DE3150164C2 - - Google Patents
Info
- Publication number
- DE3150164C2 DE3150164C2 DE3150164A DE3150164A DE3150164C2 DE 3150164 C2 DE3150164 C2 DE 3150164C2 DE 3150164 A DE3150164 A DE 3150164A DE 3150164 A DE3150164 A DE 3150164A DE 3150164 C2 DE3150164 C2 DE 3150164C2
- Authority
- DE
- Germany
- Prior art keywords
- region
- layer
- regions
- semiconductor junction
- polycrystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 52
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 37
- 239000004020 conductor Substances 0.000 claims description 33
- 230000015556 catabolic process Effects 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 229920005591 polysilicon Polymers 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 8
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 230000007704 transition Effects 0.000 description 43
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 26
- 229910052782 aluminium Inorganic materials 0.000 description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 125000004429 atom Chemical group 0.000 description 13
- 230000000903 blocking effect Effects 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 125000004437 phosphorous atom Chemical group 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- 229910006107 GeBiTe Inorganic materials 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 206010016256 fatigue Diseases 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 239000000256 polyoxyethylene sorbitan monolaurate Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
Landscapes
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US22045980A | 1980-12-29 | 1980-12-29 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3150164A1 DE3150164A1 (de) | 1982-08-12 |
| DE3150164C2 true DE3150164C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-06-04 |
Family
ID=22823618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813150164 Granted DE3150164A1 (de) | 1980-12-29 | 1981-12-18 | Programmierbarer festwertspeicher und speicherzelle zur anwendung in einem derartigen speicher |
Country Status (6)
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE755039A (fr) * | 1969-09-15 | 1971-02-01 | Ibm | Memoire semi-conductrice permanente |
| CA1135854A (en) * | 1977-09-30 | 1982-11-16 | Michel Moussie | Programmable read only memory cell |
| FR2404895A1 (fr) * | 1977-09-30 | 1979-04-27 | Radiotechnique Compelec | Cellule de memoire programmable a diodes semiconductrices |
-
1981
- 1981-12-18 DE DE19813150164 patent/DE3150164A1/de active Granted
- 1981-12-23 IE IE3075/81A patent/IE53422B1/en not_active IP Right Cessation
- 1981-12-24 GB GB8138961A patent/GB2090468B/en not_active Expired
- 1981-12-24 IT IT25855/81A patent/IT1140185B/it active
- 1981-12-28 FR FR8124285A patent/FR2497386B1/fr not_active Expired
- 1981-12-28 JP JP21601581A patent/JPS57133669A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0147021B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1989-10-12 |
| FR2497386B1 (fr) | 1986-11-14 |
| IE53422B1 (en) | 1988-11-09 |
| IT8125855A0 (it) | 1981-12-24 |
| DE3150164A1 (de) | 1982-08-12 |
| GB2090468A (en) | 1982-07-07 |
| IT1140185B (it) | 1986-09-24 |
| FR2497386A1 (fr) | 1982-07-02 |
| JPS57133669A (en) | 1982-08-18 |
| GB2090468B (en) | 1985-05-30 |
| IE813075L (en) | 1982-06-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
| 8339 | Ceased/non-payment of the annual fee |