DE3104024C2 - - Google Patents

Info

Publication number
DE3104024C2
DE3104024C2 DE3104024A DE3104024A DE3104024C2 DE 3104024 C2 DE3104024 C2 DE 3104024C2 DE 3104024 A DE3104024 A DE 3104024A DE 3104024 A DE3104024 A DE 3104024A DE 3104024 C2 DE3104024 C2 DE 3104024C2
Authority
DE
Germany
Prior art keywords
etched
chlorine
etching
silicon
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE3104024A
Other languages
German (de)
English (en)
Other versions
DE3104024A1 (de
Inventor
Dan Short Hills N.J. Us Maydan
David Nin-Kou Warren Township N.J. Us Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Technologies Inc filed Critical AT&T Technologies Inc
Publication of DE3104024A1 publication Critical patent/DE3104024A1/de
Application granted granted Critical
Publication of DE3104024C2 publication Critical patent/DE3104024C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5346—Dry etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
DE19813104024 1980-02-06 1981-02-05 Reaktives zerstaeubungsaetzen von silicium Granted DE3104024A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11910380A 1980-02-06 1980-02-06

Publications (2)

Publication Number Publication Date
DE3104024A1 DE3104024A1 (de) 1981-12-17
DE3104024C2 true DE3104024C2 (enExample) 1988-08-18

Family

ID=22382565

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813104024 Granted DE3104024A1 (de) 1980-02-06 1981-02-05 Reaktives zerstaeubungsaetzen von silicium

Country Status (6)

Country Link
JP (1) JPS56130928A (enExample)
CA (1) CA1148895A (enExample)
DE (1) DE3104024A1 (enExample)
FR (1) FR2478421A1 (enExample)
GB (1) GB2068286B (enExample)
NL (1) NL190592C (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3606959A1 (de) * 1986-03-04 1987-09-10 Leybold Heraeus Gmbh & Co Kg Vorrichtung zur plasmabehandlung von substraten in einer durch hochfrequenz angeregten plasmaentladung
JPH0831439B2 (ja) * 1986-03-05 1996-03-27 株式会社東芝 反応性イオンエッチング方法
DE3935189A1 (de) * 1989-10-23 1991-05-08 Leybold Ag Verfahren und vorrichtung zur behandlung von werkstuecken durch reaktives ionenaetzen
KR930008580B1 (ko) * 1990-06-22 1993-09-09 현대전자산업 주식회사 표면적이 극대화된 실리콘층 및 그 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104086A (en) * 1977-08-15 1978-08-01 International Business Machines Corporation Method for forming isolated regions of silicon utilizing reactive ion etching
US4226665A (en) * 1978-07-31 1980-10-07 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching

Also Published As

Publication number Publication date
FR2478421A1 (fr) 1981-09-18
NL190592C (nl) 1994-05-02
DE3104024A1 (de) 1981-12-17
NL190592B (nl) 1993-12-01
JPS56130928A (en) 1981-10-14
GB2068286B (en) 1984-07-11
FR2478421B1 (enExample) 1983-12-23
CA1148895A (en) 1983-06-28
NL8100560A (nl) 1981-09-01
GB2068286A (en) 1981-08-12

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8127 New person/name/address of the applicant

Owner name: AT & T TECHNOLOGIES, INC., NEW YORK, N.Y., US

8128 New person/name/address of the agent

Representative=s name: BLUMBACH, P., DIPL.-ING., 6200 WIESBADEN WESER, W.

D2 Grant after examination
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: BLUMBACH, KRAMER & PARTNER, 65193 WIESBADEN