DE3268385D1 - Method for lpcvd co-deposition of metal and silicon to form metal silicide - Google Patents

Method for lpcvd co-deposition of metal and silicon to form metal silicide

Info

Publication number
DE3268385D1
DE3268385D1 DE8282401171T DE3268385T DE3268385D1 DE 3268385 D1 DE3268385 D1 DE 3268385D1 DE 8282401171 T DE8282401171 T DE 8282401171T DE 3268385 T DE3268385 T DE 3268385T DE 3268385 D1 DE3268385 D1 DE 3268385D1
Authority
DE
Germany
Prior art keywords
metal
lpcvd
deposition
silicon
metal silicide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282401171T
Other languages
English (en)
Inventor
William I Lehrer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Application granted granted Critical
Publication of DE3268385D1 publication Critical patent/DE3268385D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Chemical Vapour Deposition (AREA)
DE8282401171T 1981-07-13 1982-06-25 Method for lpcvd co-deposition of metal and silicon to form metal silicide Expired DE3268385D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/282,768 US4359490A (en) 1981-07-13 1981-07-13 Method for LPCVD co-deposition of metal and silicon to form metal silicide

Publications (1)

Publication Number Publication Date
DE3268385D1 true DE3268385D1 (en) 1986-02-20

Family

ID=23083045

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282401171T Expired DE3268385D1 (en) 1981-07-13 1982-06-25 Method for lpcvd co-deposition of metal and silicon to form metal silicide

Country Status (5)

Country Link
US (1) US4359490A (de)
EP (1) EP0070751B1 (de)
JP (1) JPS5817615A (de)
CA (1) CA1187351A (de)
DE (1) DE3268385D1 (de)

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US4419385A (en) * 1981-09-24 1983-12-06 Hughes Aircraft Company Low temperature process for depositing an oxide dielectric layer on a conductive surface and multilayer structures formed thereby
DE3211752C2 (de) * 1982-03-30 1985-09-26 Siemens AG, 1000 Berlin und 8000 München Verfahren zum selektiven Abscheiden von aus Siliziden hochschmelzender Metalle bestehenden Schichtstrukturen auf im wesentlichen aus Silizium bestehenden Substraten und deren Verwendung
DE3211761A1 (de) * 1982-03-30 1983-10-06 Siemens Ag Verfahren zum herstellen von integrierten mos-feldeffekttransistorschaltungen in siliziumgate-technologie mit silizid beschichteten diffusionsgebieten als niederohmige leiterbahnen
JPS6042823A (ja) * 1983-08-19 1985-03-07 Toshiba Corp 薄膜形成方法
US4557943A (en) * 1983-10-31 1985-12-10 Advanced Semiconductor Materials America, Inc. Metal-silicide deposition using plasma-enhanced chemical vapor deposition
US4851295A (en) * 1984-03-16 1989-07-25 Genus, Inc. Low resistivity tungsten silicon composite film
US4629635A (en) * 1984-03-16 1986-12-16 Genus, Inc. Process for depositing a low resistivity tungsten silicon composite film on a substrate
US4504521A (en) * 1984-03-22 1985-03-12 Rca Corporation LPCVD Deposition of tantalum silicide
DE3413064A1 (de) * 1984-04-06 1985-10-31 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von metallsilizidschichten durch abscheidung aus der gasphase bei vermindertem druck und deren verwendung
US4816643A (en) * 1985-03-15 1989-03-28 Allied-Signal Inc. Glow plug having a metal silicide resistive film heater
JPS61274345A (ja) * 1985-05-29 1986-12-04 Toshiba Corp 半導体装置の製造方法
US4668530A (en) * 1985-07-23 1987-05-26 Massachusetts Institute Of Technology Low pressure chemical vapor deposition of refractory metal silicides
JPH0817159B2 (ja) * 1985-08-15 1996-02-21 キヤノン株式会社 堆積膜の形成方法
US4619038A (en) * 1985-08-15 1986-10-28 Motorola, Inc. Selective titanium silicide formation
US4837048A (en) * 1985-10-24 1989-06-06 Canon Kabushiki Kaisha Method for forming a deposited film
US4709655A (en) * 1985-12-03 1987-12-01 Varian Associates, Inc. Chemical vapor deposition apparatus
US4796562A (en) * 1985-12-03 1989-01-10 Varian Associates, Inc. Rapid thermal cvd apparatus
JPH0645885B2 (ja) * 1985-12-16 1994-06-15 キヤノン株式会社 堆積膜形成法
JPH0645888B2 (ja) * 1985-12-17 1994-06-15 キヤノン株式会社 堆積膜形成法
JPH0645890B2 (ja) * 1985-12-18 1994-06-15 キヤノン株式会社 堆積膜形成法
JPS62142778A (ja) * 1985-12-18 1987-06-26 Canon Inc 堆積膜形成法
US5160543A (en) * 1985-12-20 1992-11-03 Canon Kabushiki Kaisha Device for forming a deposited film
JPH0651906B2 (ja) * 1985-12-25 1994-07-06 キヤノン株式会社 堆積膜形成法
JPH0746729B2 (ja) * 1985-12-26 1995-05-17 キヤノン株式会社 薄膜トランジスタの製造方法
US4766006A (en) * 1986-05-15 1988-08-23 Varian Associates, Inc. Low pressure chemical vapor deposition of metal silicide
US4968644A (en) * 1986-06-16 1990-11-06 At&T Bell Laboratories Method for fabricating devices and devices formed thereby
US4800105A (en) * 1986-07-22 1989-01-24 Nihon Shinku Gijutsu Kabushiki Kaisha Method of forming a thin film by chemical vapor deposition
US4684542A (en) * 1986-08-11 1987-08-04 International Business Machines Corporation Low pressure chemical vapor deposition of tungsten silicide
US4834023A (en) * 1986-12-19 1989-05-30 Canon Kabushiki Kaisha Apparatus for forming deposited film
NL8700820A (nl) * 1987-04-08 1988-11-01 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
US4814294A (en) * 1987-07-30 1989-03-21 Allied-Signal Inc. Method of growing cobalt silicide films by chemical vapor deposition
US5851871A (en) * 1987-12-23 1998-12-22 Sgs-Thomson Microelectronics, S.R.L. Process for manufacturing integrated capacitors in MOS technology
US4992305A (en) * 1988-06-22 1991-02-12 Georgia Tech Research Corporation Chemical vapor deposition of transistion metals
US4915988A (en) * 1988-06-22 1990-04-10 Georgia Tech Research Corporation Chemical vapor deposition of group IIA metals and precursors therefor
EP0349695A1 (de) * 1988-07-08 1990-01-10 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Verfahren zur Metallabscheidung aus Siliziumsubstrat
US4957777A (en) * 1988-07-28 1990-09-18 Massachusetts Institute Of Technology Very low pressure chemical vapor deposition process for deposition of titanium silicide films
KR930004295B1 (ko) * 1988-12-24 1993-05-22 삼성전자 주식회사 Vlsi 장치의 n+ 및 p+ 저항영역에 저저항 접속방법
JPH02185973A (ja) * 1989-01-13 1990-07-20 Tokyo Electron Ltd 金属シリサイド膜の形成方法
NL8900469A (nl) * 1989-02-24 1990-09-17 Imec Inter Uni Micro Electr Werkwijze en toestel voor het aanbrengen van epitaxiaal silicium en silicides.
US5300322A (en) * 1992-03-10 1994-04-05 Martin Marietta Energy Systems, Inc. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride
JP3064769B2 (ja) * 1992-11-21 2000-07-12 アルバック成膜株式会社 位相シフトマスクおよびその製造方法ならびにその位相シフトマスクを用いた露光方法
US5674647A (en) * 1992-11-21 1997-10-07 Ulvac Coating Corporation Phase shift mask and manufacturing method thereof and exposure method using phase shift mask
US5976976A (en) 1997-08-21 1999-11-02 Micron Technology, Inc. Method of forming titanium silicide and titanium by chemical vapor deposition
TW396646B (en) 1997-09-11 2000-07-01 Lg Semicon Co Ltd Manufacturing method of semiconductor devices
KR100425147B1 (ko) * 1997-09-29 2004-05-17 주식회사 하이닉스반도체 반도체소자의제조방법
US6143362A (en) * 1998-02-25 2000-11-07 Micron Technology, Inc. Chemical vapor deposition of titanium
US6284316B1 (en) 1998-02-25 2001-09-04 Micron Technology, Inc. Chemical vapor deposition of titanium
US6251777B1 (en) 1999-03-05 2001-06-26 Taiwan Semiconductor Manufacturing Company Thermal annealing method for forming metal silicide layer
US6743721B2 (en) * 2002-06-10 2004-06-01 United Microelectronics Corp. Method and system for making cobalt silicide
WO2010108065A1 (en) * 2009-03-19 2010-09-23 Ae Polysilicon Corporation Silicide - coated metal surfaces and methods of utilizing same
US20100266762A1 (en) * 2009-04-20 2010-10-21 Ben Fieselmann Processes and an apparatus for manufacturing high purity polysilicon
JP2012523963A (ja) * 2009-04-20 2012-10-11 エーイー ポリシリコン コーポレーション ケイ化物がコーティングされた金属表面を有する反応器
TWI454309B (zh) * 2009-04-20 2014-10-01 Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd 用於將反應排出氣體冷卻之方法及系統
DE102013212406A1 (de) 2013-06-27 2014-12-31 Wacker Chemie Ag Verfahren zum Betreiben eines Wirbelschichtreaktors
US10157995B2 (en) * 2013-08-09 2018-12-18 Taiwan Semiconductor Manufacturing Company, Ltd. Integrating junction formation of transistors with contact formation

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3381182A (en) * 1964-10-19 1968-04-30 Philco Ford Corp Microcircuits having buried conductive layers
US3540920A (en) * 1967-08-24 1970-11-17 Texas Instruments Inc Process of simultaneously vapor depositing silicides of chromium and titanium
GB1399163A (en) * 1972-11-08 1975-06-25 Ferranti Ltd Methods of manufacturing semiconductor devices
IN140056B (de) * 1973-11-01 1976-09-04 Rca Corp
US4180596A (en) * 1977-06-30 1979-12-25 International Business Machines Corporation Method for providing a metal silicide layer on a substrate
GB2030180B (en) * 1978-01-26 1983-05-25 Secr Defence Vapour deposition of metal in plasma discharge
US4218291A (en) * 1978-02-28 1980-08-19 Vlsi Technology Research Association Process for forming metal and metal silicide films
US4239819A (en) * 1978-12-11 1980-12-16 Chemetal Corporation Deposition method and products
US4276557A (en) * 1978-12-29 1981-06-30 Bell Telephone Laboratories, Incorporated Integrated semiconductor circuit structure and method for making it
US4329706A (en) * 1979-03-01 1982-05-11 International Business Machines Corporation Doped polysilicon silicide semiconductor integrated circuit interconnections
JPS587821A (ja) * 1981-07-06 1983-01-17 Hitachi Ltd 金属とシリコンとの化合物層の形成方法

Also Published As

Publication number Publication date
CA1187351A (en) 1985-05-21
EP0070751B1 (de) 1986-01-08
EP0070751A1 (de) 1983-01-26
JPS5817615A (ja) 1983-02-01
US4359490A (en) 1982-11-16

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

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