JPS56130928A - Method of producing infinitesimal device - Google Patents

Method of producing infinitesimal device

Info

Publication number
JPS56130928A
JPS56130928A JP1587281A JP1587281A JPS56130928A JP S56130928 A JPS56130928 A JP S56130928A JP 1587281 A JP1587281 A JP 1587281A JP 1587281 A JP1587281 A JP 1587281A JP S56130928 A JPS56130928 A JP S56130928A
Authority
JP
Japan
Prior art keywords
infinitesimal
producing
producing infinitesimal
infinitesimal device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1587281A
Other languages
English (en)
Japanese (ja)
Inventor
Meidan Dan
Ninnkou Wan Deibuitsudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS56130928A publication Critical patent/JPS56130928A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5346—Dry etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP1587281A 1980-02-06 1981-02-06 Method of producing infinitesimal device Pending JPS56130928A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11910380A 1980-02-06 1980-02-06

Publications (1)

Publication Number Publication Date
JPS56130928A true JPS56130928A (en) 1981-10-14

Family

ID=22382565

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1587281A Pending JPS56130928A (en) 1980-02-06 1981-02-06 Method of producing infinitesimal device

Country Status (6)

Country Link
JP (1) JPS56130928A (enExample)
CA (1) CA1148895A (enExample)
DE (1) DE3104024A1 (enExample)
FR (1) FR2478421A1 (enExample)
GB (1) GB2068286B (enExample)
NL (1) NL190592C (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62204529A (ja) * 1986-03-05 1987-09-09 Toshiba Corp 反応性イオンエッチング方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3606959A1 (de) * 1986-03-04 1987-09-10 Leybold Heraeus Gmbh & Co Kg Vorrichtung zur plasmabehandlung von substraten in einer durch hochfrequenz angeregten plasmaentladung
DE3935189A1 (de) * 1989-10-23 1991-05-08 Leybold Ag Verfahren und vorrichtung zur behandlung von werkstuecken durch reaktives ionenaetzen
KR930008580B1 (ko) * 1990-06-22 1993-09-09 현대전자산업 주식회사 표면적이 극대화된 실리콘층 및 그 제조방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4104086A (en) * 1977-08-15 1978-08-01 International Business Machines Corporation Method for forming isolated regions of silicon utilizing reactive ion etching
US4226665A (en) * 1978-07-31 1980-10-07 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN=1978 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62204529A (ja) * 1986-03-05 1987-09-09 Toshiba Corp 反応性イオンエッチング方法

Also Published As

Publication number Publication date
FR2478421A1 (fr) 1981-09-18
NL190592C (nl) 1994-05-02
DE3104024A1 (de) 1981-12-17
DE3104024C2 (enExample) 1988-08-18
NL190592B (nl) 1993-12-01
GB2068286B (en) 1984-07-11
FR2478421B1 (enExample) 1983-12-23
CA1148895A (en) 1983-06-28
NL8100560A (nl) 1981-09-01
GB2068286A (en) 1981-08-12

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