DE3339625C2 - - Google Patents
Info
- Publication number
- DE3339625C2 DE3339625C2 DE19833339625 DE3339625A DE3339625C2 DE 3339625 C2 DE3339625 C2 DE 3339625C2 DE 19833339625 DE19833339625 DE 19833339625 DE 3339625 A DE3339625 A DE 3339625A DE 3339625 C2 DE3339625 C2 DE 3339625C2
- Authority
- DE
- Germany
- Prior art keywords
- carrier gas
- groove
- substance
- vessel
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19833339625 DE3339625A1 (de) | 1983-11-02 | 1983-11-02 | Vorrichtung zum anreichern eines traegergases mit dem dampf eines wenig fluechtigen stoffes |
| GB08427276A GB2151662B (en) | 1983-11-02 | 1984-10-29 | Device for enriching a carrier gas with the vapour of a slightly volatile material for chemical vapour deposition method |
| FR8416553A FR2554131B1 (fr) | 1983-11-02 | 1984-10-30 | Procede pour enrichir un gaz vehicule de la vapeur d'une substance peu volatile |
| JP22903684A JPS61110766A (ja) | 1983-11-02 | 1984-11-01 | キヤリヤ−ガス富化用装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19833339625 DE3339625A1 (de) | 1983-11-02 | 1983-11-02 | Vorrichtung zum anreichern eines traegergases mit dem dampf eines wenig fluechtigen stoffes |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3339625A1 DE3339625A1 (de) | 1985-05-09 |
| DE3339625C2 true DE3339625C2 (OSRAM) | 1991-01-31 |
Family
ID=6213274
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19833339625 Granted DE3339625A1 (de) | 1983-11-02 | 1983-11-02 | Vorrichtung zum anreichern eines traegergases mit dem dampf eines wenig fluechtigen stoffes |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS61110766A (OSRAM) |
| DE (1) | DE3339625A1 (OSRAM) |
| FR (1) | FR2554131B1 (OSRAM) |
| GB (1) | GB2151662B (OSRAM) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19638100C1 (de) * | 1996-09-18 | 1998-03-05 | Fraunhofer Ges Forschung | Vorrichtung zum Erzeugen eines dampfförmigen Reaktionsproduktes aus Feststoffteilen |
| US7122085B2 (en) | 2002-07-30 | 2006-10-17 | Asm America, Inc. | Sublimation bed employing carrier gas guidance structures |
| US7156380B2 (en) | 2003-09-29 | 2007-01-02 | Asm International, N.V. | Safe liquid source containers |
| US7601225B2 (en) | 2002-06-17 | 2009-10-13 | Asm International N.V. | System for controlling the sublimation of reactants |
| US7833353B2 (en) | 2007-01-24 | 2010-11-16 | Asm Japan K.K. | Liquid material vaporization apparatus for semiconductor processing apparatus |
| US8012876B2 (en) | 2008-12-02 | 2011-09-06 | Asm International N.V. | Delivery of vapor precursor from solid source |
| US8343583B2 (en) | 2008-07-10 | 2013-01-01 | Asm International N.V. | Method for vaporizing non-gaseous precursor in a fluidized bed |
| US9117773B2 (en) | 2009-08-26 | 2015-08-25 | Asm America, Inc. | High concentration water pulses for atomic layer deposition |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3702923A1 (de) * | 1987-01-31 | 1988-08-11 | Philips Patentverwaltung | Vorrichtung zum anreichern eines traegergases mit dem dampf eines wenig fluechtigen stoffes |
| DE3801147A1 (de) * | 1988-01-16 | 1989-07-27 | Philips Patentverwaltung | Vorrichtung zum erzeugen eines mit dem dampf eines wenig fluechtigen stoffes angereicherten gasstroms |
| JPH0269389A (ja) * | 1988-08-31 | 1990-03-08 | Toyo Stauffer Chem Co | 有機金属気相成長法における固体有機金属化合物の飽和蒸気生成方法 |
| DE3931189A1 (de) * | 1989-09-19 | 1991-03-28 | Philips Patentverwaltung | Vorrichtung und verfahren zum erzeugen eines mit dem dampf eines wenig fluechtigen stoffes angereicherten gasstroms |
| JPH0513166U (ja) * | 1991-08-06 | 1993-02-23 | ダイワ精工株式会社 | 魚釣用リ−ルの釣糸止め装置 |
| US7186385B2 (en) | 2002-07-17 | 2007-03-06 | Applied Materials, Inc. | Apparatus for providing gas to a processing chamber |
| KR101480971B1 (ko) | 2006-10-10 | 2015-01-09 | 에이에스엠 아메리카, 인코포레이티드 | 전구체 전달 시스템 |
| US7775508B2 (en) | 2006-10-31 | 2010-08-17 | Applied Materials, Inc. | Ampoule for liquid draw and vapor draw with a continuous level sensor |
| US8146896B2 (en) | 2008-10-31 | 2012-04-03 | Applied Materials, Inc. | Chemical precursor ampoule for vapor deposition processes |
| US11926894B2 (en) | 2016-09-30 | 2024-03-12 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
| US10876205B2 (en) | 2016-09-30 | 2020-12-29 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
| US11634812B2 (en) | 2018-08-16 | 2023-04-25 | Asm Ip Holding B.V. | Solid source sublimator |
| US11624113B2 (en) | 2019-09-13 | 2023-04-11 | Asm Ip Holding B.V. | Heating zone separation for reactant evaporation system |
| US12054825B2 (en) | 2021-06-22 | 2024-08-06 | Applied Materials, Inc. | Bottom fed sublimation bed for high saturation efficiency in semiconductor applications |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1204588A (fr) * | 1958-04-22 | 1960-01-27 | E F Drew & Co | Appareil permettant de réaliser des réactions chimiques continues |
| FR1532742A (fr) * | 1967-07-19 | 1968-07-12 | Bristol Aeroplane Plastics Ltd | Procédé et dispositif pour mélanger les fluides |
| FR1581523A (OSRAM) * | 1968-05-08 | 1969-09-19 | ||
| US3801073A (en) * | 1972-12-27 | 1974-04-02 | Kates W Co | Fluid mixer |
| US4129624A (en) * | 1977-05-13 | 1978-12-12 | The W. A. Kates Company | Fluid mixer |
| JPS5635426A (en) * | 1979-08-31 | 1981-04-08 | Fujitsu Ltd | Vapor-phase epitaxial growth device |
| DE3136895A1 (de) * | 1981-09-17 | 1983-03-31 | Philips Patentverwaltung Gmbh, 2000 Hamburg | "vorrichtung zum verdampfen von ausgangsstoffen fuer die reaktive abscheidung aus der gasphase" |
-
1983
- 1983-11-02 DE DE19833339625 patent/DE3339625A1/de active Granted
-
1984
- 1984-10-29 GB GB08427276A patent/GB2151662B/en not_active Expired
- 1984-10-30 FR FR8416553A patent/FR2554131B1/fr not_active Expired
- 1984-11-01 JP JP22903684A patent/JPS61110766A/ja active Granted
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19638100C1 (de) * | 1996-09-18 | 1998-03-05 | Fraunhofer Ges Forschung | Vorrichtung zum Erzeugen eines dampfförmigen Reaktionsproduktes aus Feststoffteilen |
| US7601225B2 (en) | 2002-06-17 | 2009-10-13 | Asm International N.V. | System for controlling the sublimation of reactants |
| US7851019B2 (en) | 2002-06-17 | 2010-12-14 | Asm International N.V. | Method for controlling the sublimation of reactants |
| US8309173B2 (en) | 2002-06-17 | 2012-11-13 | Asm International N.V. | System for controlling the sublimation of reactants |
| US7122085B2 (en) | 2002-07-30 | 2006-10-17 | Asm America, Inc. | Sublimation bed employing carrier gas guidance structures |
| US7156380B2 (en) | 2003-09-29 | 2007-01-02 | Asm International, N.V. | Safe liquid source containers |
| US7497420B2 (en) | 2003-09-29 | 2009-03-03 | Asm International, N.V. | Safe liquid source containers |
| US7971861B2 (en) | 2003-09-29 | 2011-07-05 | Asm International N.V. | Safe liquid source containers |
| US7833353B2 (en) | 2007-01-24 | 2010-11-16 | Asm Japan K.K. | Liquid material vaporization apparatus for semiconductor processing apparatus |
| US8343583B2 (en) | 2008-07-10 | 2013-01-01 | Asm International N.V. | Method for vaporizing non-gaseous precursor in a fluidized bed |
| US8012876B2 (en) | 2008-12-02 | 2011-09-06 | Asm International N.V. | Delivery of vapor precursor from solid source |
| US9117773B2 (en) | 2009-08-26 | 2015-08-25 | Asm America, Inc. | High concentration water pulses for atomic layer deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2151662B (en) | 1986-07-23 |
| JPH0530908B2 (OSRAM) | 1993-05-11 |
| FR2554131A1 (fr) | 1985-05-03 |
| GB2151662A (en) | 1985-07-24 |
| DE3339625A1 (de) | 1985-05-09 |
| FR2554131B1 (fr) | 1988-10-14 |
| JPS61110766A (ja) | 1986-05-29 |
| GB8427276D0 (en) | 1984-12-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |