DE3203743C2 - - Google Patents

Info

Publication number
DE3203743C2
DE3203743C2 DE3203743A DE3203743A DE3203743C2 DE 3203743 C2 DE3203743 C2 DE 3203743C2 DE 3203743 A DE3203743 A DE 3203743A DE 3203743 A DE3203743 A DE 3203743A DE 3203743 C2 DE3203743 C2 DE 3203743C2
Authority
DE
Germany
Prior art keywords
hydrogen
chlorosilanes
gas mixture
hydrogen chloride
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3203743A
Other languages
German (de)
English (en)
Other versions
DE3203743A1 (de
Inventor
Rudolf Dipl.-Chem. Dr. 8263 Burghausen De Griesshammer
Franz Dipl.-Ing. Dr. Koeppl (Fh), 8261 Altoetting, De
Winfried Dipl.-Chem. Dr. Ach At Lang
Ernst Dipl.-Chem. Dr. 8961 Sulzberg De Muehlhofer
Michael Dipl.-Chem. Dr. 8265 Neuoetting De Schwab
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Priority to DE19823203743 priority Critical patent/DE3203743A1/de
Priority to IT49315/82A priority patent/IT1189396B/it
Priority to US06/442,145 priority patent/US4515762A/en
Publication of DE3203743A1 publication Critical patent/DE3203743A1/de
Application granted granted Critical
Publication of DE3203743C2 publication Critical patent/DE3203743C2/de
Granted legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/46—Removing components of defined structure
    • B01D53/68—Halogens or halogen compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/14—Methods for preparing oxides or hydroxides in general
    • C01B13/20—Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state
    • C01B13/22—Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state of halides or oxyhalides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
    • C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C01B33/181—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process
    • C01B33/183—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process by oxidation or hydrolysis in the vapour phase of silicon compounds such as halides, trichlorosilane, monosilane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Biomedical Technology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Silicon Compounds (AREA)
DE19823203743 1982-02-04 1982-02-04 Verfahren zur aufbereitung von bei der siliciumherstellung anfallenden abgasen Granted DE3203743A1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE19823203743 DE3203743A1 (de) 1982-02-04 1982-02-04 Verfahren zur aufbereitung von bei der siliciumherstellung anfallenden abgasen
IT49315/82A IT1189396B (it) 1982-02-04 1982-10-20 Procedimento per trattare gas di scarico risultanti nella produzione di silicio
US06/442,145 US4515762A (en) 1982-02-04 1982-11-16 Process for processing waste gases resulting during the production of silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19823203743 DE3203743A1 (de) 1982-02-04 1982-02-04 Verfahren zur aufbereitung von bei der siliciumherstellung anfallenden abgasen

Publications (2)

Publication Number Publication Date
DE3203743A1 DE3203743A1 (de) 1983-08-04
DE3203743C2 true DE3203743C2 (en, 2012) 1992-05-07

Family

ID=6154753

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19823203743 Granted DE3203743A1 (de) 1982-02-04 1982-02-04 Verfahren zur aufbereitung von bei der siliciumherstellung anfallenden abgasen

Country Status (3)

Country Link
US (1) US4515762A (en, 2012)
DE (1) DE3203743A1 (en, 2012)
IT (1) IT1189396B (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19507841B4 (de) * 1994-03-07 2006-07-06 Hemlock Semiconductor Corp., Hemlock Behandlung von Abgas, um Chlorwasserstoff zu entfernen

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4941893B1 (en) * 1989-09-19 1996-07-30 Advanced Silicon Materials Inc Gas separation by semi-permeable membranes
US5118486A (en) * 1991-04-26 1992-06-02 Hemlock Semiconductor Corporation Separation by atomization of by-product stream into particulate silicon and silanes
DE4240741A1 (de) * 1992-12-03 1994-06-09 Wacker Chemie Gmbh Verfahren zur Hydrophobierung von pyrogen hergestelltem Siliciumdioxid
US5910295A (en) * 1997-11-10 1999-06-08 Memc Electronic Materials, Inc. Closed loop process for producing polycrystalline silicon and fumed silica
EP0968753A4 (en) * 1997-12-15 2002-10-29 Nippon Oxygen Co Ltd METHOD AND DEVICE FOR TREATING EXHAUST GAS
FR2836839B1 (fr) † 2002-03-07 2004-07-09 Cit Alcatel Procede de traitement de rejets gazeux provenant d'une unite de fabrication d'une preforme de fibre optique
US20090165646A1 (en) * 2007-12-31 2009-07-02 Sarang Gadre Effluent gas recovery process for silicon production
US20090166173A1 (en) * 2007-12-31 2009-07-02 Sarang Gadre Effluent gas recovery process for silicon production
US20090165647A1 (en) * 2007-12-31 2009-07-02 Sarang Gadre Effluent gas recovery process for silicon production
DE102009043946A1 (de) * 2009-09-04 2011-03-17 G+R Technology Group Ag Anlage und Verfahren zur Steuerung der Anlage für die Herstellung von polykristallinem Silizium
EP2599537A4 (en) * 2010-07-30 2014-09-17 Jx Nippon Oil & Energy Corp GAS PROCESSING SYSTEM
US9259683B2 (en) * 2014-01-22 2016-02-16 Micron Technology, Inc. Methods and apparatus for treating fluorinated greenhouse gases in gas streams
DE112020006779T5 (de) * 2020-02-20 2023-03-02 Guangzhou Huifu Research Institute Co., Ltd. Kombinationsbehandlungsvorrichtung und -verfahren zur Oberflächenmodifikation vom Gasphasen-Siliziumdioxid
CN115155289A (zh) * 2022-06-22 2022-10-11 浙江西亚特电子材料有限公司 一种三氯硅烷尾气吸收的装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE149054C (en, 2012) *
BE790704A (fr) * 1971-10-28 1973-02-15 Degussa Procede pour la fabrication d'oxydes finement
DE2918060A1 (de) * 1979-05-04 1980-11-13 Siemens Ag Verfahren zur rueckgewinnung von bei der abscheidung von silicium durch thermische zersetzung anfallenden restgasen
DE2923182A1 (de) * 1979-06-08 1980-12-18 Degussa Verfahren zur pyrogenen herstellung von feinstteiligem oxid eines matalls und/oder eines metalloids

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19507841B4 (de) * 1994-03-07 2006-07-06 Hemlock Semiconductor Corp., Hemlock Behandlung von Abgas, um Chlorwasserstoff zu entfernen

Also Published As

Publication number Publication date
DE3203743A1 (de) 1983-08-04
US4515762A (en) 1985-05-07
IT1189396B (it) 1988-02-04
IT8249315A0 (it) 1982-10-20

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee