DE3242921A1 - Verfahren zum aufbringen einer schicht eines naszierenden oxids und nach dem verfahren hergestelltes halbleiterelement - Google Patents

Verfahren zum aufbringen einer schicht eines naszierenden oxids und nach dem verfahren hergestelltes halbleiterelement

Info

Publication number
DE3242921A1
DE3242921A1 DE19823242921 DE3242921A DE3242921A1 DE 3242921 A1 DE3242921 A1 DE 3242921A1 DE 19823242921 DE19823242921 DE 19823242921 DE 3242921 A DE3242921 A DE 3242921A DE 3242921 A1 DE3242921 A1 DE 3242921A1
Authority
DE
Germany
Prior art keywords
oxygen
substrate
nascent
oxide
radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19823242921
Other languages
German (de)
English (en)
Inventor
John W. Malibu Calif. Peters
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of DE3242921A1 publication Critical patent/DE3242921A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6312—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group III-V semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6338—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Formation Of Insulating Films (AREA)
DE19823242921 1981-11-23 1982-11-20 Verfahren zum aufbringen einer schicht eines naszierenden oxids und nach dem verfahren hergestelltes halbleiterelement Withdrawn DE3242921A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32378081A 1981-11-23 1981-11-23

Publications (1)

Publication Number Publication Date
DE3242921A1 true DE3242921A1 (de) 1983-08-04

Family

ID=23260697

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823242921 Withdrawn DE3242921A1 (de) 1981-11-23 1982-11-20 Verfahren zum aufbringen einer schicht eines naszierenden oxids und nach dem verfahren hergestelltes halbleiterelement

Country Status (5)

Country Link
JP (1) JPS58155725A (https=)
DE (1) DE3242921A1 (https=)
FR (1) FR2517121A1 (https=)
GB (1) GB2111037B (https=)
NL (1) NL8204475A (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111333A (ja) * 1982-12-09 1984-06-27 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション ＳｉＯ領域をＳｉＯ↓２領域に変換してＳｉＯ↓２領を形成する方法
WO1986005320A1 (en) * 1985-02-28 1986-09-12 Sony Corporation Method and system for fabricating insulating layer on semiconductor substrate surface
DE3545242A1 (de) * 1985-12-20 1987-06-25 Licentia Gmbh Strukturierter halbleiterkoerper
US5178682A (en) * 1988-06-21 1993-01-12 Mitsubishi Denki Kabushiki Kaisha Method for forming a thin layer on a semiconductor substrate and apparatus therefor
JPH01319944A (ja) * 1988-06-21 1989-12-26 Mitsubishi Electric Corp 半導体基板表面に薄膜を形成する方法およびその装置
FR2635915B1 (fr) * 1988-08-30 1992-04-30 Loualiche Slimane Procede de fabrication d'une couche mince d'oxyde par voie seche sur un materiau iii-v, couche d'oxyde obtenue par ce procede et application a une diode schottky
US7892404B2 (en) * 2004-05-21 2011-02-22 Mitsubishi Gas Chemical Company, Inc. Method for oxidizing substance and oxidation apparatus therefor
JP6501486B2 (ja) * 2014-10-27 2019-04-17 学校法人東海大学 滅菌装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3718503A (en) * 1971-07-14 1973-02-27 Us Army Method of forming a diffusion mask barrier on a silicon substrate
DE2155849C3 (de) * 1971-11-10 1979-07-26 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Verfahren zur Herstellung eines stabilisierenden und/oder isolierenden Überzuges auf Halbleiteroberflächen
EP0030798B1 (en) * 1979-12-17 1983-12-28 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition

Also Published As

Publication number Publication date
GB2111037B (en) 1984-10-17
GB2111037A (en) 1983-06-29
JPH0436456B2 (https=) 1992-06-16
FR2517121A1 (fr) 1983-05-27
NL8204475A (nl) 1983-06-16
JPS58155725A (ja) 1983-09-16

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Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: KUHNEN, R., DIPL.-ING., 8050 FREISING LUDERSCHMIDT

8128 New person/name/address of the agent

Representative=s name: KUHNEN, R., DIPL.-ING. WACKER, P., DIPL.-ING. DIPL

8127 New person/name/address of the applicant

Owner name: HUGHES AIRCRAFT CO., LOS ANGELES, CALIF., US

8139 Disposal/non-payment of the annual fee