NL8204475A - Werkwijze voor het bij lage temperatuur en ladingvrij vormen van natieve oxidelagen. - Google Patents
Werkwijze voor het bij lage temperatuur en ladingvrij vormen van natieve oxidelagen. Download PDFInfo
- Publication number
- NL8204475A NL8204475A NL8204475A NL8204475A NL8204475A NL 8204475 A NL8204475 A NL 8204475A NL 8204475 A NL8204475 A NL 8204475A NL 8204475 A NL8204475 A NL 8204475A NL 8204475 A NL8204475 A NL 8204475A
- Authority
- NL
- Netherlands
- Prior art keywords
- native oxide
- substrate
- oxygen
- oxygen atoms
- radiation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6312—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group III-V semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6328—Deposition from the gas or vapour phase
- H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H10P14/6338—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition the reactions being activated by other means than plasma or thermal, e.g. photo-CVD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
- H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/69—Inorganic materials
- H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
- H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
- H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
Landscapes
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US32378081A | 1981-11-23 | 1981-11-23 | |
| US32378081 | 1981-11-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8204475A true NL8204475A (nl) | 1983-06-16 |
Family
ID=23260697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8204475A NL8204475A (nl) | 1981-11-23 | 1982-11-18 | Werkwijze voor het bij lage temperatuur en ladingvrij vormen van natieve oxidelagen. |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS58155725A (https=) |
| DE (1) | DE3242921A1 (https=) |
| FR (1) | FR2517121A1 (https=) |
| GB (1) | GB2111037B (https=) |
| NL (1) | NL8204475A (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59111333A (ja) * | 1982-12-09 | 1984-06-27 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | ＳｉＯ領域をＳｉＯ↓２領域に変換してＳｉＯ↓２領を形成する方法 |
| WO1986005320A1 (en) * | 1985-02-28 | 1986-09-12 | Sony Corporation | Method and system for fabricating insulating layer on semiconductor substrate surface |
| DE3545242A1 (de) * | 1985-12-20 | 1987-06-25 | Licentia Gmbh | Strukturierter halbleiterkoerper |
| US5178682A (en) * | 1988-06-21 | 1993-01-12 | Mitsubishi Denki Kabushiki Kaisha | Method for forming a thin layer on a semiconductor substrate and apparatus therefor |
| JPH01319944A (ja) * | 1988-06-21 | 1989-12-26 | Mitsubishi Electric Corp | 半導体基板表面に薄膜を形成する方法およびその装置 |
| FR2635915B1 (fr) * | 1988-08-30 | 1992-04-30 | Loualiche Slimane | Procede de fabrication d'une couche mince d'oxyde par voie seche sur un materiau iii-v, couche d'oxyde obtenue par ce procede et application a une diode schottky |
| US7892404B2 (en) * | 2004-05-21 | 2011-02-22 | Mitsubishi Gas Chemical Company, Inc. | Method for oxidizing substance and oxidation apparatus therefor |
| JP6501486B2 (ja) * | 2014-10-27 | 2019-04-17 | 学校法人東海大学 | 滅菌装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3718503A (en) * | 1971-07-14 | 1973-02-27 | Us Army | Method of forming a diffusion mask barrier on a silicon substrate |
| DE2155849C3 (de) * | 1971-11-10 | 1979-07-26 | Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg | Verfahren zur Herstellung eines stabilisierenden und/oder isolierenden Überzuges auf Halbleiteroberflächen |
| EP0030798B1 (en) * | 1979-12-17 | 1983-12-28 | Hughes Aircraft Company | Low temperature process for depositing oxide layers by photochemical vapor deposition |
-
1982
- 1982-10-19 GB GB08229832A patent/GB2111037B/en not_active Expired
- 1982-11-18 NL NL8204475A patent/NL8204475A/nl not_active Application Discontinuation
- 1982-11-20 DE DE19823242921 patent/DE3242921A1/de not_active Withdrawn
- 1982-11-23 FR FR8219564A patent/FR2517121A1/fr active Pending
- 1982-11-24 JP JP57205925A patent/JPS58155725A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| GB2111037B (en) | 1984-10-17 |
| GB2111037A (en) | 1983-06-29 |
| JPH0436456B2 (https=) | 1992-06-16 |
| FR2517121A1 (fr) | 1983-05-27 |
| JPS58155725A (ja) | 1983-09-16 |
| DE3242921A1 (de) | 1983-08-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A85 | Still pending on 85-01-01 | ||
| BV | The patent application has lapsed |