DE3134680A1 - "keramisches mikro-einkapselungsgehaeuse fuer elektronische schaltungen" - Google Patents

"keramisches mikro-einkapselungsgehaeuse fuer elektronische schaltungen"

Info

Publication number
DE3134680A1
DE3134680A1 DE19813134680 DE3134680A DE3134680A1 DE 3134680 A1 DE3134680 A1 DE 3134680A1 DE 19813134680 DE19813134680 DE 19813134680 DE 3134680 A DE3134680 A DE 3134680A DE 3134680 A1 DE3134680 A1 DE 3134680A1
Authority
DE
Germany
Prior art keywords
base
micro
capacitor
encapsulation housing
encapsulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19813134680
Other languages
German (de)
English (en)
Inventor
Christian 75014 Paris Val
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of DE3134680A1 publication Critical patent/DE3134680A1/de
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15Ceramic or glass substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/06Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64Impedance arrangements
    • H01L23/642Capacitive arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/4805Shape
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    • H01L2224/48091Arched
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
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    • H01L2924/01039Yttrium [Y]
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    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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    • H01L2924/10Details of semiconductor or other solid state devices to be connected
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
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    • H01L2924/15153Shape the die mounting substrate comprising a recess for hosting the device
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap
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    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16195Flat cap [not enclosing an internal cavity]
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Casings For Electric Apparatus (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
DE19813134680 1980-09-02 1981-09-02 "keramisches mikro-einkapselungsgehaeuse fuer elektronische schaltungen" Ceased DE3134680A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8018927A FR2489592A1 (fr) 1980-09-02 1980-09-02 Micro-boitier ceramique d'encapsulation de circuit electronique

Publications (1)

Publication Number Publication Date
DE3134680A1 true DE3134680A1 (de) 1982-04-08

Family

ID=9245571

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813134680 Ceased DE3134680A1 (de) 1980-09-02 1981-09-02 "keramisches mikro-einkapselungsgehaeuse fuer elektronische schaltungen"

Country Status (2)

Country Link
DE (1) DE3134680A1 (enExample)
FR (1) FR2489592A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3222938A1 (de) * 1981-06-19 1983-01-05 Hitachi, Ltd., Tokyo Vielschicht-keramikplatte
DE4429289A1 (de) * 1994-08-18 1996-02-22 Telefunken Microelectron Integrierte Schaltungsanordnung
EP1968188A1 (de) * 2007-03-09 2008-09-10 HÜTTINGER Elektronik GmbH + Co. KG Klasse-D Verstärkeranordnung

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4451845A (en) * 1981-12-22 1984-05-29 Avx Corporation Lead frame device including ceramic encapsulated capacitor and IC chip
DE3207131A1 (de) * 1982-02-27 1983-09-08 Rosenthal Technik Ag, 8672 Selb Keramiksubstrat als traeger fuer elektronische bauelemente und integrierte elektronische schaltkreise
FR2596607A1 (fr) * 1986-03-28 1987-10-02 Bull Sa Procede de montage d'un circuit integre sur une carte de circuits imprimes, boitier de circuit integre en resultant et ruban porteur de circuits integres pour la mise en oeuvre du procede
FR2681187A1 (fr) * 1991-09-06 1993-03-12 Eurofarad Substrat capacitif pour circuit integre.
FR2940521B1 (fr) 2008-12-19 2011-11-11 3D Plus Procede de fabrication collective de modules electroniques pour montage en surface

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1811857A1 (de) * 1967-12-07 1969-07-17 Vitramon Inc Traeger fuer elektronische Mikrominiaturschaltungen
GB1163434A (en) * 1966-08-11 1969-09-04 Telegraph Condenser Co Ltd Improvements in or relating to Ceramic Electrical Components

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3908185A (en) * 1974-03-06 1975-09-23 Rca Corp High frequency semiconductor device having improved metallized patterns

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1163434A (en) * 1966-08-11 1969-09-04 Telegraph Condenser Co Ltd Improvements in or relating to Ceramic Electrical Components
DE1811857A1 (de) * 1967-12-07 1969-07-17 Vitramon Inc Traeger fuer elektronische Mikrominiaturschaltungen

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3222938A1 (de) * 1981-06-19 1983-01-05 Hitachi, Ltd., Tokyo Vielschicht-keramikplatte
DE4429289A1 (de) * 1994-08-18 1996-02-22 Telefunken Microelectron Integrierte Schaltungsanordnung
EP1968188A1 (de) * 2007-03-09 2008-09-10 HÜTTINGER Elektronik GmbH + Co. KG Klasse-D Verstärkeranordnung
US7705676B2 (en) 2007-03-09 2010-04-27 Huettinger Elektronik Gmbh + Co. Kg Class D amplifier arrangement

Also Published As

Publication number Publication date
FR2489592A1 (fr) 1982-03-05
FR2489592B1 (enExample) 1984-02-17

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8110 Request for examination paragraph 44
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Representative=s name: PRINZ, E., DIPL.-ING. LEISER, G., DIPL.-ING., PAT.

8131 Rejection