DE3273066D1 - Electrically insulating silicon carbide sintered body - Google Patents

Electrically insulating silicon carbide sintered body

Info

Publication number
DE3273066D1
DE3273066D1 DE8282306475T DE3273066T DE3273066D1 DE 3273066 D1 DE3273066 D1 DE 3273066D1 DE 8282306475 T DE8282306475 T DE 8282306475T DE 3273066 T DE3273066 T DE 3273066T DE 3273066 D1 DE3273066 D1 DE 3273066D1
Authority
DE
Germany
Prior art keywords
silicon carbide
sintered body
electrically insulating
carbide sintered
insulating silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282306475T
Other languages
German (de)
English (en)
Inventor
Satoru Ogihara
Yukio Takeda
Kunihiro Maeda
Kousuke Nakamura
Mitsuru Ura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3273066D1 publication Critical patent/DE3273066D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/575—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
    • H10W70/692—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H10W72/552—
    • H10W72/884—
    • H10W90/754—
    • H10W90/756—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Inorganic Insulating Materials (AREA)
DE8282306475T 1981-12-07 1982-12-06 Electrically insulating silicon carbide sintered body Expired DE3273066D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56197133A JPS5899172A (ja) 1981-12-07 1981-12-07 電気絶縁基板

Publications (1)

Publication Number Publication Date
DE3273066D1 true DE3273066D1 (en) 1986-10-09

Family

ID=16369295

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282306475T Expired DE3273066D1 (en) 1981-12-07 1982-12-06 Electrically insulating silicon carbide sintered body

Country Status (5)

Country Link
US (1) US4561010A (cg-RX-API-DMAC10.html)
EP (1) EP0081365B1 (cg-RX-API-DMAC10.html)
JP (1) JPS5899172A (cg-RX-API-DMAC10.html)
KR (1) KR840002337A (cg-RX-API-DMAC10.html)
DE (1) DE3273066D1 (cg-RX-API-DMAC10.html)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101442A (ja) * 1981-12-11 1983-06-16 Hitachi Ltd 電気的装置用基板
JPS5921579A (ja) * 1982-07-29 1984-02-03 大森　守 炭化珪素焼結成形体とその製造方法
JPS6066843A (ja) * 1983-09-22 1985-04-17 Hitachi Ltd 集積回路パツケ−ジ
DE3675321D1 (de) * 1985-08-16 1990-12-06 Dai Ichi Seiko Co Ltd Halbleiteranordnung mit packung vom steckerstifttyp.
JPS6271271A (ja) * 1985-09-24 1987-04-01 Sharp Corp 炭化珪素半導体の電極構造
US4701427A (en) * 1985-10-17 1987-10-20 Stemcor Corporation Sintered silicon carbide ceramic body of high electrical resistivity
DE3621450A1 (de) * 1986-06-26 1988-01-14 Kempten Elektroschmelz Gmbh Elektrisch isolierende substratwerkstoffe aus polykristallinem siliciumcarbid und verfahren zu ihrer herstellung durch isostatisches heisspressen
JPH0719898B2 (ja) * 1987-01-30 1995-03-06 日本電気株式会社 光電気集積回路
JP2772001B2 (ja) * 1988-11-28 1998-07-02 株式会社日立製作所 半導体装置
US5323025A (en) * 1989-05-18 1994-06-21 Murata Mfg. Co., Ltd. Pyroelectric IR-sensor having a low thermal conductive ceramic substrate
US5109268A (en) * 1989-12-29 1992-04-28 Sgs-Thomson Microelectronics, Inc. Rf transistor package and mounting pad
DE4110858A1 (de) * 1991-04-04 1992-10-08 Wild Heerbrugg Ag Zweiachsiger neigungsmesser
JPH05308107A (ja) * 1991-07-01 1993-11-19 Sumitomo Electric Ind Ltd 半導体装置及びその製作方法
JPH05136304A (ja) * 1991-11-14 1993-06-01 Mitsubishi Electric Corp 半導体モジユール及びそれを用いたパワー制御装置
JP2677735B2 (ja) * 1992-05-22 1997-11-17 三菱電機株式会社 混成集積回路装置
JP3662955B2 (ja) * 1994-09-16 2005-06-22 株式会社東芝 回路基板および回路基板の製造方法
US5897341A (en) * 1998-07-02 1999-04-27 Fujitsu Limited Diffusion bonded interconnect
WO2002018297A2 (de) * 2000-09-02 2002-03-07 Andreas Roosen Verfahren zur herstellung eines hochohmigen siliziumcarbid sinterkörpers
KR100477184B1 (ko) * 2002-05-17 2005-03-17 휴먼사이언스테크놀러지(주) 티타늄 이온박막을 갖는 탄화규소 소결체의 제조방법
JP2004228352A (ja) * 2003-01-23 2004-08-12 Mitsubishi Electric Corp 電力半導体装置
JP2005191148A (ja) * 2003-12-24 2005-07-14 Sanyo Electric Co Ltd 混成集積回路装置およびその製造方法
US7700202B2 (en) * 2006-02-16 2010-04-20 Alliant Techsystems Inc. Precursor formulation of a silicon carbide material
US7564129B2 (en) * 2007-03-30 2009-07-21 Nichicon Corporation Power semiconductor module, and power semiconductor device having the module mounted therein
US20100123140A1 (en) * 2008-11-20 2010-05-20 General Electric Company SiC SUBSTRATES, SEMICONDUCTOR DEVICES BASED UPON THE SAME AND METHODS FOR THEIR MANUFACTURE
DE102009000192A1 (de) * 2009-01-14 2010-07-15 Robert Bosch Gmbh Sinterwerkstoff, Sinterverbindung sowie Verfahren zum Herstellen eines Sinterverbindung
CN114582850A (zh) * 2020-11-30 2022-06-03 上海华为技术有限公司 一种电子元件和电子设备

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4172109A (en) * 1976-11-26 1979-10-23 The Carborundum Company Pressureless sintering beryllium containing silicon carbide powder composition
US4209474A (en) * 1977-08-31 1980-06-24 General Electric Company Process for preparing semiconducting silicon carbide sintered body
JPS5930671B2 (ja) * 1978-12-15 1984-07-28 株式会社日立製作所 焼結体製造用炭化珪素粉末組成物
JPS55116667A (en) * 1979-02-28 1980-09-08 Asahi Glass Co Ltd Silicon carbide sintered body
JPS55144472A (en) * 1979-04-24 1980-11-11 Atomic Energy Authority Uk Silicon carbide and its manufacture
JPS55143042A (en) * 1979-04-25 1980-11-08 Hitachi Ltd Semiconductor device
DE3064598D1 (en) * 1979-11-05 1983-09-22 Hitachi Ltd Electrically insulating substrate and a method of making such a substrate
DE3044162A1 (de) * 1980-11-24 1982-06-03 Annawerk Keramische Betriebe GmbH, 8633 Rödental Polykristalliner formkoerper aus siliziumkarbid und verfahren zu seiner herstellung
JPS57160970A (en) * 1981-03-27 1982-10-04 Omori Mamoru Silicon carbide sintered formed body and manufacture
JPS5891146A (ja) * 1981-11-24 1983-05-31 Kyocera Corp 炭化珪素質焼結体

Also Published As

Publication number Publication date
JPS5899172A (ja) 1983-06-13
JPS631267B2 (cg-RX-API-DMAC10.html) 1988-01-12
KR840002337A (ko) 1984-06-25
EP0081365B1 (en) 1986-09-03
US4561010A (en) 1985-12-24
EP0081365A1 (en) 1983-06-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBEL-HOPF, U., DIPL.-CHEM. DR.RER.NAT. GROENING, H., DIPL.-ING., PAT.-ANWAELTE, 8000 MUENCHEN

8339 Ceased/non-payment of the annual fee