DE3410427A1 - Hochleistungs-metalloxyd-feldeffekttransistor - Google Patents
Hochleistungs-metalloxyd-feldeffekttransistorInfo
- Publication number
- DE3410427A1 DE3410427A1 DE19843410427 DE3410427A DE3410427A1 DE 3410427 A1 DE3410427 A1 DE 3410427A1 DE 19843410427 DE19843410427 DE 19843410427 DE 3410427 A DE3410427 A DE 3410427A DE 3410427 A1 DE3410427 A1 DE 3410427A1
- Authority
- DE
- Germany
- Prior art keywords
- area
- pad
- field effect
- source
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 title claims description 15
- 229910044991 metal oxide Inorganic materials 0.000 title claims description 10
- 150000004706 metal oxides Chemical class 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 14
- 239000000969 carrier Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims 3
- 238000005847 Wailach reaction Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
- H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/66—Vertical DMOS [VDMOS] FETs
- H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]
- H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/393—Body regions of DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/251—Source or drain electrodes for field-effect devices
- H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/477,012 US4789882A (en) | 1983-03-21 | 1983-03-21 | High power MOSFET with direct connection from connection pads to underlying silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3410427A1 true DE3410427A1 (de) | 1984-09-27 |
| DE3410427C2 DE3410427C2 (enrdf_load_stackoverflow) | 1990-02-01 |
Family
ID=23894146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19843410427 Granted DE3410427A1 (de) | 1983-03-21 | 1984-03-21 | Hochleistungs-metalloxyd-feldeffekttransistor |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4789882A (enrdf_load_stackoverflow) |
| JP (2) | JPS59214254A (enrdf_load_stackoverflow) |
| KR (1) | KR890004548B1 (enrdf_load_stackoverflow) |
| DE (1) | DE3410427A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2543366B1 (enrdf_load_stackoverflow) |
| GB (1) | GB2137811B (enrdf_load_stackoverflow) |
| IT (1) | IT1173885B (enrdf_load_stackoverflow) |
| SE (1) | SE8401090L (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3540433A1 (de) * | 1984-11-20 | 1986-05-22 | Mitsubishi Denki K.K., Tokio/Tokyo | Integriertes mosfet-bauelement |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4789882A (en) * | 1983-03-21 | 1988-12-06 | International Rectifier Corporation | High power MOSFET with direct connection from connection pads to underlying silicon |
| US4631564A (en) * | 1984-10-23 | 1986-12-23 | Rca Corporation | Gate shield structure for power MOS device |
| US4798810A (en) * | 1986-03-10 | 1989-01-17 | Siliconix Incorporated | Method for manufacturing a power MOS transistor |
| US4775879A (en) * | 1987-03-18 | 1988-10-04 | Motorola Inc. | FET structure arrangement having low on resistance |
| GB2209433B (en) * | 1987-09-04 | 1990-06-13 | Plessey Co Plc | Semi-conductor devices |
| JP2550702B2 (ja) * | 1989-04-26 | 1996-11-06 | 日本電装株式会社 | 電力用半導体素子 |
| US5313088A (en) * | 1990-09-19 | 1994-05-17 | Nec Corporation | Vertical field effect transistor with diffused protection diode |
| US5404040A (en) * | 1990-12-21 | 1995-04-04 | Siliconix Incorporated | Structure and fabrication of power MOSFETs, including termination structures |
| US5304831A (en) * | 1990-12-21 | 1994-04-19 | Siliconix Incorporated | Low on-resistance power MOS technology |
| US5430314A (en) * | 1992-04-23 | 1995-07-04 | Siliconix Incorporated | Power device with buffered gate shield region |
| US5798287A (en) * | 1993-12-24 | 1998-08-25 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Method for forming a power MOS device chip |
| DE69321965T2 (de) * | 1993-12-24 | 1999-06-02 | Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | MOS-Leistungs-Chip-Typ und Packungszusammenbau |
| EP0660402B1 (en) * | 1993-12-24 | 1998-11-04 | Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno | Power semiconductor device |
| EP0697728B1 (en) * | 1994-08-02 | 1999-04-21 | STMicroelectronics S.r.l. | MOS-technology power device chip and package assembly |
| US5701023A (en) * | 1994-08-03 | 1997-12-23 | National Semiconductor Corporation | Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness |
| DE19740904B4 (de) * | 1997-09-17 | 2004-10-28 | Infineon Technologies Ag | Verfahren zum Beseitigen von Sauerstoff-Restverunreinigungen aus tiegelgezogenen Siliziumwafern |
| US6707103B1 (en) * | 1998-03-05 | 2004-03-16 | International Rectifier Corporation | Low voltage rad hard MOSFET |
| US6545316B1 (en) | 2000-06-23 | 2003-04-08 | Silicon Wireless Corporation | MOSFET devices having linear transfer characteristics when operating in velocity saturation mode and methods of forming and operating same |
| US6476456B1 (en) * | 1999-06-10 | 2002-11-05 | International Rectifier Corporation | Integrated radiation hardened power mosgated device and schottky diode |
| JP4122113B2 (ja) | 1999-06-24 | 2008-07-23 | 新電元工業株式会社 | 高破壊耐量電界効果型トランジスタ |
| US6781194B2 (en) * | 2001-04-11 | 2004-08-24 | Silicon Semiconductor Corporation | Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes therein |
| US6784486B2 (en) * | 2000-06-23 | 2004-08-31 | Silicon Semiconductor Corporation | Vertical power devices having retrograded-doped transition regions therein |
| US20030091556A1 (en) * | 2000-12-04 | 2003-05-15 | Ruoslahti Erkki I. | Methods of inhibiting tumor growth and angiogenesis with anastellin |
| EP2383788B1 (en) * | 2001-04-04 | 2019-07-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device with a main base region |
| EP1396030B1 (en) * | 2001-04-11 | 2011-06-29 | Silicon Semiconductor Corporation | Vertical power semiconductor device and method of making the same |
| US6852634B2 (en) * | 2002-06-27 | 2005-02-08 | Semiconductor Components Industries L.L.C. | Low cost method of providing a semiconductor device having a high channel density |
| US6870221B2 (en) | 2002-12-09 | 2005-03-22 | Semiconductor Components Industries, Llc | Power switching transistor with low drain to gate capacitance |
| US7385273B2 (en) * | 2005-06-10 | 2008-06-10 | International Rectifier Corporation | Power semiconductor device |
| JP4125363B2 (ja) * | 2005-07-08 | 2008-07-30 | 松下電器産業株式会社 | 半導体装置および電気機器 |
| JP2006310838A (ja) * | 2006-04-05 | 2006-11-09 | Hvvi Semiconductors Inc | パワー半導体装置およびそのための方法 |
| US9484451B2 (en) | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
| US9431249B2 (en) | 2011-12-01 | 2016-08-30 | Vishay-Siliconix | Edge termination for super junction MOSFET devices |
| US8841718B2 (en) | 2012-01-16 | 2014-09-23 | Microsemi Corporation | Pseudo self aligned radhard MOSFET and process of manufacture |
| US9614043B2 (en) | 2012-02-09 | 2017-04-04 | Vishay-Siliconix | MOSFET termination trench |
| US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
| US9508596B2 (en) | 2014-06-20 | 2016-11-29 | Vishay-Siliconix | Processes used in fabricating a metal-insulator-semiconductor field effect transistor |
| US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
| US9882044B2 (en) | 2014-08-19 | 2018-01-30 | Vishay-Siliconix | Edge termination for super-junction MOSFETs |
| JP2019165182A (ja) * | 2018-03-20 | 2019-09-26 | 株式会社東芝 | 半導体装置 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3131727A1 (de) * | 1980-08-18 | 1982-03-11 | International Rectifier Corp., Los Angeles, Calif. | "mos-feldeffekttransistor und verfahren zu seiner hestellung" |
| GB2103877A (en) * | 1981-08-07 | 1983-02-23 | Hitachi Ltd | Gate protection for insulated gate semiconductor devices |
| DE3346286A1 (de) * | 1982-12-21 | 1984-06-28 | International Rectifier Corp., Los Angeles, Calif. | Hochleistungs-metalloxid-feldeffekttransistor- halbleiterbauteil |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3271201A (en) * | 1962-10-30 | 1966-09-06 | Itt | Planar semiconductor devices |
| US3812521A (en) * | 1973-02-16 | 1974-05-21 | Motorola Inc | Bonding pad substructure for integrated circuits |
| NL7606483A (nl) * | 1976-06-16 | 1977-12-20 | Philips Nv | Inrichting voor het mengen van signalen. |
| JPS54112179A (en) * | 1978-02-23 | 1979-09-01 | Sony Corp | Semiconductor device |
| JPS5578563A (en) * | 1978-12-08 | 1980-06-13 | Mitsubishi Electric Corp | Semiconductor device |
| JPS5655066A (en) * | 1979-10-11 | 1981-05-15 | Nec Corp | Semiconductor device |
| DE3072002D1 (en) * | 1979-11-14 | 1987-09-10 | Fujitsu Ltd | An output transistor of a ttl device with a means for discharging carriers |
| DE3103444A1 (de) * | 1981-02-02 | 1982-10-21 | Siemens AG, 1000 Berlin und 8000 München | Vertikal-mis-feldeffekttransistor mit kleinem durchlasswiderstand |
| JPS57206073A (en) * | 1981-06-12 | 1982-12-17 | Hitachi Ltd | Mis semiconductor device |
| US4789882A (en) * | 1983-03-21 | 1988-12-06 | International Rectifier Corporation | High power MOSFET with direct connection from connection pads to underlying silicon |
| US4631564A (en) * | 1984-10-23 | 1986-12-23 | Rca Corporation | Gate shield structure for power MOS device |
| JP2559801B2 (ja) * | 1988-03-30 | 1996-12-04 | 日産自動車株式会社 | パワートランジスタ |
-
1983
- 1983-03-21 US US06/477,012 patent/US4789882A/en not_active Expired - Lifetime
-
1984
- 1984-02-28 SE SE8401090A patent/SE8401090L/xx not_active Application Discontinuation
- 1984-03-13 KR KR1019840001250A patent/KR890004548B1/ko not_active Expired
- 1984-03-16 GB GB08406974A patent/GB2137811B/en not_active Expired
- 1984-03-19 IT IT20126/84A patent/IT1173885B/it active
- 1984-03-21 FR FR8404410A patent/FR2543366B1/fr not_active Expired
- 1984-03-21 JP JP59054137A patent/JPS59214254A/ja active Granted
- 1984-03-21 DE DE19843410427 patent/DE3410427A1/de active Granted
-
1993
- 1993-06-08 JP JP5163306A patent/JP2760734B2/ja not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3131727A1 (de) * | 1980-08-18 | 1982-03-11 | International Rectifier Corp., Los Angeles, Calif. | "mos-feldeffekttransistor und verfahren zu seiner hestellung" |
| GB2103877A (en) * | 1981-08-07 | 1983-02-23 | Hitachi Ltd | Gate protection for insulated gate semiconductor devices |
| DE3346286A1 (de) * | 1982-12-21 | 1984-06-28 | International Rectifier Corp., Los Angeles, Calif. | Hochleistungs-metalloxid-feldeffekttransistor- halbleiterbauteil |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3540433A1 (de) * | 1984-11-20 | 1986-05-22 | Mitsubishi Denki K.K., Tokio/Tokyo | Integriertes mosfet-bauelement |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59214254A (ja) | 1984-12-04 |
| JPH06318708A (ja) | 1994-11-15 |
| GB2137811B (en) | 1987-01-07 |
| JPH0414511B2 (enrdf_load_stackoverflow) | 1992-03-13 |
| DE3410427C2 (enrdf_load_stackoverflow) | 1990-02-01 |
| FR2543366A1 (fr) | 1984-09-28 |
| SE8401090L (sv) | 1984-09-22 |
| GB2137811A (en) | 1984-10-10 |
| FR2543366B1 (fr) | 1985-12-13 |
| KR840008222A (ko) | 1984-12-13 |
| SE8401090D0 (sv) | 1984-02-28 |
| IT1173885B (it) | 1987-06-24 |
| KR890004548B1 (ko) | 1989-11-13 |
| JP2760734B2 (ja) | 1998-06-04 |
| US4789882A (en) | 1988-12-06 |
| IT8420126A0 (it) | 1984-03-19 |
| GB8406974D0 (en) | 1984-04-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |