JPH0219631B2 - - Google Patents

Info

Publication number
JPH0219631B2
JPH0219631B2 JP56199964A JP19996481A JPH0219631B2 JP H0219631 B2 JPH0219631 B2 JP H0219631B2 JP 56199964 A JP56199964 A JP 56199964A JP 19996481 A JP19996481 A JP 19996481A JP H0219631 B2 JPH0219631 B2 JP H0219631B2
Authority
JP
Japan
Prior art keywords
substrate
region
conductivity type
memory gate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56199964A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57145366A (en
Inventor
Rajikanan Kamaru
Esu Marutani Jagaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
General Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Instrument Corp filed Critical General Instrument Corp
Publication of JPS57145366A publication Critical patent/JPS57145366A/ja
Publication of JPH0219631B2 publication Critical patent/JPH0219631B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/69IGFETs having charge trapping gate insulators, e.g. MNOS transistors

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP56199964A 1980-12-11 1981-12-10 Electrically rewritable read only memory Granted JPS57145366A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US21522480A 1980-12-11 1980-12-11

Publications (2)

Publication Number Publication Date
JPS57145366A JPS57145366A (en) 1982-09-08
JPH0219631B2 true JPH0219631B2 (enrdf_load_stackoverflow) 1990-05-02

Family

ID=22802154

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56199964A Granted JPS57145366A (en) 1980-12-11 1981-12-10 Electrically rewritable read only memory

Country Status (3)

Country Link
JP (1) JPS57145366A (enrdf_load_stackoverflow)
DE (1) DE3149240A1 (enrdf_load_stackoverflow)
GB (1) GB2089566B (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2837821B2 (ja) * 1994-04-15 1998-12-16 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体デバイス

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4017888A (en) * 1975-12-31 1977-04-12 International Business Machines Corporation Non-volatile metal nitride oxide semiconductor device
US4198252A (en) * 1978-04-06 1980-04-15 Rca Corporation MNOS memory device

Also Published As

Publication number Publication date
JPS57145366A (en) 1982-09-08
DE3149240A1 (de) 1982-08-05
GB2089566A (en) 1982-06-23
GB2089566B (en) 1985-07-24
DE3149240C2 (enrdf_load_stackoverflow) 1992-09-24

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