DE3028614A1 - Field effect transconductance amplifiers - Google Patents
Field effect transconductance amplifiersInfo
- Publication number
- DE3028614A1 DE3028614A1 DE803028614A DE3028614A DE3028614A1 DE 3028614 A1 DE3028614 A1 DE 3028614A1 DE 803028614 A DE803028614 A DE 803028614A DE 3028614 A DE3028614 A DE 3028614A DE 3028614 A1 DE3028614 A1 DE 3028614A1
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect element
- drain
- source
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 230000005669 field effect Effects 0.000 title claims description 126
- 230000005540 biological transmission Effects 0.000 claims description 30
- 239000003990 capacitor Substances 0.000 claims description 23
- 230000002829 reductive effect Effects 0.000 claims description 15
- 230000036961 partial effect Effects 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 230000001419 dependent effect Effects 0.000 claims description 7
- 101150103171 DARS1 gene Proteins 0.000 claims 1
- 230000001629 suppression Effects 0.000 description 21
- 230000000694 effects Effects 0.000 description 20
- 230000003321 amplification Effects 0.000 description 18
- 238000003199 nucleic acid amplification method Methods 0.000 description 18
- 238000000034 method Methods 0.000 description 13
- 230000006870 function Effects 0.000 description 12
- 230000005684 electric field Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 8
- 239000008186 active pharmaceutical agent Substances 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 230000001427 coherent effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000009467 reduction Effects 0.000 description 4
- 230000002123 temporal effect Effects 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 230000006978 adaptation Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000036316 preload Effects 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- 101000802471 Sylvirana guentheri Brevinin-2GHb Proteins 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006735 deficit Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
- H03F3/165—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices with junction-FET's
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/004,572 US4241316A (en) | 1979-01-18 | 1979-01-18 | Field effect transconductance amplifiers |
| PCT/US1980/000043 WO1980001527A1 (en) | 1979-01-18 | 1980-01-16 | Field effect transconductance amplifiers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3028614A1 true DE3028614A1 (en) | 1981-02-26 |
Family
ID=21711439
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE803028614A Ceased DE3028614A1 (en) | 1979-01-18 | 1980-01-16 | Field effect transconductance amplifiers |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US4241316A (OSRAM) |
| JP (1) | JPS56500057A (OSRAM) |
| DE (1) | DE3028614A1 (OSRAM) |
| FR (1) | FR2447115B1 (OSRAM) |
| GB (1) | GB2059211B (OSRAM) |
| WO (1) | WO1980001527A1 (OSRAM) |
Families Citing this family (57)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3036885A1 (de) * | 1980-09-30 | 1982-05-13 | Siemens AG, 1000 Berlin und 8000 München | Transistor-schaltung |
| US4465980A (en) * | 1982-09-23 | 1984-08-14 | Rca Corporation | Predistortion circuit for a power amplifier |
| FR2558659B1 (fr) * | 1984-01-20 | 1986-04-25 | Thomson Csf | Circuit de polarisation d'un transistor a effet de champ |
| US4596959A (en) * | 1984-11-23 | 1986-06-24 | Microwave Technology, Inc. | Series biasing scheme for field effect transistors |
| US4677391A (en) * | 1984-11-23 | 1987-06-30 | Microwave Technology, Inc. | Series biasing scheme for field effect transistors |
| US4631493A (en) * | 1985-03-18 | 1986-12-23 | Eaton Corporation | Circuit for DC biasing |
| US4875023A (en) * | 1988-05-10 | 1989-10-17 | Grumman Aerospace Corporation | Variable attenuator having voltage variable FET resistor with chosen resistance-voltage relationship |
| US4864162A (en) * | 1988-05-10 | 1989-09-05 | Grumman Aerospace Corporation | Voltage variable FET resistor with chosen resistance-voltage relationship |
| US4918338A (en) * | 1988-10-04 | 1990-04-17 | North American Philips Corporation | Drain-biassed transresistance device for continuous time filters |
| JP2960095B2 (ja) * | 1990-02-27 | 1999-10-06 | 日本ヒューレット・パッカード株式会社 | 回路素子測定装置 |
| US5065043A (en) * | 1990-03-09 | 1991-11-12 | Texas Instruments Incorporated | Biasing circuits for field effect transistors using GaAs FETS |
| US6057972A (en) * | 1995-11-03 | 2000-05-02 | International Business Machines Corporation | Current source for a magnetoresistive head with variability and selectable slew rate |
| US6300835B1 (en) * | 1999-12-10 | 2001-10-09 | Motorola, Inc. | Power amplifier core |
| DE10001124C1 (de) * | 2000-01-13 | 2001-06-07 | Infineon Technologies Ag | Schaltungsanordnung und ein Verfahren zur Reduktion des 1/f-Rauschens von MOSFETs |
| US6804502B2 (en) | 2001-10-10 | 2004-10-12 | Peregrine Semiconductor Corporation | Switch circuit and method of switching radio frequency signals |
| US6642578B1 (en) * | 2002-07-22 | 2003-11-04 | Anadigics, Inc. | Linearity radio frequency switch with low control voltage |
| EP1424771A1 (en) * | 2002-11-28 | 2004-06-02 | STMicroelectronics S.r.l. | Cascode power amplifier particularly for use in radiofrequency applications |
| JP2004205301A (ja) * | 2002-12-25 | 2004-07-22 | Nec Corp | 評価装置及びそれに用いる回路設計方法 |
| US7248120B2 (en) * | 2004-06-23 | 2007-07-24 | Peregrine Semiconductor Corporation | Stacked transistor method and apparatus |
| WO2006002347A1 (en) | 2004-06-23 | 2006-01-05 | Peregrine Semiconductor Corporation | Integrated rf front end |
| US9653601B2 (en) | 2005-07-11 | 2017-05-16 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink-harmonic wrinkle reduction |
| USRE48965E1 (en) | 2005-07-11 | 2022-03-08 | Psemi Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US20080076371A1 (en) | 2005-07-11 | 2008-03-27 | Alexander Dribinsky | Circuit and method for controlling charge injection in radio frequency switches |
| US7890891B2 (en) | 2005-07-11 | 2011-02-15 | Peregrine Semiconductor Corporation | Method and apparatus improving gate oxide reliability by controlling accumulated charge |
| US7910993B2 (en) | 2005-07-11 | 2011-03-22 | Peregrine Semiconductor Corporation | Method and apparatus for use in improving linearity of MOSFET's using an accumulated charge sink |
| US7508249B2 (en) * | 2005-07-27 | 2009-03-24 | Analog Devices, Inc. | Distributed transistor structure for high linearity active CATV power splitter |
| DE102006028093B4 (de) * | 2006-06-19 | 2014-07-03 | Austriamicrosystems Ag | Verstärkeranordnung und Verfahren zum Verstärken eines Signals |
| US7960772B2 (en) | 2007-04-26 | 2011-06-14 | Peregrine Semiconductor Corporation | Tuning capacitance to enhance FET stack voltage withstand |
| EP2568608B1 (en) | 2008-02-28 | 2014-05-14 | Peregrine Semiconductor Corporation | Method and Apparatus for use in Digitally Tuning a Capacitor in an Integrated Circuit Device |
| US8007727B2 (en) | 2008-05-30 | 2011-08-30 | Intel Corporation | Virtual semiconductor nanowire, and methods of using same |
| AU2009291495A1 (en) * | 2008-09-11 | 2010-03-18 | Savage, Paul | Low distortion cascode amplifier circuit |
| US7911280B2 (en) * | 2009-07-13 | 2011-03-22 | Sony Ericsson Mobile Communications Ab | Amplifier stage |
| FR2950208B1 (fr) * | 2009-09-17 | 2011-10-14 | St Microelectronics Grenoble 2 | Etage de sortie d'un amplificateur classe a |
| US8786368B2 (en) | 2011-03-09 | 2014-07-22 | Hittite Microwave Corporation | Distributed amplifier with improved stabilization |
| DE102011083912B4 (de) * | 2011-09-30 | 2017-10-19 | Intel Deutschland Gmbh | Schaltung und leistungsverstärker |
| US9088248B2 (en) | 2012-05-16 | 2015-07-21 | Intel Mobile Communications GmbH | Amplifier and mobile communication device |
| JP6136165B2 (ja) * | 2012-09-28 | 2017-05-31 | 住友電気工業株式会社 | 電子回路 |
| US20150236798A1 (en) | 2013-03-14 | 2015-08-20 | Peregrine Semiconductor Corporation | Methods for Increasing RF Throughput Via Usage of Tunable Filters |
| CN104518740A (zh) * | 2013-09-29 | 2015-04-15 | Lsi公司 | 电压跟随器放大器 |
| EP2878927B1 (en) * | 2013-11-29 | 2016-10-26 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Sensor circuit for measuring a physical quantity |
| US10530190B2 (en) | 2014-10-31 | 2020-01-07 | Teslonix Inc. | Wireless energy transfer in a multipath environment |
| WO2016067100A1 (en) * | 2014-10-31 | 2016-05-06 | Teslonix Inc. | Wireless energy transfer using alignment of electromagnetic waves |
| US10256678B2 (en) | 2014-10-31 | 2019-04-09 | Teslonix Inc. | Wireless energy transfer using alignment of electromagnetic waves |
| US10474852B2 (en) | 2014-10-31 | 2019-11-12 | Teslonix Inc. | Charging long-range radio frequency identification tags |
| US9985588B2 (en) * | 2015-11-10 | 2018-05-29 | Skyworks Solutions, Inc. | Distortion correction in cascode power amplifiers |
| US11201595B2 (en) | 2015-11-24 | 2021-12-14 | Skyworks Solutions, Inc. | Cascode power amplifier with switchable output matching network |
| CN109565262B (zh) * | 2016-07-28 | 2020-09-04 | 华为技术有限公司 | 用于mmic hemt放大器的补偿器器件 |
| US10250199B2 (en) | 2016-09-16 | 2019-04-02 | Psemi Corporation | Cascode amplifier bias circuits |
| EP3545619A4 (en) * | 2016-11-23 | 2020-06-24 | Circuit Seed, LLC | LOW NOISE SENSOR AMPLIFIERS AND TRANS-IMPEDANCE AMPLIFIERS USING A COMPLEMENTARY PAIR OF CURRENT-INJECTION FIELD-EFFECT TRANSISTOR DEVICES |
| US9960737B1 (en) | 2017-03-06 | 2018-05-01 | Psemi Corporation | Stacked PA power control |
| US10461705B2 (en) | 2017-03-27 | 2019-10-29 | Skyworks Solutions, Inc. | Apparatus and methods for oscillation suppression of cascode power amplifiers |
| US9948252B1 (en) | 2017-04-06 | 2018-04-17 | Psemi Corporation | Device stack with novel gate capacitor topology |
| US10796112B2 (en) | 2018-05-28 | 2020-10-06 | Teslonix Inc. | Protocol layer coordination of wireless energy transfer systems |
| US10862429B2 (en) | 2019-01-09 | 2020-12-08 | Silanna Asia Pte Ltd | Apparatus for optimized turn-off of a cascode amplifier |
| JP2021082960A (ja) * | 2019-11-20 | 2021-05-27 | 株式会社村田製作所 | 電力増幅回路 |
| US12470177B2 (en) * | 2022-05-27 | 2025-11-11 | Psemi Corporation | Feedback topologies for amplifier gain reduction |
| CN115378372B (zh) * | 2022-10-24 | 2023-04-07 | 成都嘉纳海威科技有限责任公司 | 一种低功耗线性化放大器 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3286189A (en) * | 1964-01-20 | 1966-11-15 | Ithaco | High gain field-effect transistor-loaded amplifier |
| US3449683A (en) * | 1967-04-26 | 1969-06-10 | Us Navy | Operational thin film amplifier |
| US3462701A (en) * | 1967-01-26 | 1969-08-19 | Honeywell Inc | Biasing circuit for use with field-effect transistors |
| US3723892A (en) * | 1972-03-22 | 1973-03-27 | Julie Res Labor Inc | Circuit using dynamic high impedance load |
| DE2921037A1 (de) * | 1978-05-24 | 1979-11-29 | Hitachi Ltd | Hochspannungsschaltung fuer isolierschicht-feldeffekttransistoren |
| FR2427734A1 (fr) * | 1978-05-30 | 1979-12-28 | Siemens Ag | Montage pour stabiliser le point de fonctionnement d'un transistor a effet de champ amplificateur |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS436496Y1 (OSRAM) * | 1965-10-27 | 1968-03-23 | ||
| US3517325A (en) * | 1967-03-09 | 1970-06-23 | Instrumentation Labor Inc | Compensated dc amplifier input stage employing junction field effect transistors |
| US3449686A (en) * | 1967-05-29 | 1969-06-10 | Us Navy | Variable gain amplifier |
-
1979
- 1979-01-18 US US06/004,572 patent/US4241316A/en not_active Expired - Lifetime
-
1980
- 1980-01-16 DE DE803028614A patent/DE3028614A1/de not_active Ceased
- 1980-01-16 JP JP50047680A patent/JPS56500057A/ja active Pending
- 1980-01-16 GB GB8029138A patent/GB2059211B/en not_active Expired
- 1980-01-16 WO PCT/US1980/000043 patent/WO1980001527A1/en not_active Ceased
- 1980-01-17 FR FR8001022A patent/FR2447115B1/fr not_active Expired
-
1983
- 1983-02-28 US US06/470,522 patent/US4496909A/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3286189A (en) * | 1964-01-20 | 1966-11-15 | Ithaco | High gain field-effect transistor-loaded amplifier |
| US3462701A (en) * | 1967-01-26 | 1969-08-19 | Honeywell Inc | Biasing circuit for use with field-effect transistors |
| US3449683A (en) * | 1967-04-26 | 1969-06-10 | Us Navy | Operational thin film amplifier |
| US3723892A (en) * | 1972-03-22 | 1973-03-27 | Julie Res Labor Inc | Circuit using dynamic high impedance load |
| DE2921037A1 (de) * | 1978-05-24 | 1979-11-29 | Hitachi Ltd | Hochspannungsschaltung fuer isolierschicht-feldeffekttransistoren |
| FR2427734A1 (fr) * | 1978-05-30 | 1979-12-28 | Siemens Ag | Montage pour stabiliser le point de fonctionnement d'un transistor a effet de champ amplificateur |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2059211B (en) | 1983-04-20 |
| JPS56500057A (OSRAM) | 1981-01-16 |
| WO1980001527A1 (en) | 1980-07-24 |
| FR2447115B1 (fr) | 1986-11-28 |
| GB2059211A (en) | 1981-04-15 |
| FR2447115A1 (fr) | 1980-08-14 |
| US4496909A (en) | 1985-01-29 |
| US4241316A (en) | 1980-12-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8128 | New person/name/address of the agent |
Representative=s name: RUSCHKE, O., DIPL.-ING., 1000 BERLIN RUSCHKE, H., |
|
| 8131 | Rejection |