IT1189396B - Procedimento per trattare gas di scarico risultanti nella produzione di silicio - Google Patents
Procedimento per trattare gas di scarico risultanti nella produzione di silicioInfo
- Publication number
- IT1189396B IT1189396B IT49315/82A IT4931582A IT1189396B IT 1189396 B IT1189396 B IT 1189396B IT 49315/82 A IT49315/82 A IT 49315/82A IT 4931582 A IT4931582 A IT 4931582A IT 1189396 B IT1189396 B IT 1189396B
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- exhaust gas
- treating exhaust
- gas resulting
- silicon production
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
- B01D53/68—Halogens or halogen compounds
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
- C01B13/14—Methods for preparing oxides or hydroxides in general
- C01B13/20—Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state
- C01B13/22—Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state of halides or oxyhalides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
- C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
- C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
- C01B33/181—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process
- C01B33/183—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process by oxidation or hydrolysis in the vapour phase of silicon compounds such as halides, trichlorosilane, monosilane
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Biomedical Technology (AREA)
- Environmental & Geological Engineering (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19823203743 DE3203743A1 (de) | 1982-02-04 | 1982-02-04 | Verfahren zur aufbereitung von bei der siliciumherstellung anfallenden abgasen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| IT8249315A0 IT8249315A0 (it) | 1982-10-20 |
| IT1189396B true IT1189396B (it) | 1988-02-04 |
Family
ID=6154753
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT49315/82A IT1189396B (it) | 1982-02-04 | 1982-10-20 | Procedimento per trattare gas di scarico risultanti nella produzione di silicio |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4515762A (en, 2012) |
| DE (1) | DE3203743A1 (en, 2012) |
| IT (1) | IT1189396B (en, 2012) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4941893B1 (en) * | 1989-09-19 | 1996-07-30 | Advanced Silicon Materials Inc | Gas separation by semi-permeable membranes |
| US5118486A (en) * | 1991-04-26 | 1992-06-02 | Hemlock Semiconductor Corporation | Separation by atomization of by-product stream into particulate silicon and silanes |
| DE4240741A1 (de) * | 1992-12-03 | 1994-06-09 | Wacker Chemie Gmbh | Verfahren zur Hydrophobierung von pyrogen hergestelltem Siliciumdioxid |
| US5401872A (en) * | 1994-03-07 | 1995-03-28 | Hemlock Semiconductor | Treatment of vent gas to remove hydrogen chloride |
| US5910295A (en) * | 1997-11-10 | 1999-06-08 | Memc Electronic Materials, Inc. | Closed loop process for producing polycrystalline silicon and fumed silica |
| EP0968753A4 (en) * | 1997-12-15 | 2002-10-29 | Nippon Oxygen Co Ltd | METHOD AND DEVICE FOR TREATING EXHAUST GAS |
| FR2836839B1 (fr) † | 2002-03-07 | 2004-07-09 | Cit Alcatel | Procede de traitement de rejets gazeux provenant d'une unite de fabrication d'une preforme de fibre optique |
| US20090165646A1 (en) * | 2007-12-31 | 2009-07-02 | Sarang Gadre | Effluent gas recovery process for silicon production |
| US20090166173A1 (en) * | 2007-12-31 | 2009-07-02 | Sarang Gadre | Effluent gas recovery process for silicon production |
| US20090165647A1 (en) * | 2007-12-31 | 2009-07-02 | Sarang Gadre | Effluent gas recovery process for silicon production |
| DE102009043946A1 (de) * | 2009-09-04 | 2011-03-17 | G+R Technology Group Ag | Anlage und Verfahren zur Steuerung der Anlage für die Herstellung von polykristallinem Silizium |
| EP2599537A4 (en) * | 2010-07-30 | 2014-09-17 | Jx Nippon Oil & Energy Corp | GAS PROCESSING SYSTEM |
| US9259683B2 (en) * | 2014-01-22 | 2016-02-16 | Micron Technology, Inc. | Methods and apparatus for treating fluorinated greenhouse gases in gas streams |
| DE112020006779T5 (de) * | 2020-02-20 | 2023-03-02 | Guangzhou Huifu Research Institute Co., Ltd. | Kombinationsbehandlungsvorrichtung und -verfahren zur Oberflächenmodifikation vom Gasphasen-Siliziumdioxid |
| CN115155289A (zh) * | 2022-06-22 | 2022-10-11 | 浙江西亚特电子材料有限公司 | 一种三氯硅烷尾气吸收的装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE149054C (en, 2012) * | ||||
| BE790704A (fr) * | 1971-10-28 | 1973-02-15 | Degussa | Procede pour la fabrication d'oxydes finement |
| DE2918060A1 (de) * | 1979-05-04 | 1980-11-13 | Siemens Ag | Verfahren zur rueckgewinnung von bei der abscheidung von silicium durch thermische zersetzung anfallenden restgasen |
| DE2923182A1 (de) * | 1979-06-08 | 1980-12-18 | Degussa | Verfahren zur pyrogenen herstellung von feinstteiligem oxid eines matalls und/oder eines metalloids |
-
1982
- 1982-02-04 DE DE19823203743 patent/DE3203743A1/de active Granted
- 1982-10-20 IT IT49315/82A patent/IT1189396B/it active
- 1982-11-16 US US06/442,145 patent/US4515762A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE3203743A1 (de) | 1983-08-04 |
| US4515762A (en) | 1985-05-07 |
| IT8249315A0 (it) | 1982-10-20 |
| DE3203743C2 (en, 2012) | 1992-05-07 |
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