DE3202202C2 - - Google Patents
Info
- Publication number
- DE3202202C2 DE3202202C2 DE3202202A DE3202202A DE3202202C2 DE 3202202 C2 DE3202202 C2 DE 3202202C2 DE 3202202 A DE3202202 A DE 3202202A DE 3202202 A DE3202202 A DE 3202202A DE 3202202 C2 DE3202202 C2 DE 3202202C2
- Authority
- DE
- Germany
- Prior art keywords
- electrodes
- toner
- electrode
- image
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 15
- 239000011241 protective layer Substances 0.000 claims description 5
- 229910010272 inorganic material Inorganic materials 0.000 claims description 2
- 239000011147 inorganic material Substances 0.000 claims description 2
- 229920000620 organic polymer Polymers 0.000 claims 1
- 238000000034 method Methods 0.000 description 35
- 239000004065 semiconductor Substances 0.000 description 32
- 230000000007 visual effect Effects 0.000 description 20
- 239000010409 thin film Substances 0.000 description 18
- 239000002245 particle Substances 0.000 description 17
- 239000010408 film Substances 0.000 description 14
- 238000012546 transfer Methods 0.000 description 14
- 239000003990 capacitor Substances 0.000 description 12
- 239000010410 layer Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000003384 imaging method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000003086 colorant Substances 0.000 description 5
- 230000005669 field effect Effects 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000010276 construction Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000036961 partial effect Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000012217 deletion Methods 0.000 description 2
- 230000037430 deletion Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000003208 petroleum Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000001454 recorded image Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical group 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 150000003606 tin compounds Chemical class 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G15/00—Apparatus for electrographic processes using a charge pattern
- G03G15/22—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G15/00—Apparatus for electrographic processes using a charge pattern
- G03G15/22—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20
- G03G15/34—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20 in which the powder image is formed directly on the recording material, e.g. by using a liquid toner
- G03G15/344—Apparatus for electrographic processes using a charge pattern involving the combination of more than one step according to groups G03G13/02 - G03G13/20 in which the powder image is formed directly on the recording material, e.g. by using a liquid toner by selectively transferring the powder to the recording medium, e.g. by using a LED array
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G17/00—Electrographic processes using patterns other than charge patterns, e.g. an electric conductivity pattern; Processes involving a migration, e.g. photoelectrophoresis, photoelectrosolography; Processes involving a selective transfer, e.g. electrophoto-adhesive processes; Apparatus essentially involving a single such process
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N1/00—Scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission; Details thereof
- H04N1/23—Reproducing arrangements
- H04N1/29—Reproducing arrangements involving production of an electrostatic intermediate picture
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Electrophotography Using Other Than Carlson'S Method (AREA)
- Duplication Or Marking (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56009954A JPS57124367A (en) | 1981-01-26 | 1981-01-26 | Image forming method and its device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3202202A1 DE3202202A1 (de) | 1982-08-19 |
| DE3202202C2 true DE3202202C2 (enExample) | 1991-04-11 |
Family
ID=11734345
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19823202202 Granted DE3202202A1 (de) | 1981-01-26 | 1982-01-25 | "verfahren und vorrichtung zur bilderzeugung" |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4448867A (enExample) |
| JP (1) | JPS57124367A (enExample) |
| DE (1) | DE3202202A1 (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57124881U (enExample) * | 1981-01-29 | 1982-08-04 | ||
| US4680625A (en) * | 1984-07-18 | 1987-07-14 | Konishiroku Photo Industry Co., Ltd. | Method and apparatus for multicolor image forming |
| JPS61130058A (ja) * | 1984-11-30 | 1986-06-17 | Mita Ind Co Ltd | 静電式画像形成装置 |
| JPS61130057A (ja) * | 1984-11-30 | 1986-06-17 | Mita Ind Co Ltd | 静電式画像出力装置 |
| US4671642A (en) * | 1985-04-24 | 1987-06-09 | Canon Kabushiki Kaisha | Image forming apparatus |
| EP0246287A4 (en) * | 1985-11-26 | 1990-12-27 | Jabali Pty. Ltd. | Photo-electric imaging device |
| US4792860A (en) * | 1987-02-27 | 1988-12-20 | Kuehrle Manfred R | Thermodynamic printing method and means |
| SE459724B (sv) * | 1987-12-08 | 1989-07-31 | Larson Prod Ab Ove | Saett och anordning foer att framstaella ett latent elektriskt laddningsmoenster |
| US4780733A (en) * | 1987-12-31 | 1988-10-25 | Xerox Corporation | Printing apparatus and toner/developer delivery system therefor |
| US5121688A (en) * | 1988-08-19 | 1992-06-16 | Presstek, Inc. | Spark-discharge recording head with position sensor and control for imaging lithographic printing plates |
| DE3836931C2 (de) * | 1988-10-29 | 1993-11-04 | Roland Man Druckmasch | Druckform fuer eine druckmaschine mit wiederholt aktivierbaren und loeschbaren bereichen |
| US5157422A (en) * | 1988-12-16 | 1992-10-20 | Brother Kogyo Kabushiki Kaisha | Solid imaging member with matrix of connected photoelectric conversion devices, providing exposure surface, and charge storage devices, providing opposite surface for latent image formation and developed image transfer |
| US5256246A (en) * | 1990-03-05 | 1993-10-26 | Brother Kogyo Kabushiki Kaisha | Method for manufacturing aperture electrode for controlling toner supply operation |
| US5777576A (en) * | 1991-05-08 | 1998-07-07 | Imagine Ltd. | Apparatus and methods for non impact imaging and digital printing |
| US5157423A (en) * | 1991-05-08 | 1992-10-20 | Cubital Ltd. | Apparatus for pattern generation on a dielectric substrate |
| JP2547916B2 (ja) * | 1992-01-08 | 1996-10-30 | 株式会社東芝 | 画像形成装置 |
| RU2075909C1 (ru) * | 1993-06-15 | 1997-03-20 | Анатолий Геннадиевич Иванов | Способ преобразования плоскостных сигналов и устройство для его осуществления |
| JPH07137330A (ja) * | 1993-11-12 | 1995-05-30 | Brother Ind Ltd | 画像形成装置 |
| US5813345A (en) * | 1996-09-09 | 1998-09-29 | Presstek, Inc. | Lithographic imaging system for interchangeable plate cylinders |
| KR19980082567A (ko) * | 1997-05-07 | 1998-12-05 | 윤종용 | 감광드럼 오염방지방법 |
| KR19980082569A (ko) * | 1997-05-07 | 1998-12-05 | 윤종용 | 백 그라운드 화상형성 방지방법과 장치 |
| US6100909A (en) * | 1998-03-02 | 2000-08-08 | Xerox Corporation | Matrix addressable array for digital xerography |
| US6448990B1 (en) * | 2000-11-07 | 2002-09-10 | Hewlett-Packard Company | Toner processing systems and electronic display devices and methods |
| US6396525B1 (en) * | 2000-11-07 | 2002-05-28 | Hewlett-Packard Company | Electronic display devices and methods |
| US7121209B2 (en) * | 2004-01-16 | 2006-10-17 | Nandakumar Vaidyanathan | Digital semiconductor based printing system and method |
| KR100634504B1 (ko) * | 2004-05-19 | 2006-10-16 | 삼성전자주식회사 | 박막 트랜지스터 어레이를 이용한 정전잠상 형성매체와이를 구비한 화상형성장치 |
| WO2006113444A2 (en) * | 2005-04-13 | 2006-10-26 | Nandakumar Vaidyanathan | Digital semiconductor based printing system and method |
| US7755654B2 (en) * | 2006-07-25 | 2010-07-13 | Hewlett-Packard Development Company, L.P. | Pixel |
| US20080100534A1 (en) * | 2006-10-26 | 2008-05-01 | Hewlett-Packard Development Company Lp | Switch |
| DE112010003339A5 (de) * | 2009-08-19 | 2012-08-09 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Programmierbarer Stempel |
| EP2491462A1 (en) * | 2009-10-20 | 2012-08-29 | OCE-Technologies B.V. | Apparatus and method for mounting particles on a carrier |
| US8587622B2 (en) * | 2011-02-25 | 2013-11-19 | Xerox Corporation | Generation of digital electrostatic latent images and data communications system using rotary contacts |
| US10281430B2 (en) * | 2016-07-15 | 2019-05-07 | The United States of America as represented by the Administratior of NASA | Identification and characterization of remote objects by electric charge tunneling, injection, and induction, and an erasable organic molecular memory |
| RU2647751C1 (ru) * | 2016-11-08 | 2018-03-19 | федеральное государственное бюджетное образовательное учреждение высшего образования "Алтайский государственный технический университет им. И.И. Ползунова" (АлтГТУ) | Роторно-поршневой двигатель внутреннего сгорания |
| US12083813B2 (en) * | 2021-10-21 | 2024-09-10 | Viavi Solutions Inc. | Printing machine and fixed patterned plate |
| US12481852B2 (en) | 2021-11-12 | 2025-11-25 | Viavi Solutions Inc. | Article including an image including two or more types of pixels |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3518698A (en) * | 1966-09-29 | 1970-06-30 | Xerox Corp | Imaging system |
| CA1024583A (en) * | 1973-04-19 | 1978-01-17 | Jack S. Kilby | Electrostatic display system |
| US3816840A (en) * | 1973-04-20 | 1974-06-11 | Minnesota Mining & Mfg | Electrographic recording process and apparatus using conductive toner subject to a capacitive force |
| US4005436A (en) * | 1975-07-10 | 1977-01-25 | Rca Corporation | Apparatus for making a recording of an electrostatic charge pattern |
| AU4038278A (en) * | 1977-10-04 | 1980-04-17 | Repco Ltd | Electrographic plate |
| AU4038178A (en) * | 1977-10-04 | 1980-04-17 | Repco Res Pty Ltd | Electrographic copying apparatus |
-
1981
- 1981-01-26 JP JP56009954A patent/JPS57124367A/ja active Pending
-
1982
- 1982-01-18 US US06/340,459 patent/US4448867A/en not_active Expired - Lifetime
- 1982-01-25 DE DE19823202202 patent/DE3202202A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3202202A1 (de) | 1982-08-19 |
| US4448867A (en) | 1984-05-15 |
| JPS57124367A (en) | 1982-08-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |