JPS57145366A - Electrically rewritable read only memory - Google Patents

Electrically rewritable read only memory

Info

Publication number
JPS57145366A
JPS57145366A JP56199964A JP19996481A JPS57145366A JP S57145366 A JPS57145366 A JP S57145366A JP 56199964 A JP56199964 A JP 56199964A JP 19996481 A JP19996481 A JP 19996481A JP S57145366 A JPS57145366 A JP S57145366A
Authority
JP
Japan
Prior art keywords
memory
electrically rewritable
rewritable read
read
electrically
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56199964A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0219631B2 (enrdf_load_stackoverflow
Inventor
Rajikanan Kamaru
Esu Marutani Jiyagaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
General Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Instrument Corp filed Critical General Instrument Corp
Publication of JPS57145366A publication Critical patent/JPS57145366A/ja
Publication of JPH0219631B2 publication Critical patent/JPH0219631B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/69IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP56199964A 1980-12-11 1981-12-10 Electrically rewritable read only memory Granted JPS57145366A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21522480A 1980-12-11 1980-12-11

Publications (2)

Publication Number Publication Date
JPS57145366A true JPS57145366A (en) 1982-09-08
JPH0219631B2 JPH0219631B2 (enrdf_load_stackoverflow) 1990-05-02

Family

ID=22802154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56199964A Granted JPS57145366A (en) 1980-12-11 1981-12-10 Electrically rewritable read only memory

Country Status (3)

Country Link
JP (1) JPS57145366A (enrdf_load_stackoverflow)
DE (1) DE3149240A1 (enrdf_load_stackoverflow)
GB (1) GB2089566B (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2837821B2 (ja) * 1994-04-15 1998-12-16 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体デバイス

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017888A (en) * 1975-12-31 1977-04-12 International Business Machines Corporation Non-volatile metal nitride oxide semiconductor device
US4198252A (en) * 1978-04-06 1980-04-15 Rca Corporation MNOS memory device

Also Published As

Publication number Publication date
DE3149240C2 (enrdf_load_stackoverflow) 1992-09-24
DE3149240A1 (de) 1982-08-05
JPH0219631B2 (enrdf_load_stackoverflow) 1990-05-02
GB2089566B (en) 1985-07-24
GB2089566A (en) 1982-06-23

Similar Documents

Publication Publication Date Title
GB2073488B (en) Electrically erasable programmable read only memory
JPS5788597A (en) Read only memory storage which can be changed over electrically
GB2081537B (en) Magneto-optic memory element
DE3166342D1 (en) Electrically alterable double dense memory
DE3176416D1 (en) Electrically alterable read only memory cell
JPS57143797A (en) Read only memory
JPS54162934A (en) Read only memory
JPS5730363A (en) Memory cell
JPS56124136A (en) Reversible memory structure
JPS57117189A (en) Programmable read only memory circuit
JPS56157590A (en) Memory card
JPS5730194A (en) Read only memory
DE3168866D1 (en) Read-only memory device
DE3265131D1 (en) Electrically erasable programmable read only memory
JPS5715289A (en) Memory cell
GB2099650B (en) Electrically programable read only memory
JPS5764393A (en) Memory array
DE3174971D1 (en) Read-only memory device
JPS578993A (en) Read only memory matrix
JPS56144490A (en) Data memory
DE3176075D1 (en) Memory circuit having a decoder
JPS55143074A (en) Rewritable readdonly memory
DE3176713D1 (en) Nonvolatile memory
JPS5727287A (en) Electrically activated recording element
JPS5752995A (en) Memory