DE3331245C2 - - Google Patents

Info

Publication number
DE3331245C2
DE3331245C2 DE3331245A DE3331245A DE3331245C2 DE 3331245 C2 DE3331245 C2 DE 3331245C2 DE 3331245 A DE3331245 A DE 3331245A DE 3331245 A DE3331245 A DE 3331245A DE 3331245 C2 DE3331245 C2 DE 3331245C2
Authority
DE
Germany
Prior art keywords
target
magnet
atomizing device
drive
magnets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3331245A
Other languages
German (de)
English (en)
Other versions
DE3331245A1 (de
Inventor
Charles B. San Jose Calif. Us Garrett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Medical Systems Inc
Original Assignee
Varian Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates Inc filed Critical Varian Associates Inc
Publication of DE3331245A1 publication Critical patent/DE3331245A1/de
Application granted granted Critical
Publication of DE3331245C2 publication Critical patent/DE3331245C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE19833331245 1982-09-03 1983-08-30 Ebene magnetron-zerstaeubungsvorrichtung Granted DE3331245A1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41464982A 1982-09-03 1982-09-03
US06/504,598 US4444643A (en) 1982-09-03 1983-06-16 Planar magnetron sputtering device

Publications (2)

Publication Number Publication Date
DE3331245A1 DE3331245A1 (de) 1984-03-08
DE3331245C2 true DE3331245C2 (en, 2012) 1992-03-12

Family

ID=27022637

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833331245 Granted DE3331245A1 (de) 1982-09-03 1983-08-30 Ebene magnetron-zerstaeubungsvorrichtung

Country Status (3)

Country Link
US (1) US4444643A (en, 2012)
DE (1) DE3331245A1 (en, 2012)
GB (1) GB2126257B (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014109991A1 (de) * 2014-07-16 2016-01-21 Von Ardenne Gmbh Magnetron-Anordnung, Prozessieranordnung, Verfahren und Verwendung einer Magnetron-Anordnung

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JPS61501328A (ja) * 1984-03-02 1986-07-03 リ−ジェンツ・オブ・ザ・ユニヴァ−シティ・オブ・ミネソタ 制御された真空ア−クによる材料デポジション方法及び装置
US4673477A (en) * 1984-03-02 1987-06-16 Regents Of The University Of Minnesota Controlled vacuum arc material deposition, method and apparatus
DE3413001A1 (de) * 1984-04-06 1985-10-17 Leybold-Heraeus GmbH, 5000 Köln Katodenzerstaeubungsanlage mit nebeneinander angeordneten stationen
US4552639A (en) * 1984-07-20 1985-11-12 Varian Associates, Inc. Magnetron sputter etching system
EP0169680A1 (en) * 1984-07-20 1986-01-29 Varian Associates, Inc. Magnetron sputter etching system
US4724058A (en) * 1984-08-13 1988-02-09 Vac-Tec Systems, Inc. Method and apparatus for arc evaporating large area targets
DE3580953D1 (de) * 1984-08-31 1991-01-31 Anelva Corp Entladungsvorrichtung.
JPS6260866A (ja) * 1985-08-02 1987-03-17 Fujitsu Ltd マグネトロンスパツタ装置
JPS6247478A (ja) * 1985-08-26 1987-03-02 バリアン・アソシエイツ・インコ−ポレイテツド 磁場の円運動と放射状運動を組み合わせたプレ−ナ・マグネトロン・スパツタリング装置
US4632719A (en) * 1985-09-18 1986-12-30 Varian Associates, Inc. Semiconductor etching apparatus with magnetic array and vertical shield
JPH0812856B2 (ja) * 1986-01-17 1996-02-07 株式会社日立製作所 プラズマ処理方法および装置
EP0306491B1 (en) * 1986-04-04 1994-03-09 The Regents Of The University Of Minnesota Arc coating of refractory metal compounds
DE3619194A1 (de) * 1986-06-06 1987-12-10 Leybold Heraeus Gmbh & Co Kg Magnetron-zerstaeubungskatode fuer vakuum-beschichtungsanlagen
US4842703A (en) * 1988-02-23 1989-06-27 Eaton Corporation Magnetron cathode and method for sputter coating
US4865708A (en) * 1988-11-14 1989-09-12 Vac-Tec Systems, Inc. Magnetron sputtering cathode
US4892633A (en) * 1988-11-14 1990-01-09 Vac-Tec Systems, Inc. Magnetron sputtering cathode
US4915805A (en) * 1988-11-21 1990-04-10 At&T Bell Laboratories Hollow cathode type magnetron apparatus construction
US5130005A (en) * 1990-10-31 1992-07-14 Materials Research Corporation Magnetron sputter coating method and apparatus with rotating magnet cathode
US5409590A (en) * 1989-04-17 1995-04-25 Materials Research Corporation Target cooling and support for magnetron sputter coating apparatus
US4995958A (en) * 1989-05-22 1991-02-26 Varian Associates, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
US6024843A (en) * 1989-05-22 2000-02-15 Novellus Systems, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
DE3929695C2 (de) * 1989-09-07 1996-12-19 Leybold Ag Vorrichtung zum Beschichten eines Substrats
US5252194A (en) * 1990-01-26 1993-10-12 Varian Associates, Inc. Rotating sputtering apparatus for selected erosion
US5320728A (en) * 1990-03-30 1994-06-14 Applied Materials, Inc. Planar magnetron sputtering source producing improved coating thickness uniformity, step coverage and step coverage uniformity
US5242566A (en) * 1990-04-23 1993-09-07 Applied Materials, Inc. Planar magnetron sputtering source enabling a controlled sputtering profile out to the target perimeter
US5171415A (en) * 1990-12-21 1992-12-15 Novellus Systems, Inc. Cooling method and apparatus for magnetron sputtering
DE69105941T2 (de) * 1991-01-25 1995-05-04 Shibaura Eng Works Ltd Zerstäubungsvorrichtung.
US5108574A (en) * 1991-01-29 1992-04-28 The Boc Group, Inc. Cylindrical magnetron shield structure
DE4107505A1 (de) * 1991-03-08 1992-09-10 Leybold Ag Verfahren zum betrieb einer sputteranlage und vorrichtung zur durchfuehrung des verfahrens
DE4125110C2 (de) * 1991-07-30 1999-09-09 Leybold Ag Magnetron-Zerstäubungskathode für Vakuumbeschichtungsanlagen
US5194131A (en) * 1991-08-16 1993-03-16 Varian Associates, Inc. Apparatus and method for multiple ring sputtering from a single target
US5314597A (en) * 1992-03-20 1994-05-24 Varian Associates, Inc. Sputtering apparatus with a magnet array having a geometry for a specified target erosion profile
US5374343A (en) * 1992-05-15 1994-12-20 Anelva Corporation Magnetron cathode assembly
US5262028A (en) * 1992-06-01 1993-11-16 Sierra Applied Sciences, Inc. Planar magnetron sputtering magnet assembly
US5417833A (en) * 1993-04-14 1995-05-23 Varian Associates, Inc. Sputtering apparatus having a rotating magnet array and fixed electromagnets
CH690805A5 (de) * 1993-05-04 2001-01-15 Unaxis Balzers Ag Magnetfeldunterstützte Zerstäubungsanordnung und Vakuumbehandlungsanlage hiermit.
US5433835B1 (en) * 1993-11-24 1997-05-20 Applied Materials Inc Sputtering device and target with cover to hold cooling fluid
US6199259B1 (en) 1993-11-24 2001-03-13 Applied Komatsu Technology, Inc. Autoclave bonding of sputtering target assembly
US5487822A (en) * 1993-11-24 1996-01-30 Applied Materials, Inc. Integrated sputtering target assembly
DE4414470A1 (de) * 1994-04-26 1995-11-02 Leybold Ag Zerstäuberkathode
DE4426200A1 (de) * 1994-07-23 1996-01-25 Leybold Ag Kathodenzerstäubungsvorrichtung
US5597459A (en) * 1995-02-08 1997-01-28 Nobler Technologies, Inc. Magnetron cathode sputtering method and apparatus
US6039848A (en) * 1995-07-10 2000-03-21 Cvc Products, Inc. Ultra-high vacuum apparatus and method for high productivity physical vapor deposition.
US6221217B1 (en) 1995-07-10 2001-04-24 Cvc, Inc. Physical vapor deposition system having reduced thickness backing plate
GB2318590B (en) * 1995-07-10 1999-04-14 Cvc Products Inc Magnetron cathode apparatus and method for sputtering
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US6340415B1 (en) 1998-01-05 2002-01-22 Applied Materials, Inc. Method and apparatus for enhancing a sputtering target's lifetime
US6342131B1 (en) 1998-04-17 2002-01-29 Kabushiki Kaisha Toshiba Method of depositing a multilayer thin film by means of magnetron sputtering which controls the magnetic field
US5980707A (en) * 1998-12-18 1999-11-09 Sierra Applied Sciences, Inc. Apparatus and method for a magnetron cathode with moving magnet assembly
US6306265B1 (en) 1999-02-12 2001-10-23 Applied Materials, Inc. High-density plasma for ionized metal deposition capable of exciting a plasma wave
EP1063679B1 (en) 1999-06-21 2008-01-09 Bekaert Advanced Coatings NV. Erosion profile compensated magnetron with moving magnet assembly
US6258217B1 (en) 1999-09-29 2001-07-10 Plasma-Therm, Inc. Rotating magnet array and sputter source
US6228236B1 (en) * 1999-10-22 2001-05-08 Applied Materials, Inc. Sputter magnetron having two rotation diameters
US6471830B1 (en) 2000-10-03 2002-10-29 Veeco/Cvc, Inc. Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system
US6758950B2 (en) * 2002-01-14 2004-07-06 Seagate Technology Llc Controlled magnetron shape for uniformly sputtered thin film
US6852202B2 (en) 2002-05-21 2005-02-08 Applied Materials, Inc. Small epicyclic magnetron with controlled radial sputtering profile
US6841050B2 (en) 2002-05-21 2005-01-11 Applied Materials, Inc. Small planetary magnetron
US7351480B2 (en) * 2002-06-11 2008-04-01 Southwest Research Institute Tubular structures with coated interior surfaces
US7674360B2 (en) * 2003-12-12 2010-03-09 Applied Materials, Inc. Mechanism for varying the spacing between sputter magnetron and target
US7513982B2 (en) 2004-01-07 2009-04-07 Applied Materials, Inc. Two dimensional magnetron scanning for flat panel sputtering
US8500975B2 (en) * 2004-01-07 2013-08-06 Applied Materials, Inc. Method and apparatus for sputtering onto large flat panels
US20060049040A1 (en) * 2004-01-07 2006-03-09 Applied Materials, Inc. Apparatus and method for two dimensional magnetron scanning for sputtering onto flat panels
US20050178653A1 (en) * 2004-02-17 2005-08-18 Charles Fisher Method for elimination of sputtering into the backing plate of a target/backing plate assembly
JP2008505250A (ja) * 2004-07-01 2008-02-21 カーディナル・シージー・カンパニー マグネトロンスパッタリング用の振動磁石を有する円筒形のターゲット
US7790003B2 (en) * 2004-10-12 2010-09-07 Southwest Research Institute Method for magnetron sputter deposition
US7520965B2 (en) * 2004-10-12 2009-04-21 Southwest Research Institute Magnetron sputtering apparatus and method for depositing a coating using same
US7592051B2 (en) * 2005-02-09 2009-09-22 Southwest Research Institute Nanostructured low-Cr Cu-Cr coatings for high temperature oxidation resistance
US7799190B2 (en) * 2005-04-14 2010-09-21 Tango Systems, Inc. Target backing plate for sputtering system
US8470141B1 (en) * 2005-04-29 2013-06-25 Angstrom Sciences, Inc. High power cathode
JP4923450B2 (ja) * 2005-07-01 2012-04-25 富士ゼロックス株式会社 バッチ処理支援装置および方法、プログラム
US20070084720A1 (en) * 2005-07-13 2007-04-19 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070012559A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Method of improving magnetron sputtering of large-area substrates using a removable anode
US20070012663A1 (en) * 2005-07-13 2007-01-18 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070012558A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Magnetron sputtering system for large-area substrates
US20070051616A1 (en) * 2005-09-07 2007-03-08 Le Hienminh H Multizone magnetron assembly
US20070056843A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US7588668B2 (en) * 2005-09-13 2009-09-15 Applied Materials, Inc. Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
US20070056850A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Large-area magnetron sputtering chamber with individually controlled sputtering zones
US9771647B1 (en) * 2008-12-08 2017-09-26 Michael A. Scobey Cathode assemblies and sputtering systems
WO2011146673A2 (en) * 2010-05-19 2011-11-24 General Plasma, Inc. High target utilization moving magnet planar magnetron scanning method
US20130017316A1 (en) * 2011-07-15 2013-01-17 Intermolecular, Inc. Sputter gun
DE102012211664A1 (de) * 2012-07-04 2014-01-09 Von Ardenne Anlagentechnik Gmbh Magnetronsputtereinrichtung
US9844828B2 (en) * 2012-08-31 2017-12-19 Illinois Tool Works Inc. Wire feeder assembly with motor mount
US10032872B2 (en) 2013-05-17 2018-07-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing the same, and apparatus for manufacturing semiconductor device
US20160133446A1 (en) * 2014-11-12 2016-05-12 Proportional Technologies, Inc. Moving magnet assembly to increase the utility of a rectangular magnetron sputtering target
US11479847B2 (en) 2020-10-14 2022-10-25 Alluxa, Inc. Sputtering system with a plurality of cathode assemblies
CN115074678B (zh) * 2022-06-20 2023-05-16 肇庆市科润真空设备有限公司 不锈钢薄板连续镀膜用的多弧靶机构及pvd镀膜装置

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US3956093A (en) * 1974-12-16 1976-05-11 Airco, Inc. Planar magnetron sputtering method and apparatus
DE2707144A1 (de) * 1976-02-19 1977-08-25 Sloan Technology Corp Kathodenzerstaeubungsvorrichtung
US4116806A (en) * 1977-12-08 1978-09-26 Battelle Development Corporation Two-sided planar magnetron sputtering apparatus
US4175030A (en) * 1977-12-08 1979-11-20 Battelle Development Corporation Two-sided planar magnetron sputtering apparatus
US4312731A (en) * 1979-04-24 1982-01-26 Vac-Tec Systems, Inc. Magnetically enhanced sputtering device and method
EP0045822B1 (en) * 1980-08-08 1985-05-29 Battelle Development Corporation Cylindrical magnetron sputtering cathode
US4356073A (en) * 1981-02-12 1982-10-26 Shatterproof Glass Corporation Magnetron cathode sputtering apparatus
GB2101638B (en) * 1981-07-16 1985-07-24 Ampex Moveable cathodes/targets for high rate sputtering system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014109991A1 (de) * 2014-07-16 2016-01-21 Von Ardenne Gmbh Magnetron-Anordnung, Prozessieranordnung, Verfahren und Verwendung einer Magnetron-Anordnung

Also Published As

Publication number Publication date
GB2126257A (en) 1984-03-21
US4444643A (en) 1984-04-24
DE3331245A1 (de) 1984-03-08
GB8323336D0 (en) 1983-10-05
GB2126257B (en) 1986-10-01

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Legal Events

Date Code Title Description
8127 New person/name/address of the applicant

Owner name: VARIAN ASSOCIATES, INC., PALO ALTO, CALIF., US

8128 New person/name/address of the agent

Representative=s name: BERNHARDT, K., DIPL.-ING., PAT.-ANW., 8000 MUENCHE

8128 New person/name/address of the agent

Representative=s name: BLUMBACH, P., DIPL.-ING., 6200 WIESBADEN WESER, W.

8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee