FR2471671B1 - - Google Patents
Info
- Publication number
- FR2471671B1 FR2471671B1 FR8025651A FR8025651A FR2471671B1 FR 2471671 B1 FR2471671 B1 FR 2471671B1 FR 8025651 A FR8025651 A FR 8025651A FR 8025651 A FR8025651 A FR 8025651A FR 2471671 B1 FR2471671 B1 FR 2471671B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/18—Photovoltaic cells having only Schottky potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/153—Solar cells-implantations-laser beam
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/099,421 US4266984A (en) | 1979-12-03 | 1979-12-03 | Enhanced open circuit voltage in amorphous silicon photovoltaic devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2471671A1 FR2471671A1 (fr) | 1981-06-19 |
| FR2471671B1 true FR2471671B1 (OSRAM) | 1985-04-26 |
Family
ID=22274927
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8025651A Granted FR2471671A1 (fr) | 1979-12-03 | 1980-12-03 | Dispositif photovoltaique au silicium amorphe produisant une tension elevee en circuit ouvert |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4266984A (OSRAM) |
| JP (1) | JPS5693378A (OSRAM) |
| AU (1) | AU540064B2 (OSRAM) |
| CA (1) | CA1170345A (OSRAM) |
| DE (1) | DE3045194A1 (OSRAM) |
| FR (1) | FR2471671A1 (OSRAM) |
| GB (1) | GB2064867B (OSRAM) |
| IT (1) | IT1134557B (OSRAM) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4226897A (en) * | 1977-12-05 | 1980-10-07 | Plasma Physics Corporation | Method of forming semiconducting materials and barriers |
| DE3176910D1 (en) * | 1980-02-15 | 1988-11-17 | Matsushita Electric Industrial Co Ltd | Semiconductor photoelectric device |
| US4471036A (en) * | 1983-06-29 | 1984-09-11 | The United States Of America As Represented By The United States Department Of Energy | Electrochemical photovoltaic cells and electrodes |
| EP0153043A3 (en) * | 1984-02-15 | 1986-09-24 | Energy Conversion Devices, Inc. | Ohmic contact layer |
| US5155565A (en) * | 1988-02-05 | 1992-10-13 | Minnesota Mining And Manufacturing Company | Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate |
| US20160181456A1 (en) * | 2014-12-22 | 2016-06-23 | Yong-Hang Zhang | Low-Cost and High-Efficiency Tandem Photovoltaic Cells |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4064521A (en) * | 1975-07-28 | 1977-12-20 | Rca Corporation | Semiconductor device having a body of amorphous silicon |
| FR2413780A1 (fr) * | 1977-12-29 | 1979-07-27 | Thomson Csf | Procede de realisation d'un contact " metal-semi-conducteur " a barriere de potentiel de hauteur predeterminee, et composant semi-conducteur comportant au moins un contact obtenu par ce procede |
-
1979
- 1979-12-03 US US06/099,421 patent/US4266984A/en not_active Expired - Lifetime
-
1980
- 1980-10-02 CA CA000361399A patent/CA1170345A/en not_active Expired
- 1980-12-01 DE DE19803045194 patent/DE3045194A1/de not_active Withdrawn
- 1980-12-02 AU AU64984/80A patent/AU540064B2/en not_active Ceased
- 1980-12-02 IT IT8026379A patent/IT1134557B/it active
- 1980-12-03 JP JP16972580A patent/JPS5693378A/ja active Pending
- 1980-12-03 GB GB8038798A patent/GB2064867B/en not_active Expired
- 1980-12-03 FR FR8025651A patent/FR2471671A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| AU540064B2 (en) | 1984-11-01 |
| CA1170345A (en) | 1984-07-03 |
| JPS5693378A (en) | 1981-07-28 |
| GB2064867A (en) | 1981-06-17 |
| US4266984A (en) | 1981-05-12 |
| AU6498480A (en) | 1981-06-11 |
| FR2471671A1 (fr) | 1981-06-19 |
| DE3045194A1 (de) | 1981-09-03 |
| IT1134557B (it) | 1986-08-13 |
| IT8026379A0 (it) | 1980-12-02 |
| GB2064867B (en) | 1983-06-08 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |