DE3149240C2 - - Google Patents
Info
- Publication number
- DE3149240C2 DE3149240C2 DE3149240A DE3149240A DE3149240C2 DE 3149240 C2 DE3149240 C2 DE 3149240C2 DE 3149240 A DE3149240 A DE 3149240A DE 3149240 A DE3149240 A DE 3149240A DE 3149240 C2 DE3149240 C2 DE 3149240C2
- Authority
- DE
- Germany
- Prior art keywords
- substrate
- memory
- conductivity type
- region
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000015654 memory Effects 0.000 claims description 119
- 239000012535 impurity Substances 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 238000003860 storage Methods 0.000 claims description 20
- 229910052796 boron Inorganic materials 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 15
- 235000012239 silicon dioxide Nutrition 0.000 claims description 14
- 239000000377 silicon dioxide Substances 0.000 claims description 14
- 239000004065 semiconductor Substances 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 11
- 239000012212 insulator Substances 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 229910052785 arsenic Inorganic materials 0.000 claims description 6
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 6
- -1 boron ions Chemical class 0.000 claims description 5
- 239000002800 charge carrier Substances 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims 1
- 238000002513 implantation Methods 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 238000009792 diffusion process Methods 0.000 description 10
- 150000004767 nitrides Chemical class 0.000 description 10
- 238000000034 method Methods 0.000 description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- FRIKWZARTBPWBN-UHFFFAOYSA-N [Si].O=[Si]=O Chemical compound [Si].O=[Si]=O FRIKWZARTBPWBN-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
Landscapes
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21522480A | 1980-12-11 | 1980-12-11 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3149240A1 DE3149240A1 (de) | 1982-08-05 |
| DE3149240C2 true DE3149240C2 (enrdf_load_stackoverflow) | 1992-09-24 |
Family
ID=22802154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813149240 Granted DE3149240A1 (de) | 1980-12-11 | 1981-12-11 | Elektrisch veraenderbarer festwertspeicher und verfahren zu dessen herstellung |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPS57145366A (enrdf_load_stackoverflow) |
| DE (1) | DE3149240A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2089566B (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2837821B2 (ja) * | 1994-04-15 | 1998-12-16 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 半導体デバイス |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4017888A (en) * | 1975-12-31 | 1977-04-12 | International Business Machines Corporation | Non-volatile metal nitride oxide semiconductor device |
| US4198252A (en) * | 1978-04-06 | 1980-04-15 | Rca Corporation | MNOS memory device |
-
1981
- 1981-12-10 GB GB8137312A patent/GB2089566B/en not_active Expired
- 1981-12-10 JP JP56199964A patent/JPS57145366A/ja active Granted
- 1981-12-11 DE DE19813149240 patent/DE3149240A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57145366A (en) | 1982-09-08 |
| JPH0219631B2 (enrdf_load_stackoverflow) | 1990-05-02 |
| DE3149240A1 (de) | 1982-08-05 |
| GB2089566A (en) | 1982-06-23 |
| GB2089566B (en) | 1985-07-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE4241457B4 (de) | P-leitendes floatendes Gate aus Poly-Silizium zur Verwendung bei einem Halbleiterbautransistorelement und daraus hergestelltes Flash-E2PROM | |
| DE69130163T2 (de) | Verfahren zur Herstellung einer MOS-EEPROM-Transistorzelle mit schwebendem Gate | |
| DE2807181C2 (de) | Halbleiterspeichervorrichtung | |
| DE69222913T2 (de) | Nichtflüchtiger Speicher und Verfahren zu seiner Herstellung | |
| DE19512431C2 (de) | Halbleiterspeicherzelle mit wahlfreiem Zugriff auf Silicium-auf-Isolator mit doppelten Steuergates und deren Herstellungsverfahren | |
| DE2711895C2 (de) | Speicher-Feldeffekttransistor mit zwei Gateelektroden und Verfahren zu dessen Herstellung | |
| DE3782279T2 (de) | Elektrisch veraenderbare, nichtfluechtige speicheranordnung vom schwebenden gate-typ, mit geringerer tunneleffektflaeche und herstellung derselben. | |
| DE2829966C2 (de) | Halbleiterspeichervorrichtung | |
| DE2409472C3 (de) | Elektrisch löschbares Halbleiterspeicherelement mit einem Doppelgate-Isolierschicht-FET | |
| DE2409568C2 (de) | Halbleiter-Speicherelement | |
| DE2802141C2 (de) | Halbleiteranordnung | |
| DE3785509T2 (de) | Nichtfluechtige halbleiterspeicheranordnung. | |
| DE69320582T2 (de) | Verfahren zur Herstellung eines integrierten Schaltkreises mit einem nichtflüchtigen Speicherelement | |
| DE2838937A1 (de) | Rom-speicheranordnung mit feldeffekttransistoren | |
| DE2547828B2 (de) | Verfahren zur Herstellung eines Speicherelements mit einem Doppelgate-Isolierschicht-Feldeffekttransistor | |
| DE3029125A1 (de) | Halbleiterspeicher | |
| DE3029539A1 (de) | Nichtfluechtige, programmierbare integrierte halbleiterspeicherzelle | |
| DE69526328T2 (de) | Feldeffektanordnung | |
| EP0810673B1 (de) | Halbleiterbauelement mit Kompensationsimplantation und Herstellverfahren | |
| DE2455484A1 (de) | Monolithisch integriertes halb-festspeicher-element | |
| DE2614698C2 (de) | Halbleiterspeicher | |
| WO1999043030A1 (de) | Speicherzelle mit mos-transistor und verfahren zu ihrer herstellung | |
| DE2758161A1 (de) | Elektrisch programmierbare halbleiter-dauerspeichermatrix | |
| DE69218878T2 (de) | Nichtflüchtiger Halbleiterspeicher | |
| DE2937952A1 (de) | Nichtfluechtige speicheranordnung |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8128 | New person/name/address of the agent |
Representative=s name: GEYER, W., DIPL.-ING. DR.-ING. HAGEMANN, H., DIPL. |
|
| 8128 | New person/name/address of the agent |
Representative=s name: HAGEMANN, H., DIPL.-CHEM. DR.RER.NAT. KEHL, G., DI |
|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: KEHL, G., DIPL.-PHYS., PAT.-ANW., 81679 MUENCHEN |
|
| 8339 | Ceased/non-payment of the annual fee |