DE3382294D1 - Mittel zum verhindern des durchbruchs einer isolierschicht in halbleiteranordnungen. - Google Patents
Mittel zum verhindern des durchbruchs einer isolierschicht in halbleiteranordnungen.Info
- Publication number
- DE3382294D1 DE3382294D1 DE8383101657T DE3382294T DE3382294D1 DE 3382294 D1 DE3382294 D1 DE 3382294D1 DE 8383101657 T DE8383101657 T DE 8383101657T DE 3382294 T DE3382294 T DE 3382294T DE 3382294 D1 DE3382294 D1 DE 3382294D1
- Authority
- DE
- Germany
- Prior art keywords
- breakdown
- preventing
- insulating layer
- semiconductor devices
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015556 catabolic process Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2702382A JPS58143561A (ja) | 1982-02-22 | 1982-02-22 | 半導体装置 |
JP57064684A JPS58182271A (ja) | 1982-04-20 | 1982-04-20 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3382294D1 true DE3382294D1 (de) | 1991-07-04 |
Family
ID=26364889
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8383101657T Expired - Lifetime DE3382294D1 (de) | 1982-02-22 | 1983-02-21 | Mittel zum verhindern des durchbruchs einer isolierschicht in halbleiteranordnungen. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5113230A (de) |
EP (1) | EP0087155B1 (de) |
DE (1) | DE3382294D1 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2635411A1 (fr) * | 1988-08-11 | 1990-02-16 | Sgs Thomson Microelectronics | Memoire de type eprom a haute densite d'integration avec une organisation en damier, un facteur de couplage ameliore et une possibilite de redondance |
US5268589A (en) * | 1990-09-28 | 1993-12-07 | Siemens Aktiengesellschaft | Semiconductor chip having at least one electrical resistor means |
EP0598146A1 (de) * | 1992-11-16 | 1994-05-25 | ALCATEL BELL Naamloze Vennootschap | Schutzanordnung gegen elektrostatische Entladungen |
TW344130B (en) | 1995-10-11 | 1998-11-01 | Int Rectifier Corp | Termination structure for semiconductor device and process for its manufacture |
US5940721A (en) * | 1995-10-11 | 1999-08-17 | International Rectifier Corporation | Termination structure for semiconductor devices and process for manufacture thereof |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3518506A (en) * | 1967-12-06 | 1970-06-30 | Ibm | Semiconductor device with contact metallurgy thereon,and method for making same |
US3862017A (en) * | 1970-02-04 | 1975-01-21 | Hideo Tsunemitsu | Method for producing a thin film passive circuit element |
JPS5928992B2 (ja) * | 1975-02-14 | 1984-07-17 | 日本電信電話株式会社 | Mosトランジスタおよびその製造方法 |
JPS5275987A (en) * | 1975-12-22 | 1977-06-25 | Hitachi Ltd | Gate protecting device |
JPS5299786A (en) * | 1976-02-18 | 1977-08-22 | Agency Of Ind Science & Technol | Mos integrated circuit |
JPS54137286A (en) * | 1978-04-17 | 1979-10-24 | Nec Corp | Semiconductor device |
JPS556870A (en) * | 1978-06-29 | 1980-01-18 | Nec Corp | Mos type semiconductor device |
CA1142271A (en) * | 1979-03-28 | 1983-03-01 | Thomas E. Hendrickson | Field effect semiconductor device |
US4288806A (en) * | 1979-05-29 | 1981-09-08 | Xerox Corporation | High voltage MOSFET with overlapping electrode structure |
JPS5811750B2 (ja) * | 1979-06-04 | 1983-03-04 | 株式会社日立製作所 | 高耐圧抵抗素子 |
JPS5651874A (en) * | 1979-10-05 | 1981-05-09 | Nec Corp | Semiconductor device |
JPS5852347B2 (ja) * | 1980-02-04 | 1983-11-22 | 株式会社日立製作所 | 高耐圧半導体装置 |
JPS56169368A (en) * | 1980-05-30 | 1981-12-26 | Sharp Corp | High withstand voltage mos field effect semiconductor device |
JPS5724563A (en) * | 1980-07-21 | 1982-02-09 | Nec Corp | Semiconductor device |
US4424579A (en) * | 1981-02-23 | 1984-01-03 | Burroughs Corporation | Mask programmable read-only memory stacked above a semiconductor substrate |
-
1983
- 1983-02-21 EP EP83101657A patent/EP0087155B1/de not_active Expired
- 1983-02-21 DE DE8383101657T patent/DE3382294D1/de not_active Expired - Lifetime
-
1990
- 1990-08-08 US US07/565,215 patent/US5113230A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0087155A2 (de) | 1983-08-31 |
EP0087155A3 (en) | 1986-08-20 |
US5113230A (en) | 1992-05-12 |
EP0087155B1 (de) | 1991-05-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |