DE3680623D1 - Verfahren zur herstellung isolierender oxid-schichten auf einem halbleiterkoerper. - Google Patents

Verfahren zur herstellung isolierender oxid-schichten auf einem halbleiterkoerper.

Info

Publication number
DE3680623D1
DE3680623D1 DE8686901517A DE3680623A DE3680623D1 DE 3680623 D1 DE3680623 D1 DE 3680623D1 DE 8686901517 A DE8686901517 A DE 8686901517A DE 3680623 A DE3680623 A DE 3680623A DE 3680623 D1 DE3680623 D1 DE 3680623D1
Authority
DE
Germany
Prior art keywords
semiconductor body
oxide layers
insulating oxide
producing insulating
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8686901517A
Other languages
English (en)
Other versions
DE3680623A1 (de
Inventor
Toshiyuki Samejima
Setsuo Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60040176A external-priority patent/JPH077760B2/ja
Priority claimed from JP4017585A external-priority patent/JPS61199638A/ja
Priority claimed from JP60040177A external-priority patent/JPH0691073B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE3680623A1 publication Critical patent/DE3680623A1/de
Publication of DE3680623D1 publication Critical patent/DE3680623D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electromagnetism (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Semiconductors (AREA)
DE8686901517A 1985-02-28 1986-02-28 Verfahren zur herstellung isolierender oxid-schichten auf einem halbleiterkoerper. Expired - Lifetime DE3680623D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60040176A JPH077760B2 (ja) 1985-02-28 1985-02-28 半導体の酸化方法
JP4017585A JPS61199638A (ja) 1985-02-28 1985-02-28 絶縁膜の形成方法
JP60040177A JPH0691073B2 (ja) 1985-02-28 1985-02-28 原子の導入装置

Publications (2)

Publication Number Publication Date
DE3680623A1 DE3680623A1 (de) 1991-09-05
DE3680623D1 true DE3680623D1 (de) 1991-09-05

Family

ID=27290390

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8686901517A Expired - Lifetime DE3680623D1 (de) 1985-02-28 1986-02-28 Verfahren zur herstellung isolierender oxid-schichten auf einem halbleiterkoerper.

Country Status (3)

Country Link
EP (1) EP0216933B1 (de)
DE (1) DE3680623D1 (de)
WO (1) WO1986005320A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2605647B1 (fr) * 1986-10-27 1993-01-29 Nissim Yves Procede de depot en phase vapeur par flash thermique d'une couche isolante sur un substrat en materiau iii-v, application a la fabrication d'une structure mis
US5443863A (en) * 1994-03-16 1995-08-22 Auburn University Low-temperature oxidation at surfaces using ozone decomposition products formed by microwave discharge
CN105529245A (zh) * 2014-09-29 2016-04-27 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法以及半导体结构的形成装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2111037B (en) * 1981-11-23 1984-10-17 Hughes Aircraft Co Preparing substrates for semi-conductors
JPS59207631A (ja) * 1983-05-11 1984-11-24 Semiconductor Res Found 光化学を用いたドライプロセス装置
US4595601A (en) * 1984-05-25 1986-06-17 Kabushiki Kaisha Toshiba Method of selectively forming an insulation layer

Also Published As

Publication number Publication date
EP0216933A1 (de) 1987-04-08
EP0216933B1 (de) 1991-07-31
WO1986005320A1 (en) 1986-09-12
DE3680623A1 (de) 1991-09-05

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee