DE3276677D1 - Device fabrication using gas-solid processes - Google Patents

Device fabrication using gas-solid processes

Info

Publication number
DE3276677D1
DE3276677D1 DE8282106362T DE3276677T DE3276677D1 DE 3276677 D1 DE3276677 D1 DE 3276677D1 DE 8282106362 T DE8282106362 T DE 8282106362T DE 3276677 T DE3276677 T DE 3276677T DE 3276677 D1 DE3276677 D1 DE 3276677D1
Authority
DE
Germany
Prior art keywords
gas
device fabrication
solid processes
processes
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282106362T
Other languages
German (de)
English (en)
Inventor
Vincent Michael Donnelly
Daniel Lawrence Flamm
Robert Frank Karlicek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of DE3276677D1 publication Critical patent/DE3276677D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64—Fluorescence; Phosphorescence
    • G01N21/6402—Atomic fluorescence; Laser induced fluorescence
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Drying Of Semiconductors (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
DE8282106362T 1981-07-17 1982-07-15 Device fabrication using gas-solid processes Expired DE3276677D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/284,468 US4394237A (en) 1981-07-17 1981-07-17 Spectroscopic monitoring of gas-solid processes

Publications (1)

Publication Number Publication Date
DE3276677D1 true DE3276677D1 (en) 1987-08-06

Family

ID=23090329

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282106362T Expired DE3276677D1 (en) 1981-07-17 1982-07-15 Device fabrication using gas-solid processes

Country Status (6)

Country Link
US (1) US4394237A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0070523B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5851520A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1194385A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3276677D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB2104650B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
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JPS58100740A (ja) * 1981-12-11 1983-06-15 Hitachi Ltd プラズマ分布モニタ
JPS58210634A (ja) * 1982-05-31 1983-12-07 Toshiba Corp 半導体装置の製造方法
JPS59179509A (ja) * 1983-03-29 1984-10-12 Toa Nenryo Kogyo Kk エチレン共重合体の製造方法
US4482424A (en) * 1983-05-06 1984-11-13 At&T Bell Laboratories Method for monitoring etching of resists by monitoring the flouresence of the unetched material
US4549807A (en) * 1983-10-07 1985-10-29 At&T Bell Laboratories Process for measuring fluorescence
US4654504A (en) * 1983-11-30 1987-03-31 Hewlett-Packard Company Water-cooled gas discharge detector
JPS60204626A (ja) * 1984-03-30 1985-10-16 Anelva Corp 酸化鉄薄膜の形成方法および装置
US4533449A (en) * 1984-04-16 1985-08-06 The Perkin-Elmer Corporation Rapid surface figuring by selective deposition
JPH0630339B2 (ja) * 1984-07-16 1994-04-20 新技術事業団 ＧａＡｓ単結晶の製造方法
GB2162207B (en) * 1984-07-26 1989-05-10 Japan Res Dev Corp Semiconductor crystal growth apparatus
US4670063A (en) * 1985-04-10 1987-06-02 Eaton Corporation Semiconductor processing technique with differentially fluxed radiation at incremental thicknesses
US4675072A (en) * 1986-06-25 1987-06-23 International Business Machines Corporation Trench etch endpoint detection by LIF
US4687539A (en) * 1986-10-29 1987-08-18 International Business Machines Corp. End point detection and control of laser induced dry chemical etching
US4713140A (en) * 1987-03-02 1987-12-15 International Business Machines Corporation Laser luminescence monitor for material thickness
JP2511668B2 (ja) * 1987-03-19 1996-07-03 東京エレクトロン株式会社 ベ−キング装置
FR2616269B1 (fr) * 1987-06-04 1990-11-09 Labo Electronique Physique Dispositif de test pour la mise en oeuvre d'un procede de realisation de dispositifs semiconducteurs
US4967152A (en) * 1988-03-11 1990-10-30 Ultra-Probe Apparatus including a focused UV light source for non-contact measurement and alteration of electrical properties of conductors
JPH0354824A (ja) * 1989-07-24 1991-03-08 Nec Corp 半導体加工方法と半導体加工装置
EP0416787B1 (en) * 1989-09-01 1995-05-10 AT&T Corp. Plasma processing of III-V semiconductors, controlled by photoluminescence spectroscopy
US5087815A (en) * 1989-11-08 1992-02-11 Schultz J Albert High resolution mass spectrometry of recoiled ions for isotopic and trace elemental analysis
DE9012816U1 (de) * 1990-09-07 1990-11-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eV, 8000 München Halbleiterfertigungs-Steuer- und/oder Meßvorrichtung
US5683538A (en) * 1994-12-23 1997-11-04 International Business Machines Corporation Control of etch selectivity
KR0144376B1 (ko) * 1995-03-22 1998-08-17 김주용 식각 부산물에 대한 모니터링 방법 및 그 장치
KR0152150B1 (ko) * 1995-08-31 1998-10-01 김광호 정수장치
US6649075B1 (en) 1996-07-23 2003-11-18 Applied Materials, Inc. Method and apparatus for measuring etch uniformity of a semiconductor wafer
US6547458B1 (en) * 1999-11-24 2003-04-15 Axcelis Technologies, Inc. Optimized optical system design for endpoint detection
TW524888B (en) * 2000-02-01 2003-03-21 Winbond Electronics Corp Optical temperature measurement as an in-situ monitor of etch rate
JP3844738B2 (ja) 2001-03-02 2006-11-15 ウォーターズ・インヴェストメンツ・リミテッド 蛍光検知器構造
US7821655B2 (en) * 2004-02-09 2010-10-26 Axcelis Technologies, Inc. In-situ absolute measurement process and apparatus for film thickness, film removal rate, and removal endpoint prediction
GB2441582A (en) * 2006-09-01 2008-03-12 Gencoa Ltd Process monitoring and control
JP4909929B2 (ja) * 2007-04-18 2012-04-04 パナソニック株式会社 分圧測定方法および分圧測定装置
DE102009059097B4 (de) * 2009-12-18 2011-09-01 Dtf Technology Gmbh Verfahren und Vorrichtung zur Auswertung des von einem Plasma emittierten Lichtes zur Regelung von plasmagestützten Vakuumprozessen
US8664153B1 (en) 2013-03-15 2014-03-04 Sociedad Oxidquimica Limitada Activated carbon as an adsorbent composition

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3654109A (en) * 1968-04-25 1972-04-04 Ibm Apparatus and method for measuring rate in flow processes
US3734620A (en) * 1971-04-01 1973-05-22 Ibm Multiple band atomic absorption apparatus for simultaneously measuring different physical parameters of a material
US4140078A (en) * 1974-03-16 1979-02-20 Leybold Heraeus Gmbh & Co. Kg Method and apparatus for regulating evaporating rate and layer build up in the production of thin layers
US4036167A (en) * 1976-01-30 1977-07-19 Inficon Leybold-Heraeus Inc. Apparatus for monitoring vacuum deposition processes
US4148612A (en) * 1976-02-19 1979-04-10 The United States Of America As Represented By The United States Department Of Energy Method and apparatus for detecting and measuring trace impurities in flowing gases
US4312732A (en) * 1976-08-31 1982-01-26 Bell Telephone Laboratories, Incorporated Method for the optical monitoring of plasma discharge processing operations
US4198261A (en) * 1977-12-05 1980-04-15 Gould Inc. Method for end point detection during plasma etching
US4166784A (en) * 1978-04-28 1979-09-04 Applied Films Lab, Inc. Feedback control for vacuum deposition apparatus
US4172020A (en) * 1978-05-24 1979-10-23 Gould Inc. Method and apparatus for monitoring and controlling sputter deposition processes
US4246060A (en) * 1979-01-02 1981-01-20 Motorola, Inc. Plasma development process controller
US4208240A (en) * 1979-01-26 1980-06-17 Gould Inc. Method and apparatus for controlling plasma etching
JPS55157233A (en) * 1979-05-28 1980-12-06 Hitachi Ltd Method and apparatus for monitoring etching
US4263088A (en) * 1979-06-25 1981-04-21 Motorola, Inc. Method for process control of a plasma reaction
US4281030A (en) * 1980-05-12 1981-07-28 Bell Telephone Laboratories, Incorporated Implantation of vaporized material on melted substrates

Also Published As

Publication number Publication date
GB2104650B (en) 1985-04-03
GB2104650A (en) 1983-03-09
EP0070523A3 (en) 1984-09-05
CA1194385A (en) 1985-10-01
US4394237A (en) 1983-07-19
JPH0225249B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-06-01
JPS5851520A (ja) 1983-03-26
EP0070523A2 (en) 1983-01-26
EP0070523B1 (en) 1987-07-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN

8339 Ceased/non-payment of the annual fee