FR2471671A1 - Dispositif photovoltaique au silicium amorphe produisant une tension elevee en circuit ouvert - Google Patents

Dispositif photovoltaique au silicium amorphe produisant une tension elevee en circuit ouvert Download PDF

Info

Publication number
FR2471671A1
FR2471671A1 FR8025651A FR8025651A FR2471671A1 FR 2471671 A1 FR2471671 A1 FR 2471671A1 FR 8025651 A FR8025651 A FR 8025651A FR 8025651 A FR8025651 A FR 8025651A FR 2471671 A1 FR2471671 A1 FR 2471671A1
Authority
FR
France
Prior art keywords
amorphous silicon
photovoltaic device
layer
junction
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8025651A
Other languages
English (en)
French (fr)
Other versions
FR2471671B1 (OSRAM
Inventor
Bruce P Myers
Christopher R Wronski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ExxonMobil Technology and Engineering Co
Original Assignee
Exxon Research and Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research and Engineering Co filed Critical Exxon Research and Engineering Co
Publication of FR2471671A1 publication Critical patent/FR2471671A1/fr
Application granted granted Critical
Publication of FR2471671B1 publication Critical patent/FR2471671B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/153—Solar cells-implantations-laser beam

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
FR8025651A 1979-12-03 1980-12-03 Dispositif photovoltaique au silicium amorphe produisant une tension elevee en circuit ouvert Granted FR2471671A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/099,421 US4266984A (en) 1979-12-03 1979-12-03 Enhanced open circuit voltage in amorphous silicon photovoltaic devices

Publications (2)

Publication Number Publication Date
FR2471671A1 true FR2471671A1 (fr) 1981-06-19
FR2471671B1 FR2471671B1 (OSRAM) 1985-04-26

Family

ID=22274927

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8025651A Granted FR2471671A1 (fr) 1979-12-03 1980-12-03 Dispositif photovoltaique au silicium amorphe produisant une tension elevee en circuit ouvert

Country Status (8)

Country Link
US (1) US4266984A (OSRAM)
JP (1) JPS5693378A (OSRAM)
AU (1) AU540064B2 (OSRAM)
CA (1) CA1170345A (OSRAM)
DE (1) DE3045194A1 (OSRAM)
FR (1) FR2471671A1 (OSRAM)
GB (1) GB2064867B (OSRAM)
IT (1) IT1134557B (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226897A (en) * 1977-12-05 1980-10-07 Plasma Physics Corporation Method of forming semiconducting materials and barriers
DE3176910D1 (en) * 1980-02-15 1988-11-17 Matsushita Electric Industrial Co Ltd Semiconductor photoelectric device
US4471036A (en) * 1983-06-29 1984-09-11 The United States Of America As Represented By The United States Department Of Energy Electrochemical photovoltaic cells and electrodes
EP0153043A3 (en) * 1984-02-15 1986-09-24 Energy Conversion Devices, Inc. Ohmic contact layer
US5155565A (en) * 1988-02-05 1992-10-13 Minnesota Mining And Manufacturing Company Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate
US20160181456A1 (en) * 2014-12-22 2016-06-23 Yong-Hang Zhang Low-Cost and High-Efficiency Tandem Photovoltaic Cells

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
GB2011715A (en) * 1977-12-29 1979-07-11 Thomson Csf Process for producing a metal semiconductor contact having a potential barrier of predetermined height

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
GB2011715A (en) * 1977-12-29 1979-07-11 Thomson Csf Process for producing a metal semiconductor contact having a potential barrier of predetermined height

Also Published As

Publication number Publication date
AU540064B2 (en) 1984-11-01
CA1170345A (en) 1984-07-03
JPS5693378A (en) 1981-07-28
GB2064867A (en) 1981-06-17
US4266984A (en) 1981-05-12
AU6498480A (en) 1981-06-11
DE3045194A1 (de) 1981-09-03
IT1134557B (it) 1986-08-13
IT8026379A0 (it) 1980-12-02
FR2471671B1 (OSRAM) 1985-04-26
GB2064867B (en) 1983-06-08

Similar Documents

Publication Publication Date Title
FR2472835A1 (fr) Procede pour produire un gradient de dopage dans du silicium amorphe et pour former un contact ohmique sur du silicium amorphe photoconducteur intrinseque
FR2482786A1 (fr) Procede de fabrication de films de silicium a dopage de type p et dispositif realise a partir de ces films
EP2255029B1 (fr) Procede de production de nanostructures sur un substrat d'oxyde metallique et dispositif forme de couches minces
FR2743193A1 (fr) Procede et dispositif de depot d'au moins une couche de silicium hydrogene microcristallin ou nanocristallin intrinseque, et cellule photovoltaique et transistor a couches minces obtenus par la mise en oeuvre de ce procede
FR2550007A1 (en) Method for producing a semiconducting film and photovoltaic device obtained by the method
EP0673549A1 (fr) Cellule photovoltaique et procede de fabrication d'une telle cellule
FR2505881A1 (fr) Procede et dispositif pour doper un materiau semi-conducteur
FR2503457A1 (fr) Systeme de cellules solaires connectees en serie sur un substrat unique
WO2011092401A2 (fr) Procede de realisation d'une cellule photovoltaique avec preparation de surface d'un substrat en silicium cristallin
FR2490018A1 (fr) Procede et dispositif pour etalonner les intervalles de bande d'alliages semi-conducteurs amorphes et alliages obtenus
EP2471111A1 (fr) Procede de nettoyage de la surface d'un substrat de silicium
CH668145A5 (fr) Procede et installation de depot de silicium amorphe hydrogene sur un substrat dans une enceinte a plasma.
FR3004853A1 (fr) Procede de fabrication d'une diode schottky sur un substrat en diamant
FR2500216A1 (fr) Procede de fabrication de cellules solaires au silicium amorphe
WO2003021690A2 (fr) Procede de depot d'une couche d'oxyde sur un substrat et cellule photovoltaique utilisant ce substrat
FR2490013A1 (fr) Dispositif amorphe photosensible a cellules multiples
FR2542500A1 (fr) Procede de fabrication d'un dispositif semiconducteur du type comprenant au moins une couche de silicium deposee sur un substrat isolant
FR2490019A1 (fr) Procede et dispositif pour augmenter l'intervalle de bandes d'alliages amorphes photosensibles et alliages obtenus
FR2471671A1 (fr) Dispositif photovoltaique au silicium amorphe produisant une tension elevee en circuit ouvert
FR2464564A1 (fr) Batterie solaire au silicium amorphe
FR2889745A1 (fr) Revetement anti-reflet, en particulier pour cellules solaires, et procede de fabrication de ce revetement
WO2004053960A1 (fr) Procede d'elaboration de diamant de type n a haute conductivite electrique
FR2604561A1 (fr) Dispositif photovoltaique
FR2485810A1 (fr) Procede de realisation d'une couche contenant du silicium et dispositif de conversion photo-electrique mettant en oeuvre ce procede
JPH08506215A (ja) 高品質半導体材料製造のためのマイクロ波励起方法

Legal Events

Date Code Title Description
ST Notification of lapse