DE3127839A1 - Temperaturkompensierte bezugsspannungsquelle - Google Patents
Temperaturkompensierte bezugsspannungsquelleInfo
- Publication number
- DE3127839A1 DE3127839A1 DE19813127839 DE3127839A DE3127839A1 DE 3127839 A1 DE3127839 A1 DE 3127839A1 DE 19813127839 DE19813127839 DE 19813127839 DE 3127839 A DE3127839 A DE 3127839A DE 3127839 A1 DE3127839 A1 DE 3127839A1
- Authority
- DE
- Germany
- Prior art keywords
- voltage
- circuit
- transistor
- reference voltage
- connection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000001419 dependent effect Effects 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 230000001276 controlling effect Effects 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 11
- 230000007704 transition Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- YTCZZXIRLARSET-VJRSQJMHSA-M beraprost sodium Chemical compound [Na+].O([C@H]1C[C@@H](O)[C@@H]([C@@H]21)/C=C/[C@@H](O)C(C)CC#CC)C1=C2C=CC=C1CCCC([O-])=O YTCZZXIRLARSET-VJRSQJMHSA-M 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/18—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S323/00—Electricity: power supply or regulation systems
- Y10S323/907—Temperature compensation of semiconductor
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
- Continuous-Control Power Sources That Use Transistors (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/168,788 US4315209A (en) | 1980-07-14 | 1980-07-14 | Temperature compensated voltage reference circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3127839A1 true DE3127839A1 (de) | 1982-04-22 |
Family
ID=22612934
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19813127839 Withdrawn DE3127839A1 (de) | 1980-07-14 | 1981-07-14 | Temperaturkompensierte bezugsspannungsquelle |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4315209A (enExample) |
| JP (1) | JPH0618013B2 (enExample) |
| DE (1) | DE3127839A1 (enExample) |
| FR (1) | FR2486677A1 (enExample) |
| GB (1) | GB2080581B (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4352056A (en) * | 1980-12-24 | 1982-09-28 | Motorola, Inc. | Solid-state voltage reference providing a regulated voltage having a high magnitude |
| US4398142A (en) * | 1981-10-09 | 1983-08-09 | Harris Corporation | Kelvin-connected buried zener voltage reference circuit |
| US4565935A (en) * | 1982-07-22 | 1986-01-21 | Allied Corporation | Logarithmic converter circuit arrangements |
| JPS6138520A (ja) * | 1984-07-31 | 1986-02-24 | Ricoh Co Ltd | 光センサ安定化方式 |
| US4646114A (en) * | 1984-12-31 | 1987-02-24 | Raytheon Company | Integrated circuit Zener diode |
| US4668903A (en) * | 1985-08-15 | 1987-05-26 | Thaler Corporation | Apparatus and method for a temperature compensated reference voltage supply |
| US4677369A (en) * | 1985-09-19 | 1987-06-30 | Precision Monolithics, Inc. | CMOS temperature insensitive voltage reference |
| US4893032A (en) * | 1987-03-23 | 1990-01-09 | International Business Machines Corp. | Non-saturating temperature independent voltage output driver with adjustable down level |
| US4847547A (en) * | 1988-07-21 | 1989-07-11 | John Fluke Mfg., Co. Inc. | Battery charger with Vbe temperature compensation circuit |
| ATE115786T1 (de) * | 1990-03-27 | 1994-12-15 | Saia Ag | Verfahren zur erzeugung einer stabilen gleichspannung und stabile gleichspannungsquelle. |
| EP0600003B1 (en) * | 1991-08-21 | 2000-03-29 | Analog Devices, Inc. | Method for temperature-compensating zener diodes having either positive or negative temperature coefficients |
| US6667606B2 (en) | 2002-02-15 | 2003-12-23 | Motorola, Inc. | Power regulation and thermal management circuit |
| US7340366B2 (en) * | 2004-03-04 | 2008-03-04 | Atmel Corporation | Method and apparatus of temperature compensation for integrated circuit chip using on-chip sensor and computation means |
| KR100707306B1 (ko) * | 2005-03-03 | 2007-04-12 | 삼성전자주식회사 | 온도에 반비례하는 다양한 온도계수들을 가지는 기준 전압발생기 및 이를 구비하는 디스플레이 장치 |
| US7579813B2 (en) * | 2007-01-29 | 2009-08-25 | Inventec Corporation | Power regulator having a voltage regulator module and having a voltage buffer module to provide a constant voltage output |
| EP3553625A1 (en) | 2018-04-13 | 2019-10-16 | NXP USA, Inc. | Zener diode voltage reference circuit |
| EP3680745B1 (en) * | 2019-01-09 | 2022-12-21 | NXP USA, Inc. | Self-biased temperature-compensated zener reference |
| EP3812873B1 (en) | 2019-10-24 | 2025-02-26 | NXP USA, Inc. | Voltage reference generation with compensation for temperature variation |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3701004A (en) * | 1971-05-13 | 1972-10-24 | Us Army | Circuit for generating a repeatable voltage as a function of temperature |
| JPS568007Y2 (enExample) * | 1975-04-16 | 1981-02-21 | ||
| JPS5913052B2 (ja) * | 1975-07-25 | 1984-03-27 | 日本電気株式会社 | 基準電圧源回路 |
| JPS52114946A (en) * | 1976-03-24 | 1977-09-27 | Hitachi Ltd | Constant-voltage circuit |
| US4030023A (en) * | 1976-05-25 | 1977-06-14 | Rockwell International Corporation | Temperature compensated constant voltage apparatus |
| JPS6048765B2 (ja) * | 1977-12-19 | 1985-10-29 | 日本電気株式会社 | 定電圧半導体集積回路 |
| NL7907161A (nl) * | 1978-09-27 | 1980-03-31 | Analog Devices Inc | Geintegreerde temperatuurgecompenseerde spannings- referentie. |
-
1980
- 1980-07-14 US US06/168,788 patent/US4315209A/en not_active Expired - Lifetime
-
1981
- 1981-06-18 GB GB8118722A patent/GB2080581B/en not_active Expired
- 1981-07-09 FR FR8113514A patent/FR2486677A1/fr active Granted
- 1981-07-14 DE DE19813127839 patent/DE3127839A1/de not_active Withdrawn
- 1981-07-14 JP JP56109926A patent/JPH0618013B2/ja not_active Expired - Lifetime
Non-Patent Citations (1)
| Title |
|---|
| "Circuit Techniques For Achieving High-Speed Resolution A/D Conversion" von Peter Holloway und Michael Timko, 1979, IEEE International Solid State Circuits Conference, Digest of Technical Papers, S. 136-137 * |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2080581B (en) | 1984-02-15 |
| JPS5750030A (en) | 1982-03-24 |
| FR2486677A1 (fr) | 1982-01-15 |
| FR2486677B1 (enExample) | 1985-03-22 |
| US4315209A (en) | 1982-02-09 |
| GB2080581A (en) | 1982-02-03 |
| JPH0618013B2 (ja) | 1994-03-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8139 | Disposal/non-payment of the annual fee |