GB2105908A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- GB2105908A GB2105908A GB08228266A GB8228266A GB2105908A GB 2105908 A GB2105908 A GB 2105908A GB 08228266 A GB08228266 A GB 08228266A GB 8228266 A GB8228266 A GB 8228266A GB 2105908 A GB2105908 A GB 2105908A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0605—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits made of compound material, e.g. AIIIBV
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1606381A JPS57130476A (en) | 1981-02-05 | 1981-02-05 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
GB2105908A true GB2105908A (en) | 1983-03-30 |
Family
ID=11906111
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08228266A Withdrawn GB2105908A (en) | 1981-02-05 | 1982-02-04 | Semiconductor device |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0071648A4 (en) |
JP (1) | JPS57130476A (en) |
DE (1) | DE3231668T (en) |
GB (1) | GB2105908A (en) |
NL (1) | NL8220025A (en) |
WO (1) | WO1982002799A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0669101B2 (en) * | 1983-08-25 | 1994-08-31 | 松下電子工業株式会社 | Method for manufacturing semiconductor device |
JPS6237974A (en) * | 1985-08-13 | 1987-02-18 | Matsushita Electronics Corp | Semiconductor device |
JP3255186B2 (en) * | 1992-08-24 | 2002-02-12 | ソニー株式会社 | Protection device and solid-state image sensor |
US5399893A (en) * | 1993-08-24 | 1995-03-21 | Motorola, Inc. | Diode protected semiconductor device |
US9276097B2 (en) | 2012-03-30 | 2016-03-01 | Infineon Technologies Austria Ag | Gate overvoltage protection for compound semiconductor transistors |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1170705A (en) * | 1967-02-27 | 1969-11-12 | Hitachi Ltd | An Insulated Gate Type Field Effect Semiconductor Device having a Breakdown Preventing Circuit Device and a method of manufacturing the same |
US3728591A (en) * | 1971-09-03 | 1973-04-17 | Rca Corp | Gate protective device for insulated gate field-effect transistors |
JPS52146185A (en) * | 1976-05-28 | 1977-12-05 | Fujitsu Ltd | Semiconductor integrated circuit |
JPS5348487A (en) * | 1976-10-14 | 1978-05-01 | Fujitsu Ltd | Semiconductor device |
JPS5793579A (en) * | 1980-12-03 | 1982-06-10 | Toshiba Corp | Compound semiconductor device |
-
1981
- 1981-02-05 JP JP1606381A patent/JPS57130476A/en active Pending
-
1982
- 1982-02-04 EP EP19820900384 patent/EP0071648A4/en not_active Withdrawn
- 1982-02-04 DE DE19823231668 patent/DE3231668T/en not_active Withdrawn
- 1982-02-04 NL NL8220025A patent/NL8220025A/en not_active Application Discontinuation
- 1982-02-04 WO PCT/JP1982/000033 patent/WO1982002799A1/en not_active Application Discontinuation
- 1982-02-04 GB GB08228266A patent/GB2105908A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JPS57130476A (en) | 1982-08-12 |
EP0071648A1 (en) | 1983-02-16 |
NL8220025A (en) | 1983-01-03 |
DE3231668T (en) | 1983-02-10 |
EP0071648A4 (en) | 1985-02-18 |
WO1982002799A1 (en) | 1982-08-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |