IT1134557B - Dispositivo fotovoltaico,di silicio amorfo,in grado di fornire una maggior tensione a circuito apreto - Google Patents

Dispositivo fotovoltaico,di silicio amorfo,in grado di fornire una maggior tensione a circuito apreto

Info

Publication number
IT1134557B
IT1134557B IT8026379A IT2637980A IT1134557B IT 1134557 B IT1134557 B IT 1134557B IT 8026379 A IT8026379 A IT 8026379A IT 2637980 A IT2637980 A IT 2637980A IT 1134557 B IT1134557 B IT 1134557B
Authority
IT
Italy
Prior art keywords
apreto
circuit
amorphous silicon
photovoltaic device
higher voltage
Prior art date
Application number
IT8026379A
Other languages
English (en)
Italian (it)
Other versions
IT8026379A0 (it
Inventor
Christopher R Wronski
Brece P Myers
Original Assignee
Exxon Research Engineering Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exxon Research Engineering Co filed Critical Exxon Research Engineering Co
Publication of IT8026379A0 publication Critical patent/IT8026379A0/it
Application granted granted Critical
Publication of IT1134557B publication Critical patent/IT1134557B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18—Photovoltaic cells having only Schottky potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/153—Solar cells-implantations-laser beam
IT8026379A 1979-12-03 1980-12-02 Dispositivo fotovoltaico,di silicio amorfo,in grado di fornire una maggior tensione a circuito apreto IT1134557B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/099,421 US4266984A (en) 1979-12-03 1979-12-03 Enhanced open circuit voltage in amorphous silicon photovoltaic devices

Publications (2)

Publication Number Publication Date
IT8026379A0 IT8026379A0 (it) 1980-12-02
IT1134557B true IT1134557B (it) 1986-08-13

Family

ID=22274927

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8026379A IT1134557B (it) 1979-12-03 1980-12-02 Dispositivo fotovoltaico,di silicio amorfo,in grado di fornire una maggior tensione a circuito apreto

Country Status (8)

Country Link
US (1) US4266984A (OSRAM)
JP (1) JPS5693378A (OSRAM)
AU (1) AU540064B2 (OSRAM)
CA (1) CA1170345A (OSRAM)
DE (1) DE3045194A1 (OSRAM)
FR (1) FR2471671A1 (OSRAM)
GB (1) GB2064867B (OSRAM)
IT (1) IT1134557B (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226897A (en) * 1977-12-05 1980-10-07 Plasma Physics Corporation Method of forming semiconducting materials and barriers
DE3176910D1 (en) * 1980-02-15 1988-11-17 Matsushita Electric Industrial Co Ltd Semiconductor photoelectric device
US4471036A (en) * 1983-06-29 1984-09-11 The United States Of America As Represented By The United States Department Of Energy Electrochemical photovoltaic cells and electrodes
EP0153043A3 (en) * 1984-02-15 1986-09-24 Energy Conversion Devices, Inc. Ohmic contact layer
US5155565A (en) * 1988-02-05 1992-10-13 Minnesota Mining And Manufacturing Company Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate
US20160181456A1 (en) * 2014-12-22 2016-06-23 Yong-Hang Zhang Low-Cost and High-Efficiency Tandem Photovoltaic Cells

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
FR2413780A1 (fr) * 1977-12-29 1979-07-27 Thomson Csf Procede de realisation d'un contact " metal-semi-conducteur " a barriere de potentiel de hauteur predeterminee, et composant semi-conducteur comportant au moins un contact obtenu par ce procede

Also Published As

Publication number Publication date
AU540064B2 (en) 1984-11-01
CA1170345A (en) 1984-07-03
JPS5693378A (en) 1981-07-28
GB2064867A (en) 1981-06-17
US4266984A (en) 1981-05-12
AU6498480A (en) 1981-06-11
FR2471671A1 (fr) 1981-06-19
DE3045194A1 (de) 1981-09-03
IT8026379A0 (it) 1980-12-02
FR2471671B1 (OSRAM) 1985-04-26
GB2064867B (en) 1983-06-08

Similar Documents

Publication Publication Date Title
SE7710466L (sv) Solfangare med solfoljaranordning
JPS54141593A (en) Amorphous silicon solar battery
IT8068773A0 (it) Dispositivo raddrizzatore con tensione filtrata d uscita
MX146562A (es) Mejoras en circuito filtrador con una funcion bicuadrada de transferencia
ZA79880B (en) Amorphous semiconductors equivalent to crystalline semiconductors
IT1020199B (it) Circuito in grado di fornire una tensione di riferimento dipenden te dalla temperatura
MX150760A (es) Dispositivo fotovoltaico mejorado
IT1098721B (it) Dispositivo per utilizzare l'energia solare a scopo di illuminazione di ambienti non accessibili alla luce del sole
JPS5353963A (en) High power semiconductor device
AT364975B (de) Solar-flachkollektor
IL53106A (en) Solar energy device
JPS5633889A (en) Amorphous silicon solar battery
GB1548796A (en) High voltage semiconductor device
SE7812078L (sv) Halvledaranordning med permanentminne och sett att framstella en dylik halvledaranordning
IT1134557B (it) Dispositivo fotovoltaico,di silicio amorfo,in grado di fornire una maggior tensione a circuito apreto
IT1148758B (it) Circuit di sottrazione di cariche usante dispositivi a trasferimento di cariche
SE7810464L (sv) Kopplingsanordning innefattande en hogspenningseffekttransistor
IT1114184B (it) Circuito fet utilizzante la tensione di substrato per disattivare dispositivi operanti nel regime a svuotamento
IT7820753A0 (it) Dispositivo fotovoltaico presentante una elevata efficienza di assorbimento.
JPS55141765A (en) Amorphous silicon solar battery
IT1158661B (it) Dispositivo fotovoltaico
JPS5370772A (en) Semiconductor split electrode charge transfer device
IT1128864B (it) Circuito a semiconduttore per la conversione di tensione elettrica
IT1125849B (it) Dispositivo per introdurre ed estrarre il portaobiettivo di una macchina fotografica
JPS53123092A (en) High detecting small capacitance photovoltaic semiconductor device