DE3277346D1 - Methode of manufacturing a stacked semiconductor device - Google Patents

Methode of manufacturing a stacked semiconductor device

Info

Publication number
DE3277346D1
DE3277346D1 DE8282305016T DE3277346T DE3277346D1 DE 3277346 D1 DE3277346 D1 DE 3277346D1 DE 8282305016 T DE8282305016 T DE 8282305016T DE 3277346 T DE3277346 T DE 3277346T DE 3277346 D1 DE3277346 D1 DE 3277346D1
Authority
DE
Germany
Prior art keywords
methode
manufacturing
semiconductor device
stacked semiconductor
stacked
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282305016T
Other languages
English (en)
Inventor
Masaharu Toyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3277346D1 publication Critical patent/DE3277346D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/905—Electron beam

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Recrystallisation Techniques (AREA)
DE8282305016T 1981-09-25 1982-09-23 Methode of manufacturing a stacked semiconductor device Expired DE3277346D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56151484A JPS5853822A (ja) 1981-09-25 1981-09-25 積層半導体装置

Publications (1)

Publication Number Publication Date
DE3277346D1 true DE3277346D1 (en) 1987-10-22

Family

ID=15519506

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282305016T Expired DE3277346D1 (en) 1981-09-25 1982-09-23 Methode of manufacturing a stacked semiconductor device

Country Status (4)

Country Link
US (1) US4569700A (de)
EP (1) EP0076101B1 (de)
JP (1) JPS5853822A (de)
DE (1) DE3277346D1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5610782A (en) * 1979-07-06 1981-02-03 Nippon Texas Instr Kk Demodulating circuit for sound multiplex broadcast
JPS5890763A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp 半導体装置
JPS5892257A (ja) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp 半導体装置
JPS6014462A (ja) * 1983-07-05 1985-01-25 Oki Electric Ind Co Ltd 半導体メモリ素子
JPS60189217A (ja) * 1984-03-09 1985-09-26 Agency Of Ind Science & Technol 多層ｓｏｉ用シ−ド構造
JPS61121433A (ja) * 1984-11-19 1986-06-09 Sharp Corp 半導体基板
US4663831A (en) * 1985-10-08 1987-05-12 Motorola, Inc. Method of forming transistors with poly-sidewall contacts utilizing deposition of polycrystalline and insulating layers combined with selective etching and oxidation of said layers
KR900008647B1 (ko) * 1986-03-20 1990-11-26 후지쓰 가부시끼가이샤 3차원 집적회로와 그의 제조방법
AU588700B2 (en) * 1986-06-30 1989-09-21 Canon Kabushiki Kaisha Semiconductor device and method for producing the same
JPH0812906B2 (ja) * 1986-07-11 1996-02-07 キヤノン株式会社 光電変換装置の製造方法
US5045501A (en) * 1986-08-25 1991-09-03 Hughes Aircraft Company Method of forming an integrated circuit structure with multiple common planes
US4849371A (en) * 1986-12-22 1989-07-18 Motorola Inc. Monocrystalline semiconductor buried layers for electrical contacts to semiconductor devices
JPS6457836A (en) * 1987-08-27 1989-03-06 Fuotonikusu Kk Receiver
JPH02101767A (ja) * 1988-10-11 1990-04-13 Agency Of Ind Science & Technol 半導体装置
US5191405A (en) * 1988-12-23 1993-03-02 Matsushita Electric Industrial Co., Ltd. Three-dimensional stacked lsi
FR2645681B1 (fr) * 1989-04-07 1994-04-08 Thomson Csf Dispositif d'interconnexion verticale de pastilles de circuits integres et son procede de fabrication
DE4417916A1 (de) * 1994-05-24 1995-11-30 Telefunken Microelectron Verfahren zur Herstellung eines Bipolartransistors
US20060113596A1 (en) * 2004-12-01 2006-06-01 Samsung Electronics Co., Ltd. Single crystal substrate and method of fabricating the same
US7776718B2 (en) * 2007-06-25 2010-08-17 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor substrate with reduced gap size between single-crystalline layers

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1417088A (fr) * 1963-12-16 1965-11-05 Rca Corp Pastilles composites isolantes et semi-conductrices
DE1589705A1 (de) * 1967-11-15 1970-04-30 Itt Ind Gmbh Deutsche Mehrere elektrische Funktionsstufen enthaltende integrierte Schaltung
DE2832012A1 (de) * 1978-07-20 1980-01-31 Siemens Ag Verfahren zum herstellen einer dreidimensionalen integrierten schaltung
NL7810549A (nl) * 1978-10-23 1980-04-25 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
EP0020135A1 (de) * 1979-05-29 1980-12-10 Massachusetts Institute Of Technology Dreidimensionale Integration durch graphische Epitaxie
JPS5667923A (en) * 1979-11-07 1981-06-08 Toshiba Corp Preparation method of semiconductor system
US4323417A (en) * 1980-05-06 1982-04-06 Texas Instruments Incorporated Method of producing monocrystal on insulator
US4319954A (en) * 1981-02-27 1982-03-16 Rca Corporation Method of forming polycrystalline silicon lines and vias on a silicon substrate
JPS57155764A (en) * 1981-03-20 1982-09-25 Fujitsu Ltd Manufacture of semiconductor device
EP0073487B1 (de) * 1981-08-31 1988-07-20 Kabushiki Kaisha Toshiba Verfahren zur Herstellung einer dreidimensionalen Halbleitervorrichtung
JPS5861622A (ja) * 1981-10-09 1983-04-12 Hitachi Ltd 単結晶薄膜の製造方法
JPS59108313A (ja) * 1982-12-13 1984-06-22 Mitsubishi Electric Corp 半導体単結晶層の製造方法

Also Published As

Publication number Publication date
JPS5853822A (ja) 1983-03-30
EP0076101A3 (en) 1984-09-05
EP0076101B1 (de) 1987-09-16
US4569700A (en) 1986-02-11
EP0076101A2 (de) 1983-04-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee