FR2478421B1 - - Google Patents
Info
- Publication number
- FR2478421B1 FR2478421B1 FR8102254A FR8102254A FR2478421B1 FR 2478421 B1 FR2478421 B1 FR 2478421B1 FR 8102254 A FR8102254 A FR 8102254A FR 8102254 A FR8102254 A FR 8102254A FR 2478421 B1 FR2478421 B1 FR 2478421B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
- H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
- H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
- H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
- H10P50/268—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas of silicon-containing layers
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
- C04B41/5338—Etching
- C04B41/5346—Dry etching
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
- H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11910380A | 1980-02-06 | 1980-02-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2478421A1 FR2478421A1 (fr) | 1981-09-18 |
| FR2478421B1 true FR2478421B1 (enExample) | 1983-12-23 |
Family
ID=22382565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8102254A Granted FR2478421A1 (fr) | 1980-02-06 | 1981-02-05 | Procede de fabrication de dispositifs microminiatures par attaque reactive du silicium avec bombardement |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS56130928A (enExample) |
| CA (1) | CA1148895A (enExample) |
| DE (1) | DE3104024A1 (enExample) |
| FR (1) | FR2478421A1 (enExample) |
| GB (1) | GB2068286B (enExample) |
| NL (1) | NL190592C (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3606959A1 (de) * | 1986-03-04 | 1987-09-10 | Leybold Heraeus Gmbh & Co Kg | Vorrichtung zur plasmabehandlung von substraten in einer durch hochfrequenz angeregten plasmaentladung |
| JPH0831439B2 (ja) * | 1986-03-05 | 1996-03-27 | 株式会社東芝 | 反応性イオンエッチング方法 |
| DE3935189A1 (de) * | 1989-10-23 | 1991-05-08 | Leybold Ag | Verfahren und vorrichtung zur behandlung von werkstuecken durch reaktives ionenaetzen |
| KR930008580B1 (ko) * | 1990-06-22 | 1993-09-09 | 현대전자산업 주식회사 | 표면적이 극대화된 실리콘층 및 그 제조방법 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4104086A (en) * | 1977-08-15 | 1978-08-01 | International Business Machines Corporation | Method for forming isolated regions of silicon utilizing reactive ion etching |
| US4226665A (en) * | 1978-07-31 | 1980-10-07 | Bell Telephone Laboratories, Incorporated | Device fabrication by plasma etching |
-
1981
- 1981-01-30 CA CA000369719A patent/CA1148895A/en not_active Expired
- 1981-02-03 GB GB8103292A patent/GB2068286B/en not_active Expired
- 1981-02-05 FR FR8102254A patent/FR2478421A1/fr active Granted
- 1981-02-05 DE DE19813104024 patent/DE3104024A1/de active Granted
- 1981-02-05 NL NL8100560A patent/NL190592C/xx not_active IP Right Cessation
- 1981-02-06 JP JP1587281A patent/JPS56130928A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2478421A1 (fr) | 1981-09-18 |
| NL190592C (nl) | 1994-05-02 |
| DE3104024A1 (de) | 1981-12-17 |
| DE3104024C2 (enExample) | 1988-08-18 |
| NL190592B (nl) | 1993-12-01 |
| JPS56130928A (en) | 1981-10-14 |
| GB2068286B (en) | 1984-07-11 |
| CA1148895A (en) | 1983-06-28 |
| NL8100560A (nl) | 1981-09-01 |
| GB2068286A (en) | 1981-08-12 |