IT8249315A0 - Procedimento per trattare gas di scarico risultanti nella produzionedi silicio - Google Patents

Procedimento per trattare gas di scarico risultanti nella produzionedi silicio

Info

Publication number
IT8249315A0
IT8249315A0 IT8249315A IT4931582A IT8249315A0 IT 8249315 A0 IT8249315 A0 IT 8249315A0 IT 8249315 A IT8249315 A IT 8249315A IT 4931582 A IT4931582 A IT 4931582A IT 8249315 A0 IT8249315 A0 IT 8249315A0
Authority
IT
Italy
Prior art keywords
silicon
procedure
production
exhaust gases
treating exhaust
Prior art date
Application number
IT8249315A
Other languages
English (en)
Other versions
IT1189396B (it
Inventor
Rudolf Griesshammer
Franz Koppl
Winfried Lang
Ernst Muhlhofer
Michael Schwab
Original Assignee
Wacker Chemitronic
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Chemitronic filed Critical Wacker Chemitronic
Publication of IT8249315A0 publication Critical patent/IT8249315A0/it
Application granted granted Critical
Publication of IT1189396B publication Critical patent/IT1189396B/it

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/46—Removing components of defined structure
    • B01D53/68—Halogens or halogen compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B13/00—Oxygen; Ozone; Oxides or hydroxides in general
    • C01B13/14—Methods for preparing oxides or hydroxides in general
    • C01B13/20—Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state
    • C01B13/22—Methods for preparing oxides or hydroxides in general by oxidation of elements in the gaseous state; by oxidation or hydrolysis of compounds in the gaseous state of halides or oxyhalides
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
    • C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C01B33/181—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process
    • C01B33/183—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process by oxidation or hydrolysis in the vapour phase of silicon compounds such as halides, trichlorosilane, monosilane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Biomedical Technology (AREA)
  • Environmental & Geological Engineering (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Silicon Compounds (AREA)
IT49315/82A 1982-02-04 1982-10-20 Procedimento per trattare gas di scarico risultanti nella produzione di silicio IT1189396B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19823203743 DE3203743A1 (de) 1982-02-04 1982-02-04 Verfahren zur aufbereitung von bei der siliciumherstellung anfallenden abgasen

Publications (2)

Publication Number Publication Date
IT8249315A0 true IT8249315A0 (it) 1982-10-20
IT1189396B IT1189396B (it) 1988-02-04

Family

ID=6154753

Family Applications (1)

Application Number Title Priority Date Filing Date
IT49315/82A IT1189396B (it) 1982-02-04 1982-10-20 Procedimento per trattare gas di scarico risultanti nella produzione di silicio

Country Status (3)

Country Link
US (1) US4515762A (it)
DE (1) DE3203743A1 (it)
IT (1) IT1189396B (it)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4941893B1 (en) * 1989-09-19 1996-07-30 Advanced Silicon Materials Inc Gas separation by semi-permeable membranes
US5118486A (en) * 1991-04-26 1992-06-02 Hemlock Semiconductor Corporation Separation by atomization of by-product stream into particulate silicon and silanes
DE4240741A1 (de) * 1992-12-03 1994-06-09 Wacker Chemie Gmbh Verfahren zur Hydrophobierung von pyrogen hergestelltem Siliciumdioxid
US5401872A (en) * 1994-03-07 1995-03-28 Hemlock Semiconductor Treatment of vent gas to remove hydrogen chloride
US5910295A (en) * 1997-11-10 1999-06-08 Memc Electronic Materials, Inc. Closed loop process for producing polycrystalline silicon and fumed silica
WO1999030809A1 (fr) * 1997-12-15 1999-06-24 Nippon Sanso Corporation Procede et dispositif de traitement d'un gaz d'echappement
FR2836839B1 (fr) † 2002-03-07 2004-07-09 Cit Alcatel Procede de traitement de rejets gazeux provenant d'une unite de fabrication d'une preforme de fibre optique
US20090166173A1 (en) * 2007-12-31 2009-07-02 Sarang Gadre Effluent gas recovery process for silicon production
US20090165646A1 (en) * 2007-12-31 2009-07-02 Sarang Gadre Effluent gas recovery process for silicon production
US20090165647A1 (en) * 2007-12-31 2009-07-02 Sarang Gadre Effluent gas recovery process for silicon production
DE102009043946A1 (de) * 2009-09-04 2011-03-17 G+R Technology Group Ag Anlage und Verfahren zur Steuerung der Anlage für die Herstellung von polykristallinem Silizium
CN103052435A (zh) * 2010-07-30 2013-04-17 吉坤日矿日石能源株式会社 排气处理系统
US9259683B2 (en) * 2014-01-22 2016-02-16 Micron Technology, Inc. Methods and apparatus for treating fluorinated greenhouse gases in gas streams

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE149054C (it) *
BE790704A (fr) * 1971-10-28 1973-02-15 Degussa Procede pour la fabrication d'oxydes finement
DE2918060A1 (de) * 1979-05-04 1980-11-13 Siemens Ag Verfahren zur rueckgewinnung von bei der abscheidung von silicium durch thermische zersetzung anfallenden restgasen
DE2923182A1 (de) * 1979-06-08 1980-12-18 Degussa Verfahren zur pyrogenen herstellung von feinstteiligem oxid eines matalls und/oder eines metalloids

Also Published As

Publication number Publication date
US4515762A (en) 1985-05-07
DE3203743A1 (de) 1983-08-04
DE3203743C2 (it) 1992-05-07
IT1189396B (it) 1988-02-04

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