DE3308389A1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE3308389A1
DE3308389A1 DE19833308389 DE3308389A DE3308389A1 DE 3308389 A1 DE3308389 A1 DE 3308389A1 DE 19833308389 DE19833308389 DE 19833308389 DE 3308389 A DE3308389 A DE 3308389A DE 3308389 A1 DE3308389 A1 DE 3308389A1
Authority
DE
Germany
Prior art keywords
semiconductor device
insulating container
wall
gate electrode
container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19833308389
Other languages
German (de)
English (en)
Other versions
DE3308389C2 (cg-RX-API-DMAC10.html
Inventor
Yuzuru Itami Hyogo Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3308389A1 publication Critical patent/DE3308389A1/de
Application granted granted Critical
Publication of DE3308389C2 publication Critical patent/DE3308389C2/de
Granted legal-status Critical Current

Links

Classifications

    • H10W72/851—
    • H10W72/30—
    • H10W76/138—
    • H10W72/073—
    • H10W72/07337—
    • H10W72/07533—
    • H10W72/522—
    • H10W72/5363—
    • H10W72/5524—

Landscapes

  • Thyristors (AREA)
  • Die Bonding (AREA)
DE19833308389 1982-03-09 1983-03-09 Halbleitervorrichtung Granted DE3308389A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57038904A JPS58154239A (ja) 1982-03-09 1982-03-09 半導体装置

Publications (2)

Publication Number Publication Date
DE3308389A1 true DE3308389A1 (de) 1983-11-17
DE3308389C2 DE3308389C2 (cg-RX-API-DMAC10.html) 1989-01-05

Family

ID=12538177

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19833308389 Granted DE3308389A1 (de) 1982-03-09 1983-03-09 Halbleitervorrichtung

Country Status (2)

Country Link
JP (1) JPS58154239A (cg-RX-API-DMAC10.html)
DE (1) DE3308389A1 (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3805489A1 (de) * 1988-02-22 1989-08-31 Mitsubishi Electric Corp Halbleitervorrichtung

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19615112A1 (de) * 1996-04-17 1997-10-23 Asea Brown Boveri Leistungshalbleiterbauelement
CN110026640A (zh) * 2019-05-15 2019-07-19 江阴市赛英电子股份有限公司 一种具有阻银结构的薄型电极钎焊陶瓷管壳

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1564444B2 (de) * 1966-03-24 1977-09-15 N V Philips' Gloeilampenfabneken, Eindhoven (Niederlande) Halbleiteranordnung mit einem isolierenden traeger
DE2426113B2 (de) * 1973-06-12 1977-09-22 Asea AB, Västeraas (Schweden) Thyristor-halbleiteranordnung
DE2534703B2 (de) * 1975-08-04 1979-06-28 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
DE2855493A1 (de) * 1978-12-22 1980-07-03 Bbc Brown Boveri & Cie Leistungs-halbleiterbauelement
US4236171A (en) * 1978-07-17 1980-11-25 International Rectifier Corporation High power transistor having emitter pattern with symmetric lead connection pads

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1564444B2 (de) * 1966-03-24 1977-09-15 N V Philips' Gloeilampenfabneken, Eindhoven (Niederlande) Halbleiteranordnung mit einem isolierenden traeger
DE2426113B2 (de) * 1973-06-12 1977-09-22 Asea AB, Västeraas (Schweden) Thyristor-halbleiteranordnung
DE2534703B2 (de) * 1975-08-04 1979-06-28 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Abschaltbarer Thyristor
US4236171A (en) * 1978-07-17 1980-11-25 International Rectifier Corporation High power transistor having emitter pattern with symmetric lead connection pads
DE2855493A1 (de) * 1978-12-22 1980-07-03 Bbc Brown Boveri & Cie Leistungs-halbleiterbauelement

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3805489A1 (de) * 1988-02-22 1989-08-31 Mitsubishi Electric Corp Halbleitervorrichtung
DE3805489C2 (de) * 1988-02-22 1995-06-29 Mitsubishi Electric Corp Halbleitervorrichtung

Also Published As

Publication number Publication date
JPS6332255B2 (cg-RX-API-DMAC10.html) 1988-06-29
JPS58154239A (ja) 1983-09-13
DE3308389C2 (cg-RX-API-DMAC10.html) 1989-01-05

Similar Documents

Publication Publication Date Title
DE1575252C2 (de) Warmeschrumpfbare Isolierstoffmuffe
DE4321053C2 (de) Druckkontaktierte Halbleitervorrichtung und Verfahren zur Herstellung einer druckkontaktierten Halbleitervorrichtung
DE1197548B (cg-RX-API-DMAC10.html)
DE2101609B2 (de) Kontaktanordnung fuer ein halbleiterbauelement
DE2014289A1 (de) Scheibenförmiges Halbleiterbauele ment und Verfahren zu seiner Herstellung
DE1539863A1 (de) Transistor
DE1098102B (de) Verfahren zur Herstellung einer elektrischen Halbleitervorrichtung
DE2226613A1 (de) Halbleiterbauelement
DE1464622A1 (de) Halbleiterbauelement
DE2555662A1 (de) Waermeableitendes halbleiterbauelement
DE2004776C2 (de) Halbleiterbauelement
DE3308389A1 (de) Halbleitervorrichtung
DE2536024A1 (de) Hochspannungsvakuumschalter
DE1248814B (de) Halbleiterbauelement und zugehörige Kühlordnung
DE1490071B2 (de) Gasdichte kontakteinschmelzung fuer eine elektrische kupplungs verbindung
DE6804915U (de) Gluehlampe
DE2104726A1 (de) Halbleiterbauelement
DE1297233B (de) Feldeffekttransistor
DE1943219A1 (de) Halbleitereinrichtung
DE1916399A1 (de) Halbleitergleichrichter
DE2103626A1 (de) Strahlungsdetektor
DE1937638A1 (de) Halbleiterbauelement mit einer Huelle mit zwei Stromleitern
DE3007382A1 (de) Halbleitereinrichtung mit basisanschluss niedriger impedanz
DE1539986A1 (de) Abgedichtete elek?
DE2746406A1 (de) Thyristor mit hoher gatt-empfindlichkeit und hohem dv/dt-wert

Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee