DE3070827D1 - Memory device with internal refresh - Google Patents

Memory device with internal refresh

Info

Publication number
DE3070827D1
DE3070827D1 DE8080102315T DE3070827T DE3070827D1 DE 3070827 D1 DE3070827 D1 DE 3070827D1 DE 8080102315 T DE8080102315 T DE 8080102315T DE 3070827 T DE3070827 T DE 3070827T DE 3070827 D1 DE3070827 D1 DE 3070827D1
Authority
DE
Germany
Prior art keywords
memory device
internal refresh
refresh
internal
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080102315T
Other languages
German (de)
English (en)
Inventor
Akira Nagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE3070827D1 publication Critical patent/DE3070827D1/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
DE8080102315T 1979-05-08 1980-04-29 Memory device with internal refresh Expired DE3070827D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5616079A JPS55150192A (en) 1979-05-08 1979-05-08 Memory unit

Publications (1)

Publication Number Publication Date
DE3070827D1 true DE3070827D1 (en) 1985-08-08

Family

ID=13019334

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080102315T Expired DE3070827D1 (en) 1979-05-08 1980-04-29 Memory device with internal refresh

Country Status (4)

Country Link
US (1) US4334295A (enExample)
EP (1) EP0019142B1 (enExample)
JP (1) JPS55150192A (enExample)
DE (1) DE3070827D1 (enExample)

Families Citing this family (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5873096A (ja) * 1981-10-27 1983-05-02 Nec Corp 半導体メモリ
JPS58155596A (ja) * 1982-03-10 1983-09-16 Hitachi Ltd ダイナミツク型ｍｏｓｒａｍ
JPS5952495A (ja) * 1982-09-17 1984-03-27 Hitachi Ltd Ｍｏｓ−ｒａｍ装置
JPS59129987A (ja) * 1983-01-14 1984-07-26 Nec Corp 半導体メモリ
US4587559A (en) * 1983-03-11 1986-05-06 Welch Allyn, Inc. Refreshing of dynamic memory
JPS59167898A (ja) * 1983-03-14 1984-09-21 Nec Corp メモリ回路
US4672583A (en) * 1983-06-15 1987-06-09 Nec Corporation Dynamic random access memory device provided with test circuit for internal refresh circuit
JPS6061992A (ja) * 1983-09-14 1985-04-09 Nec Corp 擬似スタティックメモリ
JPS60211692A (ja) * 1984-04-06 1985-10-24 Hitachi Ltd 半導体記憶装置
US4622668A (en) * 1984-05-09 1986-11-11 International Business Machines Corporation Process and apparatus for testing a microprocessor and dynamic ram
JP2631973B2 (ja) * 1984-07-26 1997-07-16 三菱電機株式会社 ダイナミツクメモリ装置
JPS6166295A (ja) * 1984-09-10 1986-04-05 Nec Corp 半導体メモリ
JPS6212991A (ja) * 1985-07-10 1987-01-21 Fujitsu Ltd 半導体記憶装置
US4691303A (en) * 1985-10-31 1987-09-01 Sperry Corporation Refresh system for multi-bank semiconductor memory
JPS6355797A (ja) * 1986-08-27 1988-03-10 Fujitsu Ltd メモリ
JPS63166093A (ja) * 1986-12-26 1988-07-09 Toshiba Corp 半導体メモリの制御回路
US5313428A (en) * 1987-11-12 1994-05-17 Sharp Kabushiki Kaisha Field memory self-refreshing device utilizing a refresh clock signal selected from two separate clock signals
US5335336A (en) * 1988-03-28 1994-08-02 Hitachi, Ltd. Memory device having refresh mode returning previous page address for resumed page mode
US5724540A (en) * 1988-03-28 1998-03-03 Hitachi, Ltd. Memory system having a column address counter and a page address counter
US5430681A (en) * 1989-05-08 1995-07-04 Hitachi Maxell, Ltd. Memory cartridge and its memory control method
EP0425693B1 (en) * 1989-05-08 1996-09-04 Hitachi Maxell, Ltd. Memory cartridge and memory control method
JP3155545B2 (ja) * 1990-09-07 2001-04-09 シャープ株式会社 メモリのリフレッシュ制御回路
WO1992009084A1 (fr) * 1990-11-16 1992-05-29 Fujitsu Limited Memoire a semiconducteur avec decodeur d'adresse haute vitesse
US5365487A (en) * 1992-03-24 1994-11-15 Texas Instruments Incorporated DRAM power management with self-refresh
KR960009960B1 (ko) * 1994-03-12 1996-07-25 금성일렉트론 주식회사 디램의 리프레쉬 콘트롤회로
JPH0955098A (ja) * 1995-08-15 1997-02-25 Mitsubishi Electric Corp 半導体記憶装置
US6209071B1 (en) 1996-05-07 2001-03-27 Rambus Inc. Asynchronous request/synchronous data dynamic random access memory
US6263448B1 (en) 1997-10-10 2001-07-17 Rambus Inc. Power control system for synchronous memory device
US6092212A (en) * 1997-12-22 2000-07-18 Intel Corporation Method and apparatus for driving a strobe signal
US6334167B1 (en) 1998-08-31 2001-12-25 International Business Machines Corporation System and method for memory self-timed refresh for reduced power consumption
US7099221B2 (en) * 2004-05-06 2006-08-29 Micron Technology, Inc. Memory controller method and system compensating for memory cell data losses
US20060010339A1 (en) * 2004-06-24 2006-01-12 Klein Dean A Memory system and method having selective ECC during low power refresh
US7340668B2 (en) * 2004-06-25 2008-03-04 Micron Technology, Inc. Low power cost-effective ECC memory system and method
US7116602B2 (en) 2004-07-15 2006-10-03 Micron Technology, Inc. Method and system for controlling refresh to avoid memory cell data losses
KR100832020B1 (ko) * 2005-09-29 2008-05-26 주식회사 하이닉스반도체 반도체 메모리 장치의 리셋제어회로
JP4848564B2 (ja) * 2005-09-29 2011-12-28 株式会社ハイニックスセミコンダクター 半導体メモリ装置のリセット制御回路
US20080080284A1 (en) * 2006-09-15 2008-04-03 Peter Mayer Method and apparatus for refreshing memory cells of a memory
US7894289B2 (en) 2006-10-11 2011-02-22 Micron Technology, Inc. Memory system and method using partial ECC to achieve low power refresh and fast access to data
US7900120B2 (en) * 2006-10-18 2011-03-01 Micron Technology, Inc. Memory system and method using ECC with flag bit to identify modified data
CN109499085A (zh) 2014-06-11 2019-03-22 英尼奥斯欧洲股份公司 丙烯腈回收的乙腈移除步骤中的污染减轻

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3737879A (en) * 1972-01-05 1973-06-05 Mos Technology Inc Self-refreshing memory
US3969706A (en) * 1974-10-08 1976-07-13 Mostek Corporation Dynamic random access memory misfet integrated circuit

Also Published As

Publication number Publication date
JPS6336080B2 (enExample) 1988-07-19
US4334295A (en) 1982-06-08
EP0019142A3 (en) 1982-11-10
EP0019142A2 (en) 1980-11-26
JPS55150192A (en) 1980-11-21
EP0019142B1 (en) 1985-07-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition