DE3045194A1 - Verfahren zum herstellen einer photovoltaischen vorrichtung und photovoltaische vorrichtung - Google Patents

Verfahren zum herstellen einer photovoltaischen vorrichtung und photovoltaische vorrichtung

Info

Publication number
DE3045194A1
DE3045194A1 DE19803045194 DE3045194A DE3045194A1 DE 3045194 A1 DE3045194 A1 DE 3045194A1 DE 19803045194 DE19803045194 DE 19803045194 DE 3045194 A DE3045194 A DE 3045194A DE 3045194 A1 DE3045194 A1 DE 3045194A1
Authority
DE
Germany
Prior art keywords
amorphous silicon
partial pressure
photovoltaic device
layer
diode junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19803045194
Other languages
German (de)
English (en)
Inventor
Bruce P. Garwood N.J. Myers
Christopher R. Princeton NJ. Wronski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ExxonMobil Technology and Engineering Co
Original Assignee
Exxon Research and Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research and Engineering Co filed Critical Exxon Research and Engineering Co
Publication of DE3045194A1 publication Critical patent/DE3045194A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/153—Solar cells-implantations-laser beam

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
DE19803045194 1979-12-03 1980-12-01 Verfahren zum herstellen einer photovoltaischen vorrichtung und photovoltaische vorrichtung Withdrawn DE3045194A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/099,421 US4266984A (en) 1979-12-03 1979-12-03 Enhanced open circuit voltage in amorphous silicon photovoltaic devices

Publications (1)

Publication Number Publication Date
DE3045194A1 true DE3045194A1 (de) 1981-09-03

Family

ID=22274927

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803045194 Withdrawn DE3045194A1 (de) 1979-12-03 1980-12-01 Verfahren zum herstellen einer photovoltaischen vorrichtung und photovoltaische vorrichtung

Country Status (8)

Country Link
US (1) US4266984A (OSRAM)
JP (1) JPS5693378A (OSRAM)
AU (1) AU540064B2 (OSRAM)
CA (1) CA1170345A (OSRAM)
DE (1) DE3045194A1 (OSRAM)
FR (1) FR2471671A1 (OSRAM)
GB (1) GB2064867B (OSRAM)
IT (1) IT1134557B (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226897A (en) * 1977-12-05 1980-10-07 Plasma Physics Corporation Method of forming semiconducting materials and barriers
DE3176910D1 (en) * 1980-02-15 1988-11-17 Matsushita Electric Industrial Co Ltd Semiconductor photoelectric device
US4471036A (en) * 1983-06-29 1984-09-11 The United States Of America As Represented By The United States Department Of Energy Electrochemical photovoltaic cells and electrodes
EP0153043A3 (en) * 1984-02-15 1986-09-24 Energy Conversion Devices, Inc. Ohmic contact layer
US5155565A (en) * 1988-02-05 1992-10-13 Minnesota Mining And Manufacturing Company Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate
US20160181456A1 (en) * 2014-12-22 2016-06-23 Yong-Hang Zhang Low-Cost and High-Efficiency Tandem Photovoltaic Cells

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
FR2413780A1 (fr) * 1977-12-29 1979-07-27 Thomson Csf Procede de realisation d'un contact " metal-semi-conducteur " a barriere de potentiel de hauteur predeterminee, et composant semi-conducteur comportant au moins un contact obtenu par ce procede

Also Published As

Publication number Publication date
AU540064B2 (en) 1984-11-01
CA1170345A (en) 1984-07-03
JPS5693378A (en) 1981-07-28
GB2064867A (en) 1981-06-17
US4266984A (en) 1981-05-12
AU6498480A (en) 1981-06-11
FR2471671A1 (fr) 1981-06-19
IT1134557B (it) 1986-08-13
IT8026379A0 (it) 1980-12-02
FR2471671B1 (OSRAM) 1985-04-26
GB2064867B (en) 1983-06-08

Similar Documents

Publication Publication Date Title
DE4132882C2 (de) Verfahren zur Herstellung von pn CdTe/CdS-Dünnschichtsolarzellen
DE69331522T2 (de) Mikrowellengespeistes abscheideverfahren mit regelung der substrattemperatur.
DE2743141C2 (de) Halbleiterbauelement mit einer Schicht aus amorphem Silizium
EP0662247B1 (de) Schnelles verfahren zur erzeugung eines chalkopyrit-halbleiters auf einem substrat
DE60036449T2 (de) Verfahren zur hestellung eines dünnschichtfeldeffekttransistors
DE69125554T2 (de) Verfahren zur Herstellung einer Solarzelle aus amorphem Silizium
DE3541587C2 (de) Verfahren zur Herstellung eines dünnen Halbleiterfilms
DE3322680C2 (OSRAM)
DE2820824C2 (OSRAM)
EP0468094B1 (de) Verfahren zur Herstellung einer Chalkopyrit-Solarzelle
DE3015706A1 (de) Solarzelle mit schottky-sperrschicht
DE3048857A1 (de) Verfahren zum herstellen von amorphem silicium und nach diesem verfahren hergestellte vorrichtung
DE19930133A1 (de) Verfahren zur Erzeugung eines Kohlenstoffilmes auf einem Substrat
DE2711365C2 (OSRAM)
DE2904171C2 (OSRAM)
DE2546697A1 (de) Verfahren zum elektrochemischen abscheiden eines materials auf einem halbleiterkoerper
DE2908146C2 (OSRAM)
DE69431535T2 (de) Verfahren zur Herstellung von einer Chalcopyrit-Halbleiterdünnschichtstruktur mit einem spezifischen Dotiermaterial
DE2911484C2 (de) Metall-Isolator-Halbleiterbauelement
DE3851402T2 (de) Integrierte sonnenzelle und herstellungsverfahren.
DE2300813A1 (de) Verfahren zum niederschlagen von stickstoffdotiertem beta-tantal sowie eine beta-tantal-duennschicht aufweisender artikel
DE3790981B4 (de) Verfahren zum Herstellen einer Photovoltaik-Solarzelle
DE2203080A1 (de) Verfahren zum Herstellen einer Schicht mit bestimmter Dicke auf einer Unterlage
DE2217737B2 (de) Verfahren zum Herstellen eines elektrischen Leitungssystems
DE1544190A1 (de) Verfahren zum Einfuehren zusaetzlicher erlaubter Energieniveaus in das Kristallgitter einer Substanz,insbesondere von Diamanten

Legal Events

Date Code Title Description
8141 Disposal/no request for examination