GB2089566B - Electrically alterable read only memory semiconductor device - Google Patents

Electrically alterable read only memory semiconductor device

Info

Publication number
GB2089566B
GB2089566B GB8137312A GB8137312A GB2089566B GB 2089566 B GB2089566 B GB 2089566B GB 8137312 A GB8137312 A GB 8137312A GB 8137312 A GB8137312 A GB 8137312A GB 2089566 B GB2089566 B GB 2089566B
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
memory semiconductor
electrically alterable
alterable read
read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8137312A
Other versions
GB2089566A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
Arris Technology Inc
General Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arris Technology Inc, General Instrument Corp filed Critical Arris Technology Inc
Publication of GB2089566A publication Critical patent/GB2089566A/en
Application granted granted Critical
Publication of GB2089566B publication Critical patent/GB2089566B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
GB8137312A 1980-12-11 1981-12-10 Electrically alterable read only memory semiconductor device Expired GB2089566B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21522480A 1980-12-11 1980-12-11

Publications (2)

Publication Number Publication Date
GB2089566A GB2089566A (en) 1982-06-23
GB2089566B true GB2089566B (en) 1985-07-24

Family

ID=22802154

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8137312A Expired GB2089566B (en) 1980-12-11 1981-12-10 Electrically alterable read only memory semiconductor device

Country Status (3)

Country Link
JP (1) JPS57145366A (en)
DE (1) DE3149240A1 (en)
GB (1) GB2089566B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2837821B2 (en) * 1994-04-15 1998-12-16 インターナショナル・ビジネス・マシーンズ・コーポレイション Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017888A (en) * 1975-12-31 1977-04-12 International Business Machines Corporation Non-volatile metal nitride oxide semiconductor device
US4198252A (en) * 1978-04-06 1980-04-15 Rca Corporation MNOS memory device

Also Published As

Publication number Publication date
DE3149240A1 (en) 1982-08-05
DE3149240C2 (en) 1992-09-24
JPH0219631B2 (en) 1990-05-02
GB2089566A (en) 1982-06-23
JPS57145366A (en) 1982-09-08

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19971210