DE3243689A1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE3243689A1
DE3243689A1 DE19823243689 DE3243689A DE3243689A1 DE 3243689 A1 DE3243689 A1 DE 3243689A1 DE 19823243689 DE19823243689 DE 19823243689 DE 3243689 A DE3243689 A DE 3243689A DE 3243689 A1 DE3243689 A1 DE 3243689A1
Authority
DE
Germany
Prior art keywords
semiconductor device
soldering
solder
base plate
outer container
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19823243689
Other languages
German (de)
English (en)
Other versions
DE3243689C2 (https=
Inventor
Shinobu Itami Hyogo Takahama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3243689A1 publication Critical patent/DE3243689A1/de
Application granted granted Critical
Publication of DE3243689C2 publication Critical patent/DE3243689C2/de
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68Shapes or dispositions thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10Containers or parts thereof
    • H10W76/12Containers or parts thereof characterised by their shape
    • H10W76/15Containers comprising an insulating or insulated base
    • H10W76/157Containers comprising an insulating or insulated base having interconnections parallel to the insulating or insulated base
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/40Fillings or auxiliary members in containers, e.g. centering rings
    • H10W76/42Fillings
    • H10W76/47Solid or gel fillings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/381Auxiliary members
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/541Dispositions of bond wires
    • H10W72/547Dispositions of multiple bond wires
    • H10W72/5475Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49144Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49147Assembling terminal to base
    • Y10T29/49149Assembling terminal to base by metal fusion bonding

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)
DE19823243689 1981-11-30 1982-11-25 Halbleitervorrichtung Granted DE3243689A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56194698A JPS5893358A (ja) 1981-11-30 1981-11-30 半導体装置

Publications (2)

Publication Number Publication Date
DE3243689A1 true DE3243689A1 (de) 1983-06-30
DE3243689C2 DE3243689C2 (https=) 1987-12-23

Family

ID=16328778

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823243689 Granted DE3243689A1 (de) 1981-11-30 1982-11-25 Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US4677741A (https=)
JP (1) JPS5893358A (https=)
DE (1) DE3243689A1 (https=)
GB (1) GB2111746B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235658A (ja) * 1985-08-09 1987-02-16 Fuji Electric Co Ltd 半導体装置
US4931906A (en) * 1988-03-25 1990-06-05 Unitrode Corporation Hermetically sealed, surface mountable component and carrier for semiconductor devices
US5182628A (en) * 1989-06-28 1993-01-26 Hitachi, Ltd. Semiconductor device having particular solder interconnection arrangement
US5285690A (en) * 1992-01-24 1994-02-15 The Foxboro Company Pressure sensor having a laminated substrate
US5313091A (en) * 1992-09-28 1994-05-17 Sundstrand Corporation Package for a high power electrical component
US5297001A (en) * 1992-10-08 1994-03-22 Sundstrand Corporation High power semiconductor assembly
KR100322177B1 (ko) 1993-12-27 2002-05-13 이누이 도모지 내연기관용점화장치
DE10221857A1 (de) * 2002-05-16 2003-11-27 Osram Opto Semiconductors Gmbh Verfahren zum Befestigen eines Halbleiterchips in einem Kunststoffgehäusekörper, optoelektronisches Halbleiterbauelement und Verfahren zu dessen Herstellung
US7209366B2 (en) * 2004-03-19 2007-04-24 Intel Corporation Delivery regions for power, ground and I/O signal paths in an IC package
DE102006022254B4 (de) * 2006-05-11 2008-12-11 Infineon Technologies Ag Halbleiterbauteil mit in Kunststoffgehäusemasse eingebetteten Halbleiterbauteilkomponenten, Anordnung für eine Mehrzahl von Halbleiterbauteilen und Verfahren zur Herstellung von Halbleiterbauteilen
US8049323B2 (en) * 2007-02-16 2011-11-01 Taiwan Semiconductor Manufacturing Co., Ltd. Chip holder with wafer level redistribution layer
CN103094129B (zh) * 2011-10-28 2016-04-06 无锡华润安盛科技有限公司 一种半导体器件封装工艺
CN103311133B (zh) * 2013-05-20 2015-11-04 临海市志鼎电子科技有限公司 一种功率半导体模块焊接前倒装工艺

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1231811B (de) * 1962-04-06 1967-01-05 Bosch Gmbh Robert Halbleiteranordnung
DE1564954A1 (de) * 1965-12-22 1970-09-17 Texas Instruments Inc Sockel fuer Halbleitervorrichtungen und Verfahren zu seiner Herstellung
DE2203998A1 (de) * 1971-01-26 1972-08-10 Minnesota Mining & Mfg Hermetisch verschlossene Baueinheit für Leistungshalbleiter bzw. Halbleiterschaltkreise
DE2234461A1 (de) * 1971-11-15 1973-05-24 Du Pont Metallisierungsmasse und verfahren zum metallisieren einer vertiefung in halbleiterpackungen sowie das dabei erhaltene produkt
US4117508A (en) * 1977-03-21 1978-09-26 General Electric Company Pressurizable semiconductor pellet assembly
DE3030763A1 (de) * 1979-08-17 1981-03-26 Amdahl Corp., Sunnyvale, Calif. Packung fuer eine integrierte schaltung in plaettchenform
DE2230863C2 (de) * 1972-06-23 1981-10-08 Intersil Inc., Cupertino, Calif. Gehäuse für ein Halbleiterelement
DE3028178A1 (de) * 1980-07-25 1982-02-25 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungshalbleiter-modul

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2921245A (en) * 1958-10-08 1960-01-12 Int Rectifier Corp Hermetically sealed junction means
US3223903A (en) * 1961-02-24 1965-12-14 Hughes Aircraft Co Point contact semiconductor device with a lead having low effective ratio of length to diameter
US3141226A (en) * 1961-09-27 1964-07-21 Hughes Aircraft Co Semiconductor electrode attachment
US3241011A (en) * 1962-12-26 1966-03-15 Hughes Aircraft Co Silicon bonding technology
JPS4810904B1 (https=) * 1969-03-12 1973-04-09
US3964155A (en) * 1972-02-23 1976-06-22 The United States Of America As Represented By The Secretary Of The Navy Method of planar mounting of silicon solar cells
US3908185A (en) * 1974-03-06 1975-09-23 Rca Corp High frequency semiconductor device having improved metallized patterns
JPS5272170A (en) * 1975-12-12 1977-06-16 Nec Corp Package for semiconductor elements
JPS5336468A (en) * 1976-09-17 1978-04-04 Hitachi Ltd Package for integrated circuit
US4176443A (en) * 1977-03-08 1979-12-04 Sgs-Ates Componenti Elettronici S.P.A. Method of connecting semiconductor structure to external circuits
JPS5450269A (en) * 1977-09-28 1979-04-20 Nec Home Electronics Ltd Semiconductor device
US4445274A (en) * 1977-12-23 1984-05-01 Ngk Insulators, Ltd. Method of manufacturing a ceramic structural body
JPS54140468A (en) * 1978-04-24 1979-10-31 Hitachi Ltd Glass sealing package type device and its manufacture
JPS5568661A (en) * 1978-11-17 1980-05-23 Hitachi Ltd Structure for mounting power transistor

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1231811B (de) * 1962-04-06 1967-01-05 Bosch Gmbh Robert Halbleiteranordnung
DE1564954A1 (de) * 1965-12-22 1970-09-17 Texas Instruments Inc Sockel fuer Halbleitervorrichtungen und Verfahren zu seiner Herstellung
DE2203998A1 (de) * 1971-01-26 1972-08-10 Minnesota Mining & Mfg Hermetisch verschlossene Baueinheit für Leistungshalbleiter bzw. Halbleiterschaltkreise
DE2234461A1 (de) * 1971-11-15 1973-05-24 Du Pont Metallisierungsmasse und verfahren zum metallisieren einer vertiefung in halbleiterpackungen sowie das dabei erhaltene produkt
DE2230863C2 (de) * 1972-06-23 1981-10-08 Intersil Inc., Cupertino, Calif. Gehäuse für ein Halbleiterelement
US4117508A (en) * 1977-03-21 1978-09-26 General Electric Company Pressurizable semiconductor pellet assembly
DE3030763A1 (de) * 1979-08-17 1981-03-26 Amdahl Corp., Sunnyvale, Calif. Packung fuer eine integrierte schaltung in plaettchenform
DE3028178A1 (de) * 1980-07-25 1982-02-25 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungshalbleiter-modul

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US-Z.: IBM Technical Disclosure Bulletin, Vol. 14, April 1972, Nr. 11, S. 3332 *

Also Published As

Publication number Publication date
GB2111746B (en) 1985-09-25
JPS5893358A (ja) 1983-06-03
US4677741A (en) 1987-07-07
GB2111746A (en) 1983-07-06
DE3243689C2 (https=) 1987-12-23
JPS6146061B2 (https=) 1986-10-11

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Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee