GB2064867B - Amorphous silicon photovoltaic devices - Google Patents

Amorphous silicon photovoltaic devices

Info

Publication number
GB2064867B
GB2064867B GB8038798A GB8038798A GB2064867B GB 2064867 B GB2064867 B GB 2064867B GB 8038798 A GB8038798 A GB 8038798A GB 8038798 A GB8038798 A GB 8038798A GB 2064867 B GB2064867 B GB 2064867B
Authority
GB
United Kingdom
Prior art keywords
amorphous silicon
photovoltaic devices
silicon photovoltaic
devices
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8038798A
Other languages
English (en)
Other versions
GB2064867A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ExxonMobil Technology and Engineering Co
Original Assignee
Exxon Research and Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research and Engineering Co filed Critical Exxon Research and Engineering Co
Publication of GB2064867A publication Critical patent/GB2064867A/en
Application granted granted Critical
Publication of GB2064867B publication Critical patent/GB2064867B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/153—Solar cells-implantations-laser beam
GB8038798A 1979-12-03 1980-12-03 Amorphous silicon photovoltaic devices Expired GB2064867B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/099,421 US4266984A (en) 1979-12-03 1979-12-03 Enhanced open circuit voltage in amorphous silicon photovoltaic devices

Publications (2)

Publication Number Publication Date
GB2064867A GB2064867A (en) 1981-06-17
GB2064867B true GB2064867B (en) 1983-06-08

Family

ID=22274927

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8038798A Expired GB2064867B (en) 1979-12-03 1980-12-03 Amorphous silicon photovoltaic devices

Country Status (8)

Country Link
US (1) US4266984A (OSRAM)
JP (1) JPS5693378A (OSRAM)
AU (1) AU540064B2 (OSRAM)
CA (1) CA1170345A (OSRAM)
DE (1) DE3045194A1 (OSRAM)
FR (1) FR2471671A1 (OSRAM)
GB (1) GB2064867B (OSRAM)
IT (1) IT1134557B (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226897A (en) * 1977-12-05 1980-10-07 Plasma Physics Corporation Method of forming semiconducting materials and barriers
DE3176910D1 (en) * 1980-02-15 1988-11-17 Matsushita Electric Industrial Co Ltd Semiconductor photoelectric device
US4471036A (en) * 1983-06-29 1984-09-11 The United States Of America As Represented By The United States Department Of Energy Electrochemical photovoltaic cells and electrodes
EP0153043A3 (en) * 1984-02-15 1986-09-24 Energy Conversion Devices, Inc. Ohmic contact layer
US5155565A (en) * 1988-02-05 1992-10-13 Minnesota Mining And Manufacturing Company Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate
US20160181456A1 (en) * 2014-12-22 2016-06-23 Yong-Hang Zhang Low-Cost and High-Efficiency Tandem Photovoltaic Cells

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
FR2413780A1 (fr) * 1977-12-29 1979-07-27 Thomson Csf Procede de realisation d'un contact " metal-semi-conducteur " a barriere de potentiel de hauteur predeterminee, et composant semi-conducteur comportant au moins un contact obtenu par ce procede

Also Published As

Publication number Publication date
AU540064B2 (en) 1984-11-01
CA1170345A (en) 1984-07-03
JPS5693378A (en) 1981-07-28
GB2064867A (en) 1981-06-17
US4266984A (en) 1981-05-12
AU6498480A (en) 1981-06-11
FR2471671A1 (fr) 1981-06-19
DE3045194A1 (de) 1981-09-03
IT1134557B (it) 1986-08-13
IT8026379A0 (it) 1980-12-02
FR2471671B1 (OSRAM) 1985-04-26

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee