DE3364979D1 - Process for forming thin film - Google Patents

Process for forming thin film

Info

Publication number
DE3364979D1
DE3364979D1 DE8383109690T DE3364979T DE3364979D1 DE 3364979 D1 DE3364979 D1 DE 3364979D1 DE 8383109690 T DE8383109690 T DE 8383109690T DE 3364979 T DE3364979 T DE 3364979T DE 3364979 D1 DE3364979 D1 DE 3364979D1
Authority
DE
Germany
Prior art keywords
thin film
forming thin
forming
film
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383109690T
Other languages
German (de)
English (en)
Inventor
Kazufumi Azuma
Mitsuo Nakatani
Kazuo Nate
Masaaki Okunaka
Hitoshi Yokono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3364979D1 publication Critical patent/DE3364979D1/de
Expired legal-status Critical Current

Links

Classifications

    • H10P14/69215—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H10P14/24—
    • H10P14/2905—
    • H10P14/2922—
    • H10P14/2923—
    • H10P14/3411—
    • H10P14/69433—
    • H10P34/42—
    • H10P34/422—
    • H10P14/6338—
    • H10P14/6682—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/093—Laser beam treatment in general

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Photovoltaic Devices (AREA)
DE8383109690T 1982-09-29 1983-09-28 Process for forming thin film Expired DE3364979D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57168463A JPS5958819A (ja) 1982-09-29 1982-09-29 薄膜形成方法

Publications (1)

Publication Number Publication Date
DE3364979D1 true DE3364979D1 (en) 1986-09-04

Family

ID=15868574

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383109690T Expired DE3364979D1 (en) 1982-09-29 1983-09-28 Process for forming thin film

Country Status (4)

Country Link
US (1) US4495218A (cg-RX-API-DMAC10.html)
EP (1) EP0104658B1 (cg-RX-API-DMAC10.html)
JP (1) JPS5958819A (cg-RX-API-DMAC10.html)
DE (1) DE3364979D1 (cg-RX-API-DMAC10.html)

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JPS61234534A (ja) * 1985-04-11 1986-10-18 Semiconductor Energy Lab Co Ltd 窒化珪素被膜作成方法
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JPS62226631A (ja) * 1986-03-28 1987-10-05 Agency Of Ind Science & Technol 絶縁膜形成方法
US4918028A (en) * 1986-04-14 1990-04-17 Canon Kabushiki Kaisha Process for photo-assisted epitaxial growth using remote plasma with in-situ etching
JPS62293740A (ja) * 1986-06-13 1987-12-21 Fujitsu Ltd 半導体装置の製造方法
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US4720395A (en) * 1986-08-25 1988-01-19 Anicon, Inc. Low temperature silicon nitride CVD process
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GB2250751B (en) * 1990-08-24 1995-04-12 Kawasaki Heavy Ind Ltd Process for the production of dielectric thin films
JP3038413B2 (ja) * 1990-12-21 2000-05-08 大阪瓦斯株式会社 光ｃｖｄ法による膜作成装置
JPH06333857A (ja) * 1993-05-27 1994-12-02 Semiconductor Energy Lab Co Ltd 成膜装置および成膜方法
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US5686320A (en) * 1995-01-20 1997-11-11 Goldstar Co., Ltd. Method for forming semiconductor layer of thin film transistor by using temperature difference
US5728224A (en) * 1995-09-13 1998-03-17 Tetra Laval Holdings & Finance S.A. Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate
WO1997015402A1 (en) * 1995-10-24 1997-05-01 Tetra Laval Holdings & Finance S.A. Apparatus and method for manufacturing a packaging material
US5976993A (en) 1996-03-28 1999-11-02 Applied Materials, Inc. Method for reducing the intrinsic stress of high density plasma films
KR19990030660A (ko) * 1997-10-02 1999-05-06 윤종용 전자빔을 이용한 반도체장치의 층간 절연막 형성방법
US6628237B1 (en) * 2000-03-25 2003-09-30 Marconi Communications Inc. Remote communication using slot antenna
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Also Published As

Publication number Publication date
US4495218A (en) 1985-01-22
EP0104658A1 (en) 1984-04-04
JPH049369B2 (cg-RX-API-DMAC10.html) 1992-02-20
EP0104658B1 (en) 1986-07-30
JPS5958819A (ja) 1984-04-04

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee