3427833A Expired - Lifetime DE3427833C2 (de) 1983-08-05 1984-07-27 Amorphe Silicium Solar-Batterie

Country Status (5)

Country Link
US (1) US4675469A (enExample)
JP (1) JPS6034076A (enExample)
AU (1) AU548553B2 (enExample)
DE (1) DE3427833C2 (enExample)
FR (1) FR2550386B1 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6068663A (ja) * 1983-09-26 1985-04-19 Komatsu Denshi Kinzoku Kk アモルフアスシリコン太陽電池
US4956685A (en) * 1984-12-21 1990-09-11 Licentia Patent-Verwaltungs Gmbh Thin film solar cell having a concave n-i-p structure
JPH0784651B2 (ja) * 1986-06-20 1995-09-13 ティーディーケイ株式会社 透明導電膜およびその製造方法
US4769086A (en) * 1987-01-13 1988-09-06 Atlantic Richfield Company Thin film solar cell with nickel back
AU662360B2 (en) * 1991-10-22 1995-08-31 Canon Kabushiki Kaisha Photovoltaic device
DE69942501D1 (de) * 1998-07-06 2010-07-29 Nissha Printing Durchsichtige leitfähige folie für durchsichtige berührungsempfindliche tafel, durchsichtige berührungsempfindliche tafel mit durchsichtiger leitfähiger folie und verfahren zur herstellung einer durchsichtige leitfähige folie
JP2001060702A (ja) * 1999-06-18 2001-03-06 Nippon Sheet Glass Co Ltd 光電変換装置用基板およびこれを用いた光電変換装置
JP2009513018A (ja) * 2005-10-20 2009-03-26 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 溶液から調製されるナノクリスタル太陽電池
CN101552299B (zh) * 2008-04-02 2011-06-29 富士迈半导体精密工业（上海）有限公司 太阳能面板
US20100139753A1 (en) * 2008-12-05 2010-06-10 Applied Materials, Inc. Semiconductor device and method of producing a semiconductor device
WO2010063590A1 (en) * 2008-12-05 2010-06-10 Applied Materials Inc. Semiconductor device and method of producing a semiconductor device
EP2194583A1 (en) * 2008-12-05 2010-06-09 Applied Materials, Inc. Semiconductor device and method of producing a semiconductor device
CN103280466B (zh) * 2013-05-09 2015-07-29 南开大学 基于AlOx/Ag/ZnO结构的高反射高绒度背电极
CN103887351A (zh) * 2014-04-09 2014-06-25 南开大学 一种多孔氧化铝/氧化锌复合陷光背电极及其应用

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4147564A (en) * 1977-11-18 1979-04-03 Sri International Method of controlled surface texturization of crystalline semiconductor material
JPS6041878B2 (ja) * 1979-02-14 1985-09-19 シャープ株式会社 薄膜太陽電池装置
JPS5853869A (ja) * 1981-09-26 1983-03-30 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPS5857756A (ja) * 1981-10-01 1983-04-06 Agency Of Ind Science & Technol 非晶質太陽電池
IL67926A (en) * 1982-03-18 1986-04-29 Energy Conversion Devices Inc Photo-voltaic device with radiation reflector means
US4442310A (en) * 1982-07-15 1984-04-10 Rca Corporation Photodetector having enhanced back reflection
CA1209681A (en) * 1982-08-04 1986-08-12 Exxon Research And Engineering Company Optically enhanced thin film photovoltaic device using lithography defined random surfaces

Also Published As

Publication number Publication date
FR2550386B1 (fr) 1990-01-05
JPH0455351B2 (enExample) 1992-09-03
AU548553B2 (en) 1985-12-19
DE3427833A1 (de) 1985-02-21
AU3095184A (en) 1985-02-07
US4675469A (en) 1987-06-23
JPS6034076A (ja) 1985-02-21
FR2550386A1 (fr) 1985-02-08

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition